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公开(公告)号：US10374149B2
公开(公告)日：2019-08-06
申请号：US16006588
申请日：2018-06-12
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US09768377B2
公开(公告)日：2017-09-19
申请号：US14558367
申请日：2014-12-02
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Jonathan D. Harms , Sunil Murthy
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.
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公开(公告)号：US09680089B1
公开(公告)日：2017-06-13
申请号：US15154033
申请日：2016-05-13
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US09478735B1
公开(公告)日：2016-10-25
申请号：US14746421
申请日：2015-06-22
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
Abstract: Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.
Abstract translation: 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁性电极，与第一电极间隔开并包含磁性参考材料的导电第二磁性电极以及第一和第二电极之间的非磁性绝缘体材料。 第一电极的磁记录材料包括在一对非含铱区域之间具有含铱区域的组。 在一些实施方案中，非含铱的区域是含钴区域。
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公开(公告)号：US09373779B1
公开(公告)日：2016-06-21
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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Patent Agency Ranking
公开(公告)号：US20160163967A1
公开(公告)日：2016-06-09
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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公开(公告)号：US09344345B2
公开(公告)日：2016-05-17
申请号：US14219748
申请日：2014-03-19
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy
Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.
Abstract translation: 旋转转矩传递存储器单元及其形成方法在此描述。 作为示例，自旋扭矩传递存储单元可以包括自对准偏振器，钉扎偏振器和形成在自对准偏振器和被钉入偏振器之间的存储材料。
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公开(公告)号：US20190305211A1
公开(公告)日：2019-10-03
申请号：US16434634
申请日：2019-06-07
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US20190097125A1
公开(公告)日：2019-03-28
申请号：US16202536
申请日：2018-11-28
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Sunil Murthy , Witold Kula
Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.
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公开(公告)号：US20180233657A1
公开(公告)日：2018-08-16
申请号：US15952507
申请日：2018-04-13
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Sunil Murthy , Witold Kula
CPC classification number: H01L43/02 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.
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