Solar cell and method for manufacturing the same

    公开(公告)号:US10483409B2

    公开(公告)日:2019-11-19

    申请号:US16113853

    申请日:2018-08-27

    Abstract: A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号:US20140020747A1

    公开(公告)日:2014-01-23

    申请号:US13837668

    申请日:2013-03-15

    Abstract: A method of manufacturing a solar cell includes: forming a dopant layer by doping a dopant to a semiconductor substrate; and forming an electrode electrically connected to the dopant layer. The forming of the electrode includes forming a metal layer on the dopant layer; and heat-treating the metal layer to form a first layer and a second layer. In the heat-treating of the metal layer, a portion of the metal layer adjacent to the semiconductor substrate forms the first layer including a compound formed by a reaction of the metal layer and the semiconductor substrate, and a remaining portion of the metal layer forms the second layer that covers the first layer.

    Abstract translation: 制造太阳能电池的方法包括:通过将掺杂剂掺杂到半导体衬底来形成掺杂剂层; 以及形成电连接到所述掺杂剂层的电极。 电极的形成包括在掺杂剂层上形成金属层; 并且对所述金属层进行热处理以形成第一层和第二层。 在金属层的热处理中,与半导体衬底相邻的金属层的一部分形成第一层,该第一层包括由金属层和半导体衬底的反应形成的化合物,并且金属层的剩余部分形成 覆盖第一层的第二层。

    Substrate for manufacturing display device and method for manufacturing display device

    公开(公告)号:US12243759B2

    公开(公告)日:2025-03-04

    申请号:US17620432

    申请日:2019-06-24

    Abstract: Discussed in an assembly substrate used in a display manufacturing method for placing semiconductor light-emitting devices to predetermined positions thereof using an electric field and a magnetic field, the assembly substrate including: a base part; a plurality of pair electrodes extending in one direction and disposed in parallel on the base part; a dielectric layer disposed on the base part to cover the plurality of pair electrodes; and partition walls disposed on the dielectric layer and defining cells at predetermined intervals along the one direction of the plurality of pair electrodes so as to overlap portions of the plurality of pair electrodes, and the semiconductor light-emitting devices being placed into the cells, respectively, wherein at least one of a recess portion and a concave and convex portion is formed on an upper surface of each of the partition walls.

    Solar cell and method for manufacturing the same

    公开(公告)号:US10263127B2

    公开(公告)日:2019-04-16

    申请号:US15947240

    申请日:2018-04-06

    Abstract: A method for manufacturing a solar cell includes forming a conductive type region on one surface of a semiconductor substrate, and forming an electrode on the conductive type region, wherein the forming of the electrode includes forming a metal layer on an entire area of the conductive type region, forming a printed electrode layer having a pattern on the electrode layer, and forming an electrode layer between the conductive type region and the printed electrode layer, wherein the forming of the electrode layer includes patterning the metal layer by using the printed electrode layer as a mask.

    Solar cell and method for manufacturing the same

    公开(公告)号:US10090419B2

    公开(公告)日:2018-10-02

    申请号:US15835194

    申请日:2017-12-07

    Abstract: A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.

    Solar cell
    7.
    发明授权

    公开(公告)号:US10141457B2

    公开(公告)日:2018-11-27

    申请号:US13798355

    申请日:2013-03-13

    Abstract: A solar cell includes a semiconductor substrate of a first conductive type, an emitter region having a second conductive type different from the first conductive type and positioned at a first surface of the semiconductor substrate, a semiconductor region positioned directly on a second surface opposite the first surface of the semiconductor substrate, forming a charge accumulation layer on the second surface of the semiconductor substrate, and containing impurities of the first conductive type, a first electrode positioned on the first surface of the semiconductor substrate and coupled to the emitter region, and a second electrode positioned on the second surface of the semiconductor substrate and coupled to the semiconductor substrate.

    Solar cell and method for manufacturing the same
    8.
    发明授权
    Solar cell and method for manufacturing the same 有权
    太阳能电池及其制造方法

    公开(公告)号:US09515203B2

    公开(公告)日:2016-12-06

    申请号:US13837668

    申请日:2013-03-15

    Abstract: A method of manufacturing a solar cell includes: forming a dopant layer by doping a dopant to a semiconductor substrate; and forming an electrode electrically connected to the dopant layer. The forming of the electrode includes forming a metal layer on the dopant layer; and heat-treating the metal layer to form a first layer and a second layer. In the heat-treating of the metal layer, a portion of the metal layer adjacent to the semiconductor substrate forms the first layer including a compound formed by a reaction of the metal layer and the semiconductor substrate, and a remaining portion of the metal layer forms the second layer that covers the first layer.

    Abstract translation: 制造太阳能电池的方法包括:通过将掺杂剂掺杂到半导体衬底来形成掺杂剂层; 以及形成电连接到所述掺杂剂层的电极。 电极的形成包括在掺杂剂层上形成金属层; 并且对所述金属层进行热处理以形成第一层和第二层。 在金属层的热处理中,与半导体衬底相邻的金属层的一部分形成第一层,该第一层包括由金属层和半导体衬底的反应形成的化合物,并且金属层的剩余部分形成 覆盖第一层的第二层。

    Display manufacturing apparatus
    9.
    发明授权

    公开(公告)号:US12266736B2

    公开(公告)日:2025-04-01

    申请号:US18697303

    申请日:2021-10-01

    Inventor: Ilhwan Kim Kisu Kim

    Abstract: A display manufacturing apparatus includes a foreign substance removal device and an assembly device. The foreign substance removal device removes foreign substances from a plurality of semiconductor light emitting devices. The assembly device assembles the plurality of removed semiconductor light emitting devices on a display substrate. The foreign substance includes magnetic foreign substance and non-magnetic foreign substance. The foreign substance removal device includes a first module for filtering non-magnetic foreign substance among the foreign substance of the plurality of semiconductor light emitting devices, and a second module for filtering magnetic foreign substance among the foreign substances of the plurality of semiconductor light emitting devices.

    Solar cell
    10.
    发明授权

    公开(公告)号:US10424681B2

    公开(公告)日:2019-09-24

    申请号:US14792286

    申请日:2015-07-06

    Abstract: A solar cell is discussed, which includes a tunneling layer on one surface of a semiconductor substrate; a first conductive type region on the tunneling layer; a second conductive type region on the tunneling layer; a first electrode and a second electrode, the first electrode connected to the first conductive type region and the second electrode connected to the second conductive type region. The tunneling layer includes a first portion and a second portion. The first portion is disposed to correspond to at least a part of the first and second conductive type regions and has a first thickness. At least a part of the second portion is disposed to correspond to a boundary portion between the first conductive type region and the second conductive type region. The second portion has a second thickness greater than the first thickness.

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