公开(公告)号：US06561869B2

公开(公告)日：2003-05-13

申请号：US09731857

申请日：2000-12-08

申请人： Masahiro Asano ,  Katsumi Nagasaka ,  Toshiya Hayashi ,  Hisatoshi Kojima

发明人： Masahiro Asano ,  Katsumi Nagasaka ,  Toshiya Hayashi ,  Hisatoshi Kojima

IPC分类号： B24B4900

CPC分类号： B24B5/185 ,  B23F19/007 ,  B24B19/009 ,  B24B49/16

摘要： A gear grinding machine and a gear grinding method, in which a gear-shaped grinding stone is caused to engage a gear-like workpiece and one of the gear-shaped grinding stone and the gear-like workpiece is reciprocated relatively to the other in axial direction thereby to grind the tooth flanks of the workpiece, are disclosed. The rotational resistance is applied by a brake unit to the rotationally driven side. The grinding resistance and the rotational resistance interfering with the relative reciprocal motion are detected by torque sensors and input to a control unit, the average value of each of the signals is compared with a reference value by an arithmetic unit and, in the case where there is a difference between the average value and the reference value, the rotational resistance is changed by activating the brake unit. Thus, a high machining accuracy can be maintained even when the sharpness of the grinding stone is reduced.

公开(公告)号：US06942555B2

公开(公告)日：2005-09-13

申请号：US10347994

申请日：2003-01-20

申请人： Toshiya Hayashi ,  Hisatoshi Kojima ,  Kazuki Kataoka ,  Toru Nakanoboh

发明人： Toshiya Hayashi ,  Hisatoshi Kojima ,  Kazuki Kataoka ,  Toru Nakanoboh

IPC分类号： B24D5/02 ,  B23F21/03 ,  B24B53/00 ,  B24D3/00 ,  B24D3/06 ,  B24D18/00 ,  B24B17/00

CPC分类号： B24D18/0018 ,  B23F21/03 ,  B24B53/001 ,  B24D3/06 ,  Y10S451/90

摘要： A highly accurate, long-life grindstone for shaping a gear and a method of fabricating the grindstone, without depending on the accuracy of form of a base metal and without using a special grinding machine or a special lapping machine, are disclosed. A super-abrasive layer (29) of a predetermined thickness is fixedly attached on the outer periphery of a body portion (24) of the base metal (23) formed in a cylinder solid. The super-abrasive layer (29) is metal-bonded, and has the outer periphery thereof formed with a toothed portion (31) in the shape of the teeth of an external gear by electric discharge machining.

摘要翻译： 公开了一种用于成形齿轮的高精度，长寿命的磨石和制造磨石的方法，而不依赖于贱金属的形状的精度，而不使用特殊的研磨机或特殊研磨机。 具有预定厚度的超研磨层（29）固定地安装在形成为气缸固体的母材（23）的主体部分（24）的外周上。 超研磨层（29）金属接合，并且其外周形成有通过放电加工形成外齿形齿的齿部（31）。

公开(公告)号：US20060093507A1

公开(公告)日：2006-05-04

申请号：US11259059

申请日：2005-10-27

申请人： Takahiro Yamaguchi ,  Takashi Satou ,  Shigeki Torii ,  Toshiya Hayashi ,  Akihiro Yada ,  Hitoshi Mizutani ,  Takuya Fukitsuke ,  Kazunori Uchiyama ,  Naoki Hakamada

发明人： Takahiro Yamaguchi ,  Takashi Satou ,  Shigeki Torii ,  Toshiya Hayashi ,  Akihiro Yada ,  Hitoshi Mizutani ,  Takuya Fukitsuke ,  Kazunori Uchiyama ,  Naoki Hakamada

IPC分类号： F01C1/02 ,  F03C4/00 ,  F16N13/20 ,  F01C1/063

CPC分类号： B60T8/4031 ,  F04C2/086 ,  F04C2/102 ,  F04C15/06

摘要： The curvature of a circular arc constituted by a side of a suction groove is made larger than that of a circular arc constituted by a side of a discharge groove. Thus, when the suction groove and the discharge groove are viewed in the axial direction of a drive shaft, the distance between the suction groove and the discharge groove in the radial direction of a rotary portion is short in a region intersecting with a line W perpendicular to a centerline, and increases in accordance with a decrease in distance from containment portions. It is therefore possible to ensure a sufficient distance between the discharge and suction grooves and enhance a total fluid pressure generated therebetween, and the contact surface pressure that is necessitated by a second side plate to obtain a press-back force when being in contact with an outer rotor and an inner rotor is reduced.

