公开(公告)号：US08077292B2

公开(公告)日：2011-12-13

申请号：US12395513

申请日：2009-02-27

申请人： Yosuke Kitamura ,  Masaki Satake ,  Shoji Mimotogi ,  Kazuya Fukuhara

发明人： Yosuke Kitamura ,  Masaki Satake ,  Shoji Mimotogi ,  Kazuya Fukuhara

IPC分类号： G03B27/52

CPC分类号： G03B27/42 ,  G03B27/72

摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.

摘要翻译： 一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中 在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其他区域中的强度高，掩模具有 多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于 八角形通过光轴。

公开(公告)号：US20080004852A1

公开(公告)日：2008-01-03

申请号：US11806174

申请日：2007-05-30

申请人： Masaki Satake ,  Shoji Mimotogi

发明人： Masaki Satake ,  Shoji Mimotogi

IPC分类号： G06F17/50

CPC分类号： G03F7/70625 ,  G03F7/705 ,  G03F7/70516

摘要： A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.

摘要翻译： 一种创建仿真模型的方法，包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值，获取关于光致抗蚀剂图案的形状的信息，基于测试图案获取光学图像的强度分布，通过执行 模拟，获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值，基于光学图像的强度分布获取光学图像的参数，获取第一相关性 关于光致抗蚀剂图案的形状和光学图像的参数的信息，获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性，以及获取光学图像的参数和 经验阈值通过使用第一和第二相关。

公开(公告)号：US07840390B2

公开(公告)日：2010-11-23

申请号：US11806174

申请日：2007-05-30

申请人： Masaki Satake ,  Shoji Mimotogi

发明人： Masaki Satake ,  Shoji Mimotogi

IPC分类号： G06F17/10

CPC分类号： G03F7/70625 ,  G03F7/705 ,  G03F7/70516

摘要： A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.

摘要翻译： 一种创建仿真模型的方法，包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值，获取关于光致抗蚀剂图案的形状的信息，基于测试图案获取光学图像的强度分布，通过执行 模拟，获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值，基于光学图像的强度分布获取光学图像的参数，获取第一相关性 关于光致抗蚀剂图案的形状和光学图像的参数的信息，获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性，以及获取光学图像的参数和 经验阈值通过使用第一和第二相关。

公开(公告)号：US20090244504A1

公开(公告)日：2009-10-01

申请号：US12395513

申请日：2009-02-27

申请人： Yosuke Kitamura ,  Masaki Satake ,  Shoji Mimotogi ,  Kazuya Fukuhara

发明人： Yosuke Kitamura ,  Masaki Satake ,  Shoji Mimotogi ,  Kazuya Fukuhara

IPC分类号： G03B27/42 ,  G03B27/72

CPC分类号： G03B27/42 ,  G03B27/72

摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.

摘要翻译： 一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中 在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其它区域中的强度高，掩模具有 多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于 八角形通过光轴。

公开(公告)号：US08381138B2

公开(公告)日：2013-02-19

申请号：US13420690

申请日：2012-03-15

申请人： Tetsuaki Matsunawa ,  Shoji Mimotogi ,  Masafumi Asano

发明人： Tetsuaki Matsunawa ,  Shoji Mimotogi ,  Masafumi Asano

IPC分类号： G06F17/50

CPC分类号： G03F7/705

摘要： According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed.

摘要翻译： 根据实施例的模拟模型创建方法，通过以暴露量和焦点值改变在第一基板上转印掩模图案并且测量抗蚀剂图案的线宽来形成抗蚀剂图案。 接下来，除去由于曝光量的不规则性，焦点值或图案特征量的不规则性而在允许的变化范围内的测量结果。 此外，除去由于掩模图案的线宽的不规则性而在允许的变化范围内不具有的测量结果。 接下来，通过使用未被去除的测量结果来创建模拟模型。

公开(公告)号：US20120324407A1

公开(公告)日：2012-12-20

申请号：US13420690

申请日：2012-03-15

申请人： Tetsuaki MATSUNAWA ,  Shoji Mimotogi ,  Masafumi Asano

发明人： Tetsuaki MATSUNAWA ,  Shoji Mimotogi ,  Masafumi Asano

IPC分类号： G06F17/50

CPC分类号： G03F7/705

摘要： According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed.

摘要翻译： 根据实施例的模拟模型创建方法，通过以暴露量和焦点值改变在第一基板上转印掩模图案并且测量抗蚀剂图案的线宽来形成抗蚀剂图案。 接下来，除去由于曝光量的不规则性，焦点值或图案特征量的不规则性而在允许的变化范围内的测量结果。 此外，除去由于掩模图案的线宽的不规则性而在允许的变化范围内不具有的测量结果。 接下来，通过使用未被去除的测量结果来创建模拟模型。

公开(公告)号：US07793252B2

公开(公告)日：2010-09-07

申请号：US12222479

申请日：2008-08-11

申请人： Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

发明人： Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

IPC分类号： G06F17/50 ,  G03F9/00

CPC分类号： G03F7/70433 ,  G03F7/705

摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern to be interested, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern to be interested and a pattern of a neighboring region, the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern to be interested; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern to be interested and the reference intensity line in the changed relative position to define an interested line width of the pattern to be interested.

