公开(公告)号：US20150153333A1

公开(公告)日：2015-06-04

申请号：US14414905

申请日：2013-07-23

Applicant: MYCARTIS NV

Inventor： Raphael Tornay ,  Nicolas Demierre ,  Stephan Gamper ,  Philippe Renaud

IPC: G01N33/53 ,  C23F1/02

CPC classification number: G01N33/5306 ,  B01L3/502707 ,  B01L3/502761 ,  B01L3/545 ,  B01L2200/0647 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/0803 ,  B01L2300/0819 ,  B01L2300/0893 ,  C23F1/02 ,  G01N33/54373

Abstract: The method according to the invention consists in providing a wafer having a bottom layer, a top first sacrificial layer and an insulating layer, structuring the first sacrificial layer to form a three dimensional structure onto which a first structural layer is deposited to define a corresponding three dimensional structure on the bottom surface of the first structural layer. The method consists also in forming a second three dimensional structure on the upper surface of the first structural layer.

Abstract translation: 根据本发明的方法在于提供具有底层，顶部第一牺牲层和绝缘层的晶片，构造第一牺牲层以形成三维结构，在其上沉积第一结构层以限定对应的三 在第一结构层的底表面上的尺寸结构。 该方法还包括在第一结构层的上表面上形成第二三维结构。

公开(公告)号：US09400275B2

公开(公告)日：2016-07-26

申请号：US14414905

申请日：2013-07-23

Applicant: MYCARTIS NV

Inventor： Raphael Tornay ,  Nicolas Demierre ,  Stephan Gamper ,  Philippe Renaud

IPC: G01N33/53 ,  B01L3/00 ,  G01N33/543 ,  C23F1/02

CPC classification number: G01N33/5306 ,  B01L3/502707 ,  B01L3/502761 ,  B01L3/545 ,  B01L2200/0647 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/0803 ,  B01L2300/0819 ,  B01L2300/0893 ,  C23F1/02 ,  G01N33/54373

Abstract: The method according to the invention consists in providing a wafer having a bottom layer, a top first sacrificial layer and an insulating layer, structuring the first sacrificial layer to form a three dimensional structure onto which a first structural layer is deposited to define a corresponding three dimensional structure on the bottom surface of the first structural layer. The method consists also in forming a second three dimensional structure on the upper surface of the first structural layer.

Abstract translation: 根据本发明的方法在于提供具有底层，顶部第一牺牲层和绝缘层的晶片，构造第一牺牲层以形成三维结构，在其上沉积第一结构层以限定对应的三 在第一结构层的底表面上的尺寸结构。 该方法还包括在第一结构层的上表面上形成第二三维结构。

公开(公告)号：US09333501B2

公开(公告)日：2016-05-10

申请号：US14414513

申请日：2013-07-22

Applicant: MYCARTIS NV

Inventor： Nicolas Demierre ,  Stephan Gamper ,  Raphael Tornay ,  Philippe Renaud

IPC: B01L3/00 ,  G01N15/14

CPC classification number: B01L3/502707 ,  B01L3/502761 ,  B01L3/545 ,  B01L2200/0647 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/0803 ,  B01L2300/0819 ,  B01L2300/0893 ,  B01L2300/16 ,  G01N15/1456

Abstract: The present invention relates to a method for producing microcarriers, the method comprising the steps of providing a wafer having a bottom layer, a top layer and an insulating layer, structuring the top layer to define at least one three-dimensional structure on the top surface of the top layer, etching away the top layer to delineate lateral walls of bodies of the microcarriers, applying a continuous polymer layer over the top surface of the bodies of the microcarriers, removing the bottom layer and the insulating layer, structuring the bottom surfaces of the bodies of the microcarriers to define at least one three-dimensional structure on the bottom surface of each body, and removing the polymer layer to release the microcarriers.

Abstract translation: 本发明涉及一种生产微载体的方法，该方法包括以下步骤：提供具有底层，顶层和绝缘层的晶片，构成顶层以在顶表面上限定至少一个三维结构 顶层，蚀刻顶层以描绘微载体的主体的侧壁，在微载体的主体的顶表面上施加连续的聚合物层，去除底层和绝缘层，构成底层的底表面 微载体的主体在每个主体的底表面上限定至少一个三维结构，并且移除聚合物层以释放微载体。

公开(公告)号：US20150190803A1

公开(公告)日：2015-07-09

申请号：US14414513

申请日：2013-07-22

Applicant: MYCARTIS NV

Inventor： Nicolas Demierre ,  Stephan Gamper ,  Raphael Tornay ,  Philippe Renaud

IPC: B01L3/00

CPC classification number: B01L3/502707 ,  B01L3/502761 ,  B01L3/545 ,  B01L2200/0647 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/0803 ,  B01L2300/0819 ,  B01L2300/0893 ,  B01L2300/16 ,  G01N15/1456

Abstract: The present invention relates to a method for producing microcarriers, the method comprising the steps of providing a wafer having a bottom layer, a top layer and an insulating layer, structuring the top layer to define at least one three-dimensional structure on the top surface of the top layer, etching away the top layer to delineate lateral walls of bodies of the microcarriers, applying a continuous polymer layer over the top surface of the bodies of the microcarriers, removing the bottom layer and the insulating layer, structuring the bottom surfaces of the bodies of the microcarriers to define at least one three-dimensional structure on the bottom surface of each body, and removing the polymer layer to release the microcarriers.