摘要翻译： 由吸引槽的一侧构成的圆弧的曲率比由排出槽的一侧构成的圆弧的曲率大。 因此，当在驱动轴的轴向上观察吸入槽和排出槽时，旋转部的径向方向上的吸入槽和排出槽之间的距离在垂直于线W的区域中短 到中心线，并且随着距离容纳部分的距离的减小而增加。 因此，可以确保排出和吸入槽之间的足够的距离，并增强其间产生的总的流体压力，以及当与第二侧板接触时获得压靠力所需的接触表面压力 外转子和内转子减少。

公开(公告)号：US06194816B1

公开(公告)日：2001-02-27

申请号：US09101813

申请日：1998-07-17

申请人： Hisao Wakabayashi ,  Hiroaki Takayanagi ,  Toshinori Ide ,  Toshiya Hayashi

发明人： Hisao Wakabayashi ,  Hiroaki Takayanagi ,  Toshinori Ide ,  Toshiya Hayashi

IPC分类号： H01L4104

CPC分类号： H03H9/0519 ,  B23K35/268

摘要： A base (10) has a substantially cylindrical plug (12) penetrated by two leads 14. A piezoelectric oscillator (24) is secured to and supported on ends of the two leads by supports (26). The supports (26) are formed from solder having as high lead content of more than 60% by weight, preferably 85 to 98% by weight. A cap (28) open at one end is fitted on the piezoelectric oscillator (24). The plug (12) seals the open end of the cap (28) and forms a gas-tight casing, thus forming a piezoelectric oscillator unit with piezoelectric oscillator (24) held gas-tight in the inside. The high lead content solder is soft and has a low Young's Modulus, so that it can disperse stress when the piezoelectric oscillator experiences. It is thus possible to evade stress concentration on the piezoelectric oscillator (24) and improve shock resistance. A layer of a solder with a lead content of 60% by weight or less or of tin or a tin alloy, is formed on the surface of the leads (14), and ensures solder wetting property.

摘要翻译： 基座（10）具有由两个引线14穿透的大致圆柱形的塞子（12）。压电振荡器（24）通过支撑件（26）固定并支撑在两个引线的端部上。 载体（26）由铅含量高于60重量％，优选85-98重量％的焊料形成。 在一端开口的帽（28）安装在压电振子（24）上。 插头（12）密封盖（28）的开口端并形成气密的壳体，从而形成压电振荡器单元，其压电振荡器（24）在内部保持气密。 高铅含量焊料是柔软的并且具有低的杨氏模量，使得当压电振荡器经历时它可以分散应力。 因此可以避免压电振子（24）上的应力集中并提高抗冲击性。 在引线（14）的表面上形成铅含量为60重量％以下的锡或锡或锡合金的焊料层，并且确保焊料润湿性。

公开(公告)号：US20080305628A1

公开(公告)日：2008-12-11

申请号：US12174330

申请日：2008-07-16

申请人： Toshiya Hayashi ,  Tatsurou Tezuka

发明人： Toshiya Hayashi ,  Tatsurou Tezuka

IPC分类号： H01L21/4763

CPC分类号： H01L21/7685 ,  H01L21/76805

摘要： An underlying interconnect including a first barrier metal layer, an interconnect metal layer and a second barrier metal layer is formed on a semiconductor substrate, and an interlayer dielectric is formed thereon. Etching is performed with a photoresist defining an opening for a first via, and an opening for a second via having a larger bottom area than the first via opening, so as to form a first via hole and a second via hole in the interlayer dielectric. Since the second via hole has a larger diameter than the second via hole, the second via hole is opened up prior to the second via hole, and the underlying interconnect is exposed first at the bottom of the second via hole.

摘要翻译： 在半导体衬底上形成包括第一阻挡金属层，互连金属层和第二阻挡金属层的底层互连，并在其上形成层间电介质。 用限定用于第一通孔的开口的光致抗蚀剂和具有比第一通孔开口更大的底面积的第二通孔的开口进行蚀刻，以在层间电介质中形成第一通孔和第二通孔。 由于第二通孔具有比第二通孔更大的直径，所以第二通孔在第二通孔之前被打开，下面的互连首先暴露在第二通孔的底部。

公开(公告)号：US07417319B2

公开(公告)日：2008-08-26

申请号：US11136405

申请日：2005-05-25

申请人： Toshiya Hayashi ,  Tatsurou Tezuka

发明人： Toshiya Hayashi ,  Tatsurou Tezuka

IPC分类号： H01L23/48

CPC分类号： H01L21/7685 ,  H01L21/76805

摘要： An underlying interconnect including a first barrier metal layer, an interconnect metal layer and a second barrier metal layer is formed on a semiconductor substrate, and an interlayer dielectric is formed thereon. Etching is performed with a photoresist defining an opening for a first via, and an opening for a second via having a larger bottom area than the first via opening, so as to form a first via hole and a second via hole in the interlayer dielectric. Since the second via hole has a larger diameter than the second via hole, the second via hole is opened up prior to the second via hole, and the underlying interconnect is exposed first at the bottom of the second via hole.

