公开(公告)号：US20220189905A1

公开(公告)日：2022-06-16

申请号：US17350473

申请日：2021-06-17

Applicant: Kioxia Corporation

Inventor： Genki SAWADA ,  Masayoshi TAGAMI ,  Jun IIJIMA ,  Ippei KUME ,  Kiyomitsu YOSHIDA

IPC: H01L23/00 ,  H01L25/18

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a first pad provided in the first insulator, and including first and second layers provided on lateral and lower faces of the first insulator in order. The device further includes a second insulator provided on the first insulator. The device further includes a second pad provided on the first pad in the second insulator, and including third and fourth layers provided on lateral and upper faces of the second insulator in order. The device further includes a first portion provided between an upper face of the first pad and a lower face of the second insulator or between a lower face of the second pad and an upper face of the first insulator, and including a metal element same as a metal element included in the first layer or the third layer.

公开(公告)号：US20240107756A1

公开(公告)日：2024-03-28

申请号：US18530418

申请日：2023-12-06

Applicant: KIOXIA CORPORATION

Inventor： Kiyomitsu YOSHIDA

IPC: H10B43/20 ,  H01L23/522 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/20 ,  H01L23/5226 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: According to one embodiment, a semiconductor memory device includes a first insulating layer; a first conductive layer provided in the first insulating layer and extending in the first direction; a second conductive layer extending in the first direction and provided adjacent to the first conductive layer in a second direction; and a contact plug coupled to one surface of the first conductive layer in a third direction. Thicknesses in the third direction of portions of the first and second conductive layers that overlap the contact plug in the third direction are smaller than thicknesses in the third direction of portions of the first and second conductive layers that do not overlap the contact plug in the third direction.

公开(公告)号：US20230189517A1

公开(公告)日：2023-06-15

申请号：US17897733

申请日：2022-08-29

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASAKI ,  Hiroshi MATSUMOTO ,  Masahisa SONODA ,  Kiyomitsu YOSHIDA

IPC: H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

CPC classification number: H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

Abstract: A semiconductor device includes a plurality of first electrode films stacked in a first direction and electrically isolated from each other; a plurality of semiconductor members extending in the first direction through the plurality of first electrode films; a first conductive film including a first surface and connected to the plurality of semiconductor members on the first surface; a first insulating film spaced from the first conductive film on a second surface of the first conductive film opposite to the first surface; a first edge member disposed in an edge area that surrounds an element area including the first electrode film, the semiconductor member, and the first conductive film; and a conductive first plug provided between the first edge member and the element area in the edge area and is in contact with the first insulating film.

公开(公告)号：US20210082945A1

公开(公告)日：2021-03-18

申请号：US17005514

申请日：2020-08-28

Applicant: Kioxia Corporation

Inventor： Kiyomitsu YOSHIDA

IPC: H01L27/11578 ,  H01L23/522 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573

Abstract: According to one embodiment, a semiconductor memory device includes a first insulating layer; a first conductive layer provided in the first insulating layer and extending in the first direction; a second conductive layer extending in the first direction and provided adjacent to the first conductive layer in a second direction; and a contact plug coupled to one surface of the first conductive layer in a third direction. Thicknesses in the third direction of portions of the first and second conductive layers that overlap the contact plug in the third direction are smaller than thicknesses in the third direction of portions of the first and second conductive layers that do not overlap the contact plug in the third direction.