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公开(公告)号：US11894504B2
公开(公告)日：2024-02-06
申请号：US16943889
申请日：2020-07-30
Applicant: LG Display Co., Ltd.
Inventor： So-Young Noh , So-Yeon Je , Ki-Tae Kim , Kyeong-Ju Moon , Hyuk Ji
CPC classification number: H01L33/62 , H01L33/382 , H01L33/44 , H01L33/54
Abstract: A display apparatus is provided. The display apparatus can include a substrate hole penetrating a device substrate, light-emitting devices spaced away from the substrate hole, and at least one separating device between the substrate hole and the light-emitting devices. Each of the light-emitting devices can include a light-emitting layer between a first electrode and a second electrode. The separating device can surround the substrate hole. The separating device can include at least one under-cut structure. The under-cut structure can include a depth and a length, which are larger than a thickness of the light-emitting layer. Thus, in the display apparatus, the damage of the light-emitting devices due to external moisture permeating through the substrate hole can be prevented.
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公开(公告)号：US20230207570A1
公开(公告)日：2023-06-29
申请号：US18175234
申请日：2023-02-27
Applicant: LG Display Co., Ltd.
Inventor： So-Young Noh , Ki-Tae Kim , Kyeong-Ju Moon , Hyuk Ji , Jin-Kyu Roh , Jung-Doo Jin , Kye-Chul Choi , Dong-Yup Kim , Chan-Ho Kim
CPC classification number: H01L27/1237 , H01L27/1225 , H10K59/12
Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.
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公开(公告)号：US20240381705A1
公开(公告)日：2024-11-14
申请号：US18780021
申请日：2024-07-22
Applicant: LG Display Co., Ltd.
Inventor： Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
IPC: H10K59/124 , H01L29/786
Abstract: A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.
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公开(公告)号：US11837627B2
公开(公告)日：2023-12-05
申请号：US17129651
申请日：2020-12-21
Applicant: LG Display Co., Ltd.
Inventor： Ki-Tae Kim , So-Young Noh , Kyeong-Ju Moon , Hyuk Ji
CPC classification number: H01L27/156 , H01L33/005 , H01L33/12 , H01L33/38 , H01L33/54 , H01L33/62 , H01L2933/005 , H01L2933/0016 , H01L2933/0066
Abstract: The present disclosure provides a display apparatus, a display panel and a method for manufacturing the same. The display panel includes a substrate including a display area including a plurality of sub-pixels, and a gate driving area including a gate driving circuit, a first buffer layer contacting the substrate in the gate driving area, a second thin film transistor disposed in the gate driving area while including a second semiconductor layer made of a second semiconductor, a second buffer layer disposed at a first opening exposing the substrate in the display area while contacting the substrate, and a first thin film transistor disposed at the first opening in the display area while including a first semiconductor layer made of a first semiconductor different from the second semiconductor.
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公开(公告)号：US09891476B2
公开(公告)日：2018-02-13
申请号：US14690775
申请日：2015-04-20
Applicant: LG DISPLAY CO., LTD.
Inventor： Jae-Won Lee , So-Young Noh , Sung-Ki Kim , Jin-Pil Kim , Kyung-Mo Son
IPC: G02F1/1339 , G02F1/1337 , G02F1/1335 , G02F1/1333 , G02F1/1362 , G02F1/1368
CPC classification number: G02F1/1339 , G02F1/133512 , G02F1/133514 , G02F1/1337 , G02F1/133784 , G02F1/13394 , G02F1/136286 , G02F1/1368 , G02F2001/133388 , G02F2001/13396
Abstract: A substrate for a liquid crystal display device includes: a substrate including a display region displaying an image and a non-display region surrounding the display region; a dummy pattern in the non-display area over the substrate, the dummy pattern having a length that corresponds to a side of the display area; and an orientation film on the dummy pattern, the orientation film covering the non-display area and the whole display area.
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Patent Agency Ranking
公开(公告)号：US12022704B2
公开(公告)日：2024-06-25
申请号：US18105682
申请日：2023-02-03
Applicant: LG Display Co., Ltd.
Inventor： Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
IPC: H10K59/131 , H10K50/844
CPC classification number: H10K59/131 , H10K50/844
Abstract: A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.
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公开(公告)号：US11616082B2
公开(公告)日：2023-03-28
申请号：US16920467
申请日：2020-07-03
Applicant: LG Display Co., Ltd.
Inventor： So-Young Noh , Ki-Tae Kim , Kyeong-Ju Moon , Hyuk Ji , Jin-Kyu Roh , Jung-Doo Jin , Kye-Chul Choi , Dong-Yup Kim , Chan-Ho Kim
Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.
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公开(公告)号：US20230157089A1
公开(公告)日：2023-05-18
申请号：US18156228
申请日：2023-01-18
Applicant: LG Display Co., Ltd.
Inventor： Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
IPC: H10K59/124 , H01L29/786
CPC classification number: H10K59/124 , H01L29/7869
Abstract: A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.
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公开(公告)号：US11600684B2
公开(公告)日：2023-03-07
申请号：US17135564
申请日：2020-12-28
Applicant: LG Display Co., Ltd.
Inventor： Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
Abstract: A display apparatus in which a thin film transistor of each pixel region includes an oxide semiconductor pattern is provided. The pixel regions can be disposed on a display area of a device substrate. The display area can be electrically connected to the gate driver by gate lines. An encapsulating element can be disposed on the thin film transistor of each pixel region. The encapsulating element can extend beyond the display area. The gate lines can overlap the encapsulating element. A barrier line can be disposed between the gate lines and the encapsulating element. The barrier line can include a hydrogen barrier material. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to the encapsulating element can be prevented or minimized.
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公开(公告)号：US11587997B2
公开(公告)日：2023-02-21
申请号：US17126547
申请日：2020-12-18
Applicant: LG Display Co., Ltd.
Inventor： Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
IPC: H01L27/00 , H01L29/00 , H01L27/32 , H01L29/786
Abstract: A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.
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