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    Methods of forming capacitors
    2.
    发明授权
    Methods of forming capacitors 有权

    公开(公告)号：US09159780B2

    公开(公告)日：2015-10-13

    申请号：US14596429

    申请日：2015-01-14

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC: H01L21/02 ,  H01L49/02 ,  H01L21/3213 ,  H01L27/108

    CPC classification number: H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    Abstract: A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

    Methods Of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates
    4.
    发明申请
    Methods Of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates 有权
    半导体衬底处理方法，半导体制造过程中形成开口的方法以及从半导体衬底去除微粒的方法

    公开(公告)号：US20130302995A1

    公开(公告)日：2013-11-14

    申请号：US13948043

    申请日：2013-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

    IPC: H01L21/306

    CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

    Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

    Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

    Methods of Forming Capacitors
    5.
    发明申请
    Methods of Forming Capacitors 有权
    形成电容器的方法

    公开(公告)号：US20150126016A1

    公开(公告)日：2015-05-07

    申请号：US14596429

    申请日：2015-01-14

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC: H01L49/02 ,  H01L21/3213 ,  H01L27/108

    CPC classification number: H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    Abstract: A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

    Abstract translation: 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的单个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。

    Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates
    6.
    发明授权
    Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates 有权
    处理半导体衬底的方法，半导体制造期间形成开口的方法，以及从半导体衬底上去除颗粒的方法

    公开(公告)号：US08969217B2

    公开(公告)日：2015-03-03

    申请号：US13948043

    申请日：2013-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

    IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  B08B3/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

    CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

    Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

    Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的漂洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

    Methods of Forming Capacitors
    7.
    发明申请
    Methods of Forming Capacitors 审中-公开

    公开(公告)号：US20160013263A1

    公开(公告)日：2016-01-14

    申请号：US14861831

    申请日：2015-09-22

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC: H01L49/02 ,  H01L27/108 ,  H01L21/3213

    CPC classification number: H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    Abstract: A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

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