摘要翻译： 在半导体衬底上形成包括第一阻挡金属层，互连金属层和第二阻挡金属层的底层互连，并在其上形成层间电介质。 用限定用于第一通孔的开口的光致抗蚀剂和具有比第一通孔开口更大的底面积的第二通孔的开口进行蚀刻，以在层间电介质中形成第一通孔和第二通孔。 由于第二通孔具有比第二通孔更大的直径，所以第二通孔在第二通孔之前被打开，下面的互连首先暴露在第二通孔的底部。

公开(公告)号：US20050266677A1

公开(公告)日：2005-12-01

申请号：US11136405

申请日：2005-05-25

申请人： Toshiya Hayashi ,  Tatsurou Tezuka

发明人： Toshiya Hayashi ,  Tatsurou Tezuka

IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L23/525

CPC分类号： H01L21/7685 ,  H01L21/76805

摘要： An underlying interconnect including a first barrier metal layer, an interconnect metal layer and a second barrier metal layer is formed on a semiconductor substrate, and an interlayer dielectric is formed thereon. Etching is performed with a photoresist defining an opening for a first via, and an opening for a second via having a larger bottom area than the first via opening, so as to form a first via hole and a second via hole in the interlayer dielectric. Since the second via hole has a larger diameter than the second via hole, the second via hole is opened up prior to the second via hole, and the underlying interconnect is exposed first at the bottom of the second via hole.

摘要翻译： 在半导体衬底上形成包括第一阻挡金属层，互连金属层和第二阻挡金属层的底层互连，并在其上形成层间电介质。 用限定用于第一通孔的开口的光致抗蚀剂和具有比第一通孔开口更大的底面积的第二通孔的开口进行蚀刻，以在层间电介质中形成第一通孔和第二通孔。 由于第二通孔具有比第二通孔更大的直径，所以第二通孔在第二通孔之前被打开，下面的互连首先暴露在第二通孔的底部。

公开(公告)号：US07399171B2

公开(公告)日：2008-07-15

申请号：US11259059

申请日：2005-10-27

申请人： Takahiro Yamaguchi ,  Takashi Satou ,  Shigeki Torii ,  Toshiya Hayashi ,  Akihiro Yada ,  Hitoshi Mizutani ,  Takuya Fukitsuke ,  Kazunori Uchiyama ,  Naoki Hakamada

发明人： Takahiro Yamaguchi ,  Takashi Satou ,  Shigeki Torii ,  Toshiya Hayashi ,  Akihiro Yada ,  Hitoshi Mizutani ,  Takuya Fukitsuke ,  Kazunori Uchiyama ,  Naoki Hakamada

IPC分类号： F04C18/00

CPC分类号： B60T8/4031 ,  F04C2/086 ,  F04C2/102 ,  F04C15/06

摘要： The curvature of a circular arc constituted by a side of a suction groove is made larger than that of a circular arc constituted by a side of a discharge groove. Thus, when the suction groove and the discharge groove are viewed in the axial direction of a drive shaft, the distance between the suction groove and the discharge groove in the radial direction of a rotary portion is short in a region intersecting with a line W perpendicular to a centerline, and increases in accordance with a decrease in distance from containment portions. It is therefore possible to ensure a sufficient distance between the discharge and suction grooves and enhance a total fluid pressure generated therebetween, and the contact surface pressure that is necessitated by a second side plate to obtain a press-back force when being in contact with an outer rotor and an inner rotor is reduced.

摘要翻译： 由吸引槽的一侧构成的圆弧的曲率比由排出槽的一侧构成的圆弧的曲率大。 因此，当在驱动轴的轴向上观察吸入槽和排出槽时，旋转部的径向方向上的吸入槽和排出槽之间的距离在垂直于线W的区域中短 到中心线，并且随着距离容纳部分的距离的减小而增加。 因此，可以确保排出和吸入槽之间的足够的距离，并增强其间产生的总的流体压力，以及当与第二侧板接触时获得压靠力所需的接触表面压力 外转子和内转子减少。

公开(公告)号：US06444549B2

公开(公告)日：2002-09-03

申请号：US09144938

申请日：1998-09-01

申请人： Toshiya Hayashi ,  Kouji Hamada ,  Naoharu Nishio ,  Kousuke Miyoshi ,  Shuichi Saito

发明人： Toshiya Hayashi ,  Kouji Hamada ,  Naoharu Nishio ,  Kousuke Miyoshi ,  Shuichi Saito

IPC分类号： H01L21425

CPC分类号： H01L29/6609 ,  H01L21/2652 ,  H01L21/266 ,  H01L21/324

摘要： Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate of at least 200° C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (&sgr;/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

摘要翻译： 在制造半导体器件时，以高能量对半导体衬底进行离子注入。 离子注入的半导体衬底的随后的退火，当通过以至少200℃/秒的升温速度将衬底加热至1000℃至1200℃的温度进行时，可以使 为所得到的半导体器件提供具有减小的变化（sigma / X）的较小泄漏电流。 因此，本发明可以提供制造半导体器件的方法，即使当以高能量进行离子注入时，具有更小的漏电流和漏电流的减小的变化。