LOW RESISTIVITY MATERIALS FOR USE IN ELECTROIDES
    1.
    发明申请
    LOW RESISTIVITY MATERIALS FOR USE IN ELECTROIDES 审中-公开
    低电阻材料用于电极

    公开(公告)号:US20160278215A1

    公开(公告)日:2016-09-22

    申请号:US15164169

    申请日:2016-05-25

    摘要: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.

    摘要翻译: 本发明提供了一种生产纯相锶氧化钌薄膜的方法,该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度,同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物,从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料,其中该材料不含RuO 2。

    Method for producing thin film electrodes
    2.
    发明授权
    Method for producing thin film electrodes 有权
    薄膜电极的制造方法

    公开(公告)号:US09359223B2

    公开(公告)日:2016-06-07

    申请号:US13237487

    申请日:2011-09-20

    IPC分类号: B05D5/12 C01G55/00 H01L49/02

    摘要: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.

    摘要翻译: 本发明提供了一种生产纯相锶氧化钌薄膜的方法,该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度,同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物,从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料,其中该材料不含RuO 2。

    METHOD FOR PRODUCING THIN FILM ELECTRODES
    3.
    发明申请
    METHOD FOR PRODUCING THIN FILM ELECTRODES 有权
    生产薄膜电极的方法

    公开(公告)号:US20130071670A1

    公开(公告)日:2013-03-21

    申请号:US13237487

    申请日:2011-09-20

    摘要: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.

    摘要翻译: 本发明提供了一种生产纯相锶氧化钌薄膜的方法,该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度,同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物,从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料,其中该材料不含RuO 2。