Abstract translation: 本发明涉及一种生产微载体的方法，该方法包括以下步骤：提供具有底层，顶层和绝缘层的晶片，构成顶层以在顶表面上限定至少一个三维结构 顶层，蚀刻顶层以描绘微载体的主体的侧壁，在微载体的主体的顶表面上施加连续的聚合物层，去除底层和绝缘层，构成底层的底表面 微载体的主体在每个主体的底表面上限定至少一个三维结构，并且移除聚合物层以释放微载体。

公开(公告)号：US20150162141A1

公开(公告)日：2015-06-11

申请号：US14414174

申请日：2013-07-22

Applicant: MYCARTIS NV

Inventor： Raphael Tornay ,  Nicolas Demierre ,  Stephan Gamper ,  Philippe Renaud

IPC: H01G13/06

CPC classification number: H01G13/06 ,  B01J2219/005 ,  B01J2219/00502 ,  B01J2219/00536 ,  B01J2219/00556 ,  B01J2219/00637 ,  B01L3/502707 ,  B01L3/502761 ,  B01L3/508 ,  B01L3/54 ,  B01L3/545 ,  B01L2200/0647 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/0803 ,  B01L2300/0819 ,  B01L2300/0851 ,  B01L2300/0893 ,  B81B2201/058 ,  B81B2201/06 ,  B81C99/008 ,  G01N33/54313

Abstract: The present invention relates to a method for producing microcarriers comprising the following steps: (a) providing a wafer having a sandwich structure comprising a bottom layer, a top layer and an insulating layer located between said bottom and top layers, (b) etching away the top layer to delineate lateral walls of bodies of the microcarriers, (c) depositing a first active layer at least on a top surface of the bodies, (d) applying a continuous polymer layer over the first active layer, (e) etching away the bottom layer and the insulating layer, (f) removing the polymer layer to release the microcarriers.

Abstract translation: 本发明涉及一种生产微载体的方法，包括以下步骤：（a）提供具有夹层结构的晶片，该夹层结构包括位于所述底层和顶层之间的底层，顶层和绝缘层，（b）蚀刻掉 描绘微载体的主体的侧壁的顶层，（c）至少在主体的顶表面上沉积第一有源层，（d）在第一有源层上施加连续聚合物层，（e）蚀刻掉 底层和绝缘层，（f）去除聚合物层以释放微载体。

公开(公告)号：US09349545B2

公开(公告)日：2016-05-24

申请号：US14414174

申请日：2013-07-22

Applicant: MYCARTIS NV

Inventor： Raphael Tornay ,  Nicolas Demierre ,  Stephan Gamper ,  Philippe Renaud

IPC: H01G13/06 ,  B01L3/00 ,  B81C99/00 ,  G01N33/543

CPC classification number: H01G13/06 ,  B01J2219/005 ,  B01J2219/00502 ,  B01J2219/00536 ,  B01J2219/00556 ,  B01J2219/00637 ,  B01L3/502707 ,  B01L3/502761 ,  B01L3/508 ,  B01L3/54 ,  B01L3/545 ,  B01L2200/0647 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/0803 ,  B01L2300/0819 ,  B01L2300/0851 ,  B01L2300/0893 ,  B81B2201/058 ,  B81B2201/06 ,  B81C99/008 ,  G01N33/54313

Abstract: The present invention relates to a method for producing microcarriers comprising the following steps: (a) providing a wafer having a sandwich structure comprising a bottom layer, a top layer and an insulating layer located between said bottom and top layers, (b) etching away the top layer to delineate lateral walls of bodies of the microcarriers, (c) depositing a first active layer at least on a top surface of the bodies, (d) applying a continuous polymer layer over the first active layer, (e) etching away the bottom layer and the insulating layer, (f) removing the polymer layer to release the microcarriers.

Abstract translation: 本发明涉及一种生产微载体的方法，包括以下步骤：（a）提供具有夹层结构的晶片，该夹层结构包括位于所述底层和顶层之间的底层，顶层和绝缘层，（b）蚀刻掉 描绘微载体的主体的侧壁的顶层，（c）至少在主体的顶表面上沉积第一有源层，（d）在第一有源层上施加连续聚合物层，（e）蚀刻掉 底层和绝缘层，（f）去除聚合物层以释放微载体。