摘要翻译： 光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案对应的部分中，根据感兴趣的图案之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置 以及相邻区域的图案，所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述基准强度线被定义为指定所述图案的边缘的位置; 以及计算与感兴趣的图案对应的潜在图像曲线的一部分的交点与变化的相对位置中的基准强度线之间的距离，以定义感兴趣的图案的感兴趣的线宽。

公开(公告)号：US07248349B2

公开(公告)日：2007-07-24

申请号：US11220701

申请日：2005-09-08

申请人： Takashi Sato ,  Shoji Mimotogi ,  Takahiro Ikeda ,  Soichi Inoue

发明人： Takashi Sato ,  Shoji Mimotogi ,  Takahiro Ikeda ,  Soichi Inoue

IPC分类号： G01B9/00 ,  G01B11/00 ,  G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70516

摘要： There is disclosed an exposure method for correcting a focal point, comprising: illuminating a mask, in which a mask-pattern including at least a set of a first mask-pattern and a second mask-pattern mutually different in shape is formed, from a direction in which a point located off an optical axis of an exposure apparatus is a center of illumination, and exposing and projecting an image of said mask-pattern toward an image-receiving element; measuring a mutual relative distance between images of said first and second mask-patterns exposed and projected on said image-receiving element, thereby measuring a focal point of a projecting optical system of said exposure apparatus; and moving said image-receiving element along a direction of said optical axis of said exposure apparatus on a basis of a result of said measurement, and disposing said image-receiving element at an appropriate focal point of said projecting optical system.

摘要翻译： 公开了一种用于校正焦点的曝光方法，包括：照射掩模，其中形成包括至少一组第一掩模图案和形成相互不同形状的第二掩模图案的掩模图案 使曝光装置的光轴离开的点为照明中心的方向，向图像接收元件曝光和投影所述掩模图案的图像; 测量曝光和投影在所述图像接收元件上的所述第一和第二掩模图案的图像之间的相对相对距离，从而测量所述曝光设备的投影光学系统的焦点; 并且基于所述测量的结果沿所述曝光装置的所述光轴的方向移动所述图像接收元件，并将所述图像接收元件设置在所述投影光学系统的适当焦点处。

公开(公告)号：US07118834B2

公开(公告)日：2006-10-10

申请号：US10814303

申请日：2004-04-01

申请人： Takashi Sato ,  Shoji Mimotogi ,  Shigeru Hasebe

发明人： Takashi Sato ,  Shoji Mimotogi ,  Shigeru Hasebe

IPC分类号： G01F9/00 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： An exposure method is disclosed, which comprises preparing a first mask in which a size of a mask pattern is measured in advance, calculating a first exposure quantity to be applied to the first mask to provide a first resist pattern by using the first mask, simulating optical intensity distributions on a wafer in a case where the first mask is used and an optical intensity distribution on the wafer in a case where a second mask is used, a size of a mask pattern of the second mask being measured in advance, calculating a difference in optical intensity between the first mask and the second mask from the simulated optical intensity distributions, and calculating a second exposure quantity to be applied to the second mask to provide a second resist pattern, from the first exposure quantity and the difference in optical intensity.

公开(公告)号：US20060172207A1

公开(公告)日：2006-08-03

申请号：US11044266

申请日：2005-01-28

申请人： Megumi Asaba ,  Kenji Yoshida ,  Masatoshi Ueda ,  Shoji Mimotogi

发明人： Megumi Asaba ,  Kenji Yoshida ,  Masatoshi Ueda ,  Shoji Mimotogi

IPC分类号： G03C5/00

CPC分类号： G03F7/70641 ,  G03F7/70625

摘要： An exposure analyzing system includes a microscope measuring CDs in resist patterns, each of the resist patterns being formed by specific defocus and dose conditions, an exposure condition calculator calculating functions of the specific defocus and dose conditions, each of the functions giving one of the CDs, an image arranger arranging images of the resist patterns in a matrix having a first coordinate axis arranging the defocus conditions and a second coordinate axis arranging the dose conditions, and a graphic controller displaying the images and the functions in a coordinate plane implemented by the first and second coordinate axes.

摘要翻译： 曝光分析系统包括显微镜测量抗蚀剂图案的CD，每个抗蚀剂图案通过特定的散焦和剂量条件形成，曝光条件计算器计算特定散焦和剂量条件的功能，每个功能给出一个CD 图像排列器，其将具有布置散焦条件的第一坐标轴的阵列中的抗蚀剂图案的图像和排列剂量条件的第二坐标轴布置;以及图形控制器，其在由第一 和第二坐标轴。