公开(公告)号：US20210143279A1

公开(公告)日：2021-05-13

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20250089301A1

公开(公告)日：2025-03-13

申请号：US18955048

申请日：2024-11-21

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20180374956A1

公开(公告)日：2018-12-27

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  H01L29/66

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20250040192A1

公开(公告)日：2025-01-30

申请号：US18918548

申请日：2024-10-17

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20190123149A1

公开(公告)日：2019-04-25

申请号：US16058156

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  Seoyeon IM ,  Kwon-Shik PARK ,  SungKi KIM

IPC: H01L29/267 ,  H01L29/786 ,  H01L29/24 ,  H01L29/778 ,  H01L27/12

CPC classification number: H01L29/267 ,  G02F1/133305 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0097

Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.

公开(公告)号：US20180350995A1

公开(公告)日：2018-12-06

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20230420572A1

公开(公告)日：2023-12-28

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/41733 ,  G09G2310/08 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20220344512A1

公开(公告)日：2022-10-27

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20200185531A1

公开(公告)日：2020-06-11

申请号：US16790591

申请日：2020-02-13

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20190140101A1

公开(公告)日：2019-05-09

申请号：US16058737

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon IM ,  HeeSung LEE ,  SeungJin KIM ,  SungKi KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L21/385

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.