公开(公告)号：US20230096467A1

公开(公告)日：2023-03-30

申请号：US18050438

申请日：2022-10-27

Applicant: Micron Technology, Inc.

Inventor： Darwin A. Clampitt ,  Roger W. Lindsay ,  Jeffrey D. Runia ,  Matthew Holland ,  Chamunda N. Chamunda

IPC: H01L23/522 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11519 ,  G11C8/14 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  G11C7/18 ,  H01L27/11565

Abstract: A microelectronic device comprises a stack structure, a stadium structure within the stack structure, and conductive contact structures. The stack structure comprises a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. Each of the tiers comprises one of the conductive structures and one of the insulative structures. The stadium structure comprises a forward staircase structure having steps comprising edges of the tiers, and a reverse staircase structure opposing the forward staircase structure and having additional steps comprising additional edges of the tiers. The conductive contact structures vertically extend to upper vertical boundaries of at least some of the conductive structures of the stack structure at the steps of the forward staircase structure and the additional steps of the reverse staircase structure, and are each integral and continuous with one of the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US11942422B2

公开(公告)日：2024-03-26

申请号：US18050438

申请日：2022-10-27

Applicant: Micron Technology, Inc.

Inventor： Darwin A. Clampitt ,  Roger W. Lindsay ,  Jeffrey D. Runia ,  Matthew Holland ,  Chamunda N. Chamunda

IPC: H01L23/522 ,  G11C7/18 ,  G11C8/14 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/5226 ,  G11C7/18 ,  G11C8/14 ,  H01L23/5283 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A microelectronic device comprises a stack structure, a stadium structure within the stack structure, and conductive contact structures. The stack structure comprises a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. Each of the tiers comprises one of the conductive structures and one of the insulative structures. The stadium structure comprises a forward staircase structure having steps comprising edges of the tiers, and a reverse staircase structure opposing the forward staircase structure and having additional steps comprising additional edges of the tiers. The conductive contact structures vertically extend to upper vertical boundaries of at least some of the conductive structures of the stack structure at the steps of the forward staircase structure and the additional steps of the reverse staircase structure, and are each integral and continuous with one of the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20250167055A1

公开(公告)日：2025-05-22

申请号：US18952448

申请日：2024-11-19

Applicant: Micron Technology, Inc.

Inventor： Mithun Kumar Ramasahayam ,  Amitava Majumdar ,  Jeffrey D. Runia ,  Merri L. Carlson

IPC: H01L21/66

Abstract: Semiconductor devices and associated methods are shown. A device may include an array of memory cells formed on a semiconductor substrate. A device may include one or more test pattern regions located at edges adjacent to the array of memory cells, the one or more test pattern regions including, an array of parallel conductive lines; and wherein selected lines of the array of parallel conductive lines are electrically coupled to ground to detect defects during a test procedure.

公开(公告)号：US20240088031A1

公开(公告)日：2024-03-14

申请号：US17930656

申请日：2022-09-08

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Bo Zhao ,  Jeffrey D. Runia ,  Nancy M. Lomeli

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76895 ,  H01L23/535

Abstract: A microelectronic device includes a stack structure including a block region and a non-block region. The block region includes blocks separated from one another in a first horizontal direction by insulative slot structures and each including a vertically alternating sequence of conductive material and insulative material arranged in tiers. At least one of the blocks has stadium structures individually including staircase structures having steps comprising edges of some of the tiers. The non-block region neighbors the block region in the first horizontal direction. The non-block region includes additional stadium structures individually terminating at a relatively higher vertical position within the stack structure than at least one of the stadium structures at least partially within boundaries thereof in a second horizontal direction orthogonal to the first horizontal direction. Related memory devices, electronic systems, and methods are also described.

公开(公告)号：US11495530B2

公开(公告)日：2022-11-08

申请号：US16864823

申请日：2020-05-01

Applicant: Micron Technology, Inc.

Inventor： Darwin A. Clampitt ,  Roger W. Lindsay ,  Jeffrey D. Runia ,  Matthew Holland ,  Chamunda N. Chamunda

IPC: H01L23/522 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11519 ,  G11C8/14 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  G11C7/18 ,  H01L27/11565

Abstract: A microelectronic device comprises a stack structure, a stadium structure within the stack structure, and conductive contact structures. The stack structure comprises a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. Each of the tiers comprises one of the conductive structures and one of the insulative structures. The stadium structure comprises a forward staircase structure having steps comprising edges of the tiers, and a reverse staircase structure opposing the forward staircase structure and having additional steps comprising additional edges of the tiers. The conductive contact structures vertically extend to upper vertical boundaries of at least some of the conductive structures of the stack structure at the steps of the forward staircase structure and the additional steps of the reverse staircase structure, and are each integral and continuous with one of the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20210343637A1

公开(公告)日：2021-11-04

申请号：US16864823

申请日：2020-05-01

Applicant: Micron Technology, Inc.

Inventor： Darwin A. Clampitt ,  Roger W. Lindsay ,  Jeffrey D. Runia ,  Matthew Holland ,  Chamunda N. Chamunda

IPC: H01L23/522 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  G11C7/18 ,  G11C8/14

Abstract: A microelectronic device comprises a stack structure, a stadium structure within the stack structure, and conductive contact structures. The stack structure comprises a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. Each of the tiers comprises one of the conductive structures and one of the insulative structures. The stadium structure comprises a forward staircase structure having steps comprising edges of the tiers, and a reverse staircase structure opposing the forward staircase structure and having additional steps comprising additional edges of the tiers. The conductive contact structures vertically extend to upper vertical boundaries of at least some of the conductive structures of the stack structure at the steps of the forward staircase structure and the additional steps of the reverse staircase structure, and are each integral and continuous with one of the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.