Enhanced Isolation For Combinatorial Atomic Layer Deposition (ALD)
    4.
    发明申请
    Enhanced Isolation For Combinatorial Atomic Layer Deposition (ALD) 审中-公开
    组合原子层沉积(ALD)的增强隔离

    公开(公告)号:US20130171832A1

    公开(公告)日:2013-07-04

    申请号:US13338507

    申请日:2011-12-28

    Applicant: Wayne French

    Inventor: Wayne French

    Abstract: An apparatus and method for delivering fluids to a semiconductor chamber for combinatorial processing is provided. In some embodiments the apparatus is comprised of a showerhead assembly having a plurality of processing sectors separated by a purge member. The processing sectors are configured to receive one or more processing fluids for combinatorial processing on a substrate. The processing sectors are isolated by a purge fluid conveyed through the purge member. The purge member is configured to selectively control the profile of the purge fluid to enhance isolation of the processing fluids within each sector. The profile of the purge fluid is manipulated by selectively controlling the shape and/or density of the purge curtain, independently between each processing sector.

    Abstract translation: 提供了用于将流体输送到半导体室用于组合处理的装置和方法。 在一些实施例中,装置包括具有由吹扫构件隔开的多个处理扇区的喷头组件。 处理扇区被配置为在衬底上接收用于组合处理的一个或多个处理流体。 处理扇区由通过吹扫构件输送的吹扫流体隔离。 吹扫构件构造成选择性地控制吹扫流体的轮廓以增强每个扇区内的处理流体的隔离。 通过在每个处理扇区之间独立地选择性地控制吹扫帘的形状和/或密度来操纵吹扫流体的轮廓。

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