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1.发明申请Method for the preparation of graphite nanofibers and emitter and display elements comprising the nanofibers 审中-公开用于制备石墨纳米纤维的方法和包含纳米纤维的发射体和显示元件公开(公告)号：US20050099111A1
公开(公告)日：2005-05-12
申请号：US10663838
申请日：2003-09-17
申请人： Masaaki Hirakawa , Osamu Miura , Hirohiko Murakami , Kazunaga Ono , Kenji Fujii , Kensuke Okasaka , Takaei Sasaki
发明人： Masaaki Hirakawa , Osamu Miura , Hirohiko Murakami , Kazunaga Ono , Kenji Fujii , Kensuke Okasaka , Takaei Sasaki
IPC分类号： C01B31/02 , B82B3/00 , C23C16/26 , C30B25/02 , C30B29/60 , D01F9/127 , H01J1/304 , H01J9/02 , H01J31/12
CPC分类号： D01F9/127 , B82Y10/00 , B82Y30/00 , C30B25/02 , C30B29/605 , H01J1/3044 , H01J9/025 , H01J2201/30469
摘要： A method for preparing a graphite nanofiber is herein provided, which comprises a raw gases are supplied on the surface of a substrate provided thereon with a catalyst layer for the growth of graphite nanofibers according to the CVD technique, wherein the method is characterized by forming a catalyst layer having a desired thickness and then forming, on the catalyst layer of the substrate, a graphite nanofiber whose overall thickness is controlled and which comprises a graphite nanofiber layer and a non-fibrous layer. The resulting graphite nanofibers can be used in an emitter or a field emission display element. The thickness of the catalyst layer formed on a substrate is controlled by the method and this in turn permits the control of the thickness of the non-fibrous layer formed on the catalyst layer and the control of the thickness of the graphite nanofibers likewise formed on the catalyst layer.
摘要翻译： 本发明提供一种制备石墨纳米纤维的方法，其中包括在其上设置有根据CVD技术生长石墨纳米纤维的催化剂层的基材的表面上提供原料气体，其特征在于形成 催化剂层，然后在基板的催化剂层上形成整体厚度被控制并且包括石墨纳米纤维层和非纤维层的石墨纳米纤维。 所得石墨纳米纤维可用于发射体或场发射显示元件。 通过该方法控制形成在基板上的催化剂层的厚度，这又允许控制形成在催化剂层上的非纤维层的厚度和同样形成在该催化剂层上的石墨纳米纤维的厚度的控制 催化剂层。
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公开(公告)号：US20100294651A1
公开(公告)日：2010-11-25
申请号：US12682549
申请日：2008-10-09
申请人： Fumihiko Yamada , Toshiharu Ozaki , Takaei Sasaki , Masahiko Ishizuka , Kagehiro Kageyama , Hiroyuki Iso , Ryouichi Kobayashi , Atsushi Hayashi
发明人： Fumihiko Yamada , Toshiharu Ozaki , Takaei Sasaki , Masahiko Ishizuka , Kagehiro Kageyama , Hiroyuki Iso , Ryouichi Kobayashi , Atsushi Hayashi
IPC分类号： C23C14/34
CPC分类号： G03F1/50
摘要： A method for manufacturing a gray-tone mask that decreases the wavelength dependency with respect to an exposure wavelength under stable and simple film formation conditions. A reactive sputtering method that sputters a pure Cr target in an atmosphere of Ar and NO is used to form a Cr nitride film having a single-layer structure. Based on a plurality of different spectral transmittance curves obtained under a plurality of film formation conditions having different NO concentrations, a target concentration (intermediate value) for NO is obtained that sets the transmittance uniformity of the semi-transparent film to 1.0% or less in the range of 365 nm to 436 nm or 4.0% or less in the range of 300 nm to 500 nm. Then, a semi-transparent film is formed by using the NO target concentration.
摘要翻译： 一种用于制造在稳定且简单的成膜条件下降低相对于曝光波长的波长依赖性的灰色调掩模的方法。 使用在Ar和NO的气氛中喷射纯Cr靶的反应性溅射法形成具有单层结构的Cr氮化物膜。 基于在具有不同NO浓度的多个成膜条件下获得的多个不同的光谱透射率曲线，获得了将半透明膜的透射率均匀性设定为1.0％以下的目标浓度（中间值）为1.0％以下 365nm至436nm的范围或在300nm至500nm的范围内为4.0％以下的范围。 然后，使用NO靶浓度形成半透明膜。
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3.发明授权公开(公告)号：US07063922B2
公开(公告)日：2006-06-20
申请号：US10706971
申请日：2003-11-14
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , C23F4/00 , H01J37/3266
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬半色调相移膜的金属薄膜的步骤，其特征在于，使用包括（a）和（c）的混合气体作为蚀刻气体， 在对金属薄膜进行干蚀刻的工序中，含有含氧气体和含卤素气体的反应离子蚀刻气体和（b）添加到气体成分（a）中的还原气体。 干蚀刻方法允许通过在用于含铬半色调相移掩模的光掩模坯料上形成要转印到晶片上的图案来生产半色调相移光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。
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公开(公告)号：US20060124245A1
公开(公告)日：2006-06-15
申请号：US11347264
申请日：2006-02-06
申请人： Masashi Kikuchi , Hitoshi Ikeda , Kiyoshi Kuwahara , Toshio Hayashi , Noriyuki Harashima , Takaei Sasaki
发明人： Masashi Kikuchi , Hitoshi Ikeda , Kiyoshi Kuwahara , Toshio Hayashi , Noriyuki Harashima , Takaei Sasaki
IPC分类号： C23F1/00
CPC分类号： C03C17/06 , C03C15/00 , C03C2217/26 , C03C2218/33
摘要： A plasma processing method and a plasma processing system provide advantages of a high degree of selectivity, a large area processing capability and an enhanced precision level. A plasma processing method according to the invention is so designed that a pulse modulation power is supplied alternately to the plasma generating power supply and the substrate bias power supply by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate. In a plasma processing system according to the invention, the plasma generating power supply and the substrate bias power supply are provided with modulation means for supplying a pulse modulation power alternately to the plasma generating section and the substrate electrode by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate.
