公开(公告)号：US20240378144A1

公开(公告)日：2024-11-14

申请号：US18195540

申请日：2023-05-10

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Ming-Hsiu LEE ,  Tian-Cih BO

IPC: G06F12/02

Abstract: A 3D search engine receives searches for application to word lines of a nonvolatile memory array. The engine uses two word lines per bit of information of the searches and two memory devices per bit of stored feature to search against, optionally enabling don't care and/or wildcard encoding. The engine uses respective bit lines of the nonvolatile memory array as respective matching lines for searching. Respective memory strings (e.g., NAND memory strings) of the nonvolatile memory array are usable to store respective data words, e.g., corresponding to features to search for. Respective pluralities of the memory strings are coupled in parallel to respective shared bit lines. Various encodings of features and searches enable exact, approximate, and range matching. The engine has applicability to comparing and sorting, in addition to searching in application areas such as artificial intelligence (AI) and big data.

公开(公告)号：US20240257873A1

公开(公告)日：2024-08-01

申请号：US18162728

申请日：2023-02-01

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Yu-Hsuan LIN ,  Tian-Cih BO ,  Feng-Min LEE ,  Yu-Yu LIN

IPC: G11C15/04

CPC classification number: G11C15/046

Abstract: A hybrid in-memory search (IMS) content addressable memory (CAM) cell includes: a first IMS CAM cell; and a second IMS CAM cell, coupled to the first IMS CAM cell. The first IMS CAM cell and the second IMS CAM cell are of different types. When the hybrid IMS CAM cell stores a storage data, the first IMS CAM cell stores a first part of the storage data and the second IMS CAM cell stores the storage data or a second part of the storage data.

公开(公告)号：US20250022510A1

公开(公告)日：2025-01-16

申请号：US18903055

申请日：2024-10-01

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Tian-Cih BO ,  Feng-Min LEE

IPC: G11C15/04

Abstract: A hybrid type content addressable memory for implementing in-memory-search and an operation method thereof are provided. The CAM includes a plurality of CAM strings and at least one sense amplifier circuit. Each of the CAM strings includes a plurality of CAM cells. The CAM cells store a plurality of existing data. The sense amplifier circuit is connected to the CAM strings. A plurality of search data are inputted to the CAM strings. A plurality of cell matching results obtained from the CAM cells in each of the CAM strings are integrated via an AND operation to obtain a string matching result. The string matching results obtained from the CAM strings are integrated via an OR operation.

公开(公告)号：US20240274165A1

公开(公告)日：2024-08-15

申请号：US18167108

申请日：2023-02-10

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Tian-Cih BO ,  Feng-Min LEE

IPC: G11C7/10 ,  G11C7/06

CPC classification number: G11C7/1069 ,  G11C7/067

Abstract: A memory device for performing in-memory-search. A search voltage corresponding to a search data is applied to the first signal lines. A plurality of second signal lines of the memory device generate output currents. The threshold voltage of each of the memory cells of the memory device corresponds to a stored data, the stored data is compared with the search data to obtain a comparison result. The output current reflects the comparison result. Values of the stored data and search data of the first memory cells are equal to values of the stored data and the search data of the second memory cells. The threshold voltage of the first memory cells is complementary to the threshold voltage of the second memory cells. The search voltage applied to the first memory cells is complementary to the search voltage applied to the second memory cells.

公开(公告)号：US20240021254A1

公开(公告)日：2024-01-18

申请号：US17812243

申请日：2022-07-13

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Tian-Cih BO

IPC: G11C16/34 ,  G11C16/30 ,  G11C16/26

CPC classification number: G11C16/3404 ,  G11C16/30 ,  G11C16/26

Abstract: A memory device for in-memory search is provided. The memory device includes a plurality of memory cells, and each of the memory cells stores a stored data and receives a search data, including a first transistor and a second transistor. The first transistor has a first threshold voltage and receives a first gate bias. The second transistor is connected to the first transistor, and the second transistor has a second threshold voltage and receives a second gate bias. The stored data is encoded according to the first threshold voltage and the second threshold voltage, and the search data is encoded according to the first gate bias and the second gate bias. There is a mismatch distance between the stored data and the search data. An output current generated by each of the memory cells is related to the mismatch distance.

公开(公告)号：US20240012567A1

公开(公告)日：2024-01-11

申请号：US18069255

申请日：2022-12-21

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Feng-Min LEE ,  Tian-Cih BO ,  Ming-Hsiu LEE

IPC: G06F3/06

CPC classification number: G06F3/0614 ,  G06F3/0659 ,  G06F3/0673

Abstract: A memory device is provided. The memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. The memory device is configured for performing a first operation for m times and a second operation for n times, and m is equal to or larger than n. In the first operation, a first electric field is produced in a portion of the memory layers. The word lines are configured for producing a second electric field in the second operation in the portion of the memory layers, and a field direction of the second electric field is different from a field direction of the first electric field.

公开(公告)号：US20230420047A1

公开(公告)日：2023-12-28

申请号：US17846304

申请日：2022-06-22

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Po-Hao TSENG ,  Tian-Cih BO ,  Feng-Min LEE

IPC: G11C15/04

CPC classification number: G11C15/04

Abstract: A hybrid type content addressable memory for implementing in-memory-search and an operation method thereof are provided. The CAM includes a plurality of CAM strings and at least one sense amplifier circuit. Each of the CAM strings includes a plurality of CAM cells. The CAM cells store a plurality of existing data. The sense amplifier circuit is connected to the CAM strings. A plurality of search data are inputted to the CAM strings. A plurality of cell matching results obtained from the CAM cells in each of the CAM strings are integrated via an AND operation to obtain a string matching result. The string matching results obtained from the CAM strings are integrated via an OR operation.