公开(公告)号：US10978499B2

公开(公告)日：2021-04-13

申请号：US16525482

申请日：2019-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US12183828B2

公开(公告)日：2024-12-31

申请号：US17546719

申请日：2021-12-09

Applicant: LG Display Co., Ltd.

Inventor： Sunggu Kim ,  DaeHwan Kim

IPC: H01L29/786 ,  H01L29/24

Abstract: A thin film transistor and a display apparatus comprising the same are provided, in which the thin film transistor comprises an active layer, a barrier layer on the active layer; a gate insulating layer on the barrier layer; and a gate electrode on the gate insulating layer, wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and the barrier layer includes an oxide semiconductor material and has a resistivity greater than a resistivity of the active layer and has a thickness less than a thickness of the active layer.

公开(公告)号：US11094793B2

公开(公告)日：2021-08-17

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  DaeHwan Kim ,  JuHeyuck Baeck ,  Jiyong Noh

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3266 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3233

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US20250072056A1

公开(公告)日：2025-02-27

申请号：US18946627

申请日：2024-11-13

Applicant: LG Display Co., Ltd.

Inventor： Sunggu Kim ,  DaeHwan Kim

IPC: H01L29/786 ,  H01L29/24

Abstract: A thin film transistor and a display apparatus comprising the same are provided, in which the thin film transistor comprises an active layer, a barrier layer on the active layer; a gate insulating layer on the barrier layer; and a gate electrode on the gate insulating layer, wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and the barrier layer includes an oxide semiconductor material and has a resistivity greater than a resistivity of the active layer and has a thickness less than a thickness of the active layer.

公开(公告)号：US10811484B2

公开(公告)日：2020-10-20

申请号：US16216560

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan Kim ,  Younghyun Ko

IPC: H01L27/32 ,  G09G3/3291 ,  G09G3/3233

Abstract: An organic light emitting display panel and an organic light emitting display apparatus using the same are disclosed, in which a switching transistor and a driving transistor are provided on their respective layers different from each other. To this end, the organic light emitting display panel comprises a substrate partitioned by a plurality of pixels, a driving transistor provided in a first pixel of the pixels and provided on the substrate in a top gate type, a first insulating film for covering the driving transistor, a switching transistor provided on the first insulating film in a top gate type, a second insulating film for covering the first insulating film and the switching transistor, a planarization film provided on the second insulating film, and an organic light emitting diode provided on the planarization film and connected with a driving first conductor of the driving transistor.

公开(公告)号：US20140291669A1

公开(公告)日：2014-10-02

申请号：US14219385

申请日：2014-03-19

Applicant: LG Display Co., Ltd.

Inventor： KwangHwan Ji ,  DaeHwan Kim ,  JunHyeon Bae

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/70 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78612 ,  H01L29/78696

Abstract: A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer.

Abstract translation: 薄膜晶体管包括基板，形成在基板上的第一栅电极，形成在基板上并包括第一氧化物半导体层和第一势垒层的第一有源层，形成在第一有源层上的第二有源层， 第一有源层，并且包括第二氧化物半导体层和中间阻挡层，形成在第二有源层上的栅极绝缘层，形成在栅极绝缘层上并与第一栅电极电连接的第二栅电极 形成在第二栅电极，第一有源层和第二有源层上的层间绝缘膜，以及与第一有源层和第二有源层电连接的源电极和漏电极。

公开(公告)号：US20220199829A1

公开(公告)日：2022-06-23

申请号：US17546719

申请日：2021-12-09

Applicant: LG Display Co., Ltd.

Inventor： Sunggu Kim ,  DaeHwan Kim

IPC: H01L29/786 ,  H01L29/24

Abstract: A thin film transistor and a display apparatus comprising the same are provided, in which the thin film transistor comprises an active layer, a barrier layer on the active layer; a gate insulating layer on the barrier layer; and a gate electrode on the gate insulating layer, wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and the barrier layer includes an oxide semiconductor material and has a resistivity greater than a resistivity of the active layer and has a thickness less than a thickness of the active layer.

公开(公告)号：US09379249B2

公开(公告)日：2016-06-28

申请号：US14219385

申请日：2014-03-19

Applicant: LG Display Co., Ltd.

Inventor： KwangHwan Ji ,  DaeHwan Kim ,  JunHyeon Bae

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78612 ,  H01L29/78696

Abstract: A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer.

Abstract translation: 薄膜晶体管包括基板，形成在基板上的第一栅电极，形成在基板上并包括第一氧化物半导体层和第一势垒层的第一有源层，形成在第一有源层上的第二有源层， 第一有源层，并且包括第二氧化物半导体层和中间阻挡层，形成在第二有源层上的栅极绝缘层，形成在栅极绝缘层上并与第一栅电极电连接的第二栅电极 形成在第二栅电极，第一有源层和第二有源层上的层间绝缘膜，以及与第一有源层和第二有源层电连接的源电极和漏电极。

公开(公告)号：US20240204076A1

公开(公告)日：2024-06-20

申请号：US18461336

申请日：2023-09-05

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  Uyhyun Choi ,  SeungChan Choi ,  Min-Gu Kang ,  Jaeman Jang ,  DaeHwan Kim ,  Seoyeon Im

IPC: H01L29/49 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L21/02126

Abstract: The thin film transistor, fabrication method thereof, and display apparatus comprising the same are provided. The thin film transistor comprises a base substrate, an oxide semiconductor layer on the base substrate, a channel protection layer in contact with the oxide semiconductor layer, and a gate electrode spaced apart from the oxide semiconductor layer and at least partially overlapped with the oxide semiconductor layer, and the channel protection layer includes carbon.

公开(公告)号：US11658189B2

公开(公告)日：2023-05-23

申请号：US17196805

申请日：2021-03-09

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.