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5.发明授权公开(公告)号：US06391791B1
公开(公告)日：2002-05-21
申请号：US09361159
申请日：1999-07-27
IPC分类号： H01L21302
CPC分类号： H01J37/3266 , G03F1/80 , H01J37/32743 , H01L21/32136
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬膜的金属薄膜的步骤，其特征在于，使用包括（a）反应离子蚀刻气体的混合气体作为蚀刻气体，其特征在于， 含有含氧气体和含卤素气体，（b）在对金属薄膜进行干法蚀刻的工序中，向气体成分（a）中添加还原气体。 干蚀刻方法允许通过在光掩模坯料上形成要转印到晶片上的图案来制造光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。
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6.发明授权公开(公告)号：US07001698B2
公开(公告)日：2006-02-21
申请号：US10712032
申请日：2003-11-14
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23F4/00 , H01J37/3266
摘要： A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, developing, etching said photomask blank and removing said resist layer. Patterns for transferring onto a wafer are formed on the photomask blank by a dry-etching method comprising dry-etching a chromium-containing half-tone phase-shift film utilizing etching gas comprised of mixed gas including (a) reactive ion etching gas, containing an oxygen-containing gas and a halogen-containing gas, and (b) reducing gas added to the gas component (a).
摘要翻译： 通过一系列图案形成步骤制备包含在平面中共存的粗和密集图案的含铬半色调相移光掩模，包括在光掩模坯料上形成抗蚀剂层，曝光和图案化所述抗蚀剂层，显影，蚀刻 所述光掩模坯料和去除所述抗蚀剂层。 用于转印到晶片上的图案通过干蚀刻方法形成在光掩模坯料上，该方法包括使用包括（a）反应性离子蚀刻气体的混合气体的蚀刻气体干法蚀刻含铬半色调相移膜，所述混合气体包含 含氧气体和含卤素气体，（b）还原气体成分（a）中的气体。
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7.发明申请公开(公告)号：US20050011862A1
公开(公告)日：2005-01-20
申请号：US10712032
申请日：2003-11-14
IPC分类号： H01L21/302 , C23F4/00 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/306 , H01L21/3065 , C23F1/00
CPC分类号： G03F1/32 , C23F4/00 , H01J37/3266
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬半色调相移膜的金属薄膜的步骤，其特征在于，使用包括（a）和（c）的混合气体作为蚀刻气体， 在对金属薄膜进行干蚀刻的工序中，含有含氧气体和含卤素气体的反应离子蚀刻气体和（b）添加到气体成分（a）中的还原气体。 干蚀刻方法允许通过在用于含铬半色调相移掩模的光掩模坯料上形成要转印到晶片上的图案来生产半色调相移光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。
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8.发明授权公开(公告)号：US06685848B1
公开(公告)日：2004-02-03
申请号：US09361158
申请日：1999-07-27
IPC分类号： C23F100
CPC分类号： G03F1/32 , C23F4/00 , H01J37/3266
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬半色调相移膜的金属薄膜的步骤，其特征在于，使用包括（a）和（c）的混合气体作为蚀刻气体， 在对金属薄膜进行干蚀刻的工序中，含有含氧气体和含卤素气体的反应性离子蚀刻气体和（b）添加到气体成分（a）中的还原气体。 干蚀刻方法允许通过在用于含铬半色调相移掩模的光掩模坯料上形成要转印到晶片上的图案来生产半色调相移光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。
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9.发明授权公开(公告)号：US06881991B2
公开(公告)日：2005-04-19
申请号：US10107329
申请日：2002-03-28
IPC分类号： H01L21/302 , G03F1/08 , G03F7/40 , H01L21/3065 , H01L21/3213 , H01L21/768 , H01L29/80
CPC分类号： H01J37/3266 , G03F1/80 , H01J37/32743 , H01L21/32136
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译： 干蚀刻方法包括干法蚀刻作为含铬膜的金属薄膜的步骤，其特征在于，使用包括（a）反应离子蚀刻气体的混合气体作为蚀刻气体，其特征在于， 含有含氧气体和含卤素气体，（b）在对金属薄膜进行干法蚀刻的工序中，向气体成分（a）中添加还原气体。 干蚀刻方法允许通过在光掩模坯料上形成要转印到晶片上的图案来制造光掩模。 光掩模又可用于制造半导体电路。 该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。
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公开(公告)号：US06844117B2
公开(公告)日：2005-01-18
申请号：US10107439
申请日：2002-03-28
申请人： Takaei Sasaki , Noriyuki Harashima
发明人： Takaei Sasaki , Noriyuki Harashima
IPC分类号： H01L21/302 , G03F1/08 , G03F7/40 , H01L21/3065 , H01L21/3213 , H01L21/768 , G03F9/00
CPC分类号： H01J37/3266 , G03F1/80 , H01J37/32743 , H01L21/32136
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
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