公开(公告)号：US10283497B2

公开(公告)日：2019-05-07

申请号：US15361475

申请日：2016-11-27

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC: H01L33/00 ,  H01L27/02 ,  H01L29/866 ,  H01L29/872 ,  H01L33/52 ,  H01L33/62 ,  H01L27/15 ,  H01L33/38 ,  H01L25/16

Abstract: The present invention provides a light-emitting diode (LED) chip. The LED chip includes a LED structure and an electrostatic discharge (ESD) protection structure. The ESD protection structure is in a corner of the LED chip and connects with the LED structure in anti-parallel. An interface between the LED structure and the ESD protection structure is a straight line from a top view.

公开(公告)号：US10043950B2

公开(公告)日：2018-08-07

申请号：US15293403

申请日：2016-10-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/38 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.

公开(公告)号：US20170155018A1

公开(公告)日：2017-06-01

申请号：US15293403

申请日：2016-10-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC: H01L33/46 ,  H01L33/54 ,  H01L33/32 ,  H01L33/50 ,  H01L33/62 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/32 ,  H01L33/382 ,  H01L33/505 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16245

Abstract: A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.

公开(公告)号：US20160351751A1

公开(公告)日：2016-12-01

申请号：US14886182

申请日：2015-10-19

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Hung Chen ,  Chao-Hsien Lin

IPC: H01L33/40 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L2933/0016

Abstract: A semiconductor light emitting structure and a manufacturing method thereof are provided. The semiconductor light emitting structure includes a substrate, an epitaxial layer and a stepped electrode. The substrate has a first surface and a second surface opposite to the first surface. The epitaxial layer is formed by a first semiconductor layer, an active layer and a second semiconductor layer which are stacked on the first surface in sequence. The stepped electrode is formed within the epitaxial layer, and includes a main body portion, a step level and a reflection electrode portion extended towards the first surface from the step level. The main body portion at least passes through the second semiconductor layer and the active layer. The reflection electrode portion is extended into the first semiconductor layer from the main body portion.

Abstract translation: 提供半导体发光结构及其制造方法。 半导体发光结构包括衬底，外延层和阶梯电极。 基板具有与第一表面相对的第一表面和第二表面。 外延层由依次堆叠在第一表面上的第一半导体层，有源层和第二半导体层形成。 所述阶梯电极形成在所述外延层内，并且包括从所述台阶级朝向所述第一表面延伸的主体部分，台阶级和反射电极部。 主体部分至少穿过第二半导体层和有源层。 反射电极部从主体部延伸到第一半导体层。