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    Memory Programming Methods and Memory Systems
    2.
    发明申请
    Memory Programming Methods and Memory Systems 有权
    内存编程方法和内存系统

    公开(公告)号：US20160118119A1

    公开(公告)日：2016-04-28

    申请号：US14987630

    申请日：2016-01-04

    Applicant: Micron Technology, Inc.

    Inventor： Jonathan Strand ,  Adam Johnson ,  Xiaonan Chen ,  Durai Vishak Nirmal Ramaswamy

    IPC: G11C13/00

    CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C29/08 ,  G11C29/50008 ,  G11C2013/0073 ,  G11C2029/0409 ,  G11C2029/5006

    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

    Abstract translation: 描述了存储器编程方法和存储器系统。 一个示例性存储器编程方法包括：首先将第一信号施加到存储器单元以尝试将存储器单元编程到期望状态，其中第一信号对应于期望状态，在第一次施加之后，确定存储器单元不能放置 在所需状态下，在确定之后，向存储单元施加第二信号，其中第二信号对应于与期望状态不同的另一状态，并且在第二次施加之后，第三信号施加到存储单元 将存储器单元编程到所需状态，其中第三信号对应于期望状态。 描述附加的方法和装置。

    Memory programming methods and memory systems
    3.
    发明授权
    Memory programming methods and memory systems 有权

    公开(公告)号：US10991427B2

    公开(公告)日：2021-04-27

    申请号：US16422690

    申请日：2019-05-24

    Applicant: Micron Technology, Inc.

    Inventor： Jonathan Strand ,  Adam Johnson ,  Xiaonan Chen ,  Durai Vishak Nirmal Ramaswamy

    IPC: G11C11/00 ,  G11C13/00 ,  G11C29/50 ,  G11C29/08 ,  G11C29/04

    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

    Systems, and devices, and methods for programming a resistive memory cell
    4.
    发明授权
    Systems, and devices, and methods for programming a resistive memory cell 有权
    系统和设备以及用于编程电阻式存储单元的方法

    公开(公告)号：US09576658B2

    公开(公告)日：2017-02-21

    申请号：US15053562

    申请日：2016-02-25

    Applicant: Micron Technology, Inc.

    Inventor： Xiaonan Chen

    IPC: G11C11/16 ,  G11C13/00 ,  G11C11/56

    CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2013/0092

    Abstract: Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. The memory cell may have more than two possible programmed states, where each programmed state of the memory cell includes a different fraction of amorphous material. A memory element may be melted and then quenched. The fraction of amorphous material, and thus the programmed state, may be controlled by selecting one of multiple quenching periods for the programming pulse.

    Abstract translation: 本文公开的实施例可以涉及使用包括具有不同部分的淬火周期的编程脉冲对存储器单元进行编程。 存储单元可以具有多于两个可能的编程状态，其中存储单元的每个编程状态包括不同分数的无定形材料。 可以将记忆元件熔化然后骤冷。 可以通过选择编程脉冲的多个淬灭周期之一来控制无定形材料的分数，从而编程状态。

    PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY
    5.
    发明申请
    PERFORMING FORMING PROCESSES ON RESISTIVE MEMORY 有权
    在电阻记忆体上形成成形工艺

    公开(公告)号：US20140313814A1

    公开(公告)日：2014-10-23

    申请号：US14250106

    申请日：2014-04-10

    Applicant: Micron Technology, Inc.

    Inventor： Xiaonan Chen

    IPC: G11C13/00

    CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/0092 ,  Y10T29/49002

    Abstract: The present disclosure includes apparatuses and methods for performing forming processes on resistive memory. A number of embodiments include applying a formation signal to the storage element of a resistive memory cell, wherein the formation signal includes a first portion having a first polarity and a first amplitude, a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude, and a third portion having the first polarity and a third amplitude that is smaller than the first amplitude.

    Abstract translation: 本公开包括用于在电阻性存储器上执行形成处理的装置和方法。 许多实施例包括将形成信号施加到电阻式存储单元的存储元件，其中形成信号包括具有第一极性和第一幅度的第一部分，具有第二极性和第二幅度的第二部分，其中， 第二极性与第一极性相反，第二振幅小于第一振幅，第三极部分具有第一极性，第三振幅小于第一振幅。

    Variable resistance memory programming
    6.
    发明授权
    Variable resistance memory programming 有权
    可变电阻存储器编程

    公开(公告)号：US08773899B2

    公开(公告)日：2014-07-08

    申请号：US13897040

    申请日：2013-05-17

    Applicant: Micron Technology, Inc.

    Inventor： Xiaonan Chen

    IPC: G11C11/00

    CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0064 ,  G11C2013/0092

    Abstract: Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described.

    Abstract translation: 一些实施例包括具有存储元件的设备和将信息存储到存储器元件中的方法。 这样的方法可以包括在操作期间增加存储元件的一部分时间间隔的温度以改变存储元件的电阻状态。 在时间间隔之后，方法可以包括降低存储元件部分的温度。 可以使用具有第一负斜率和第二负斜率的信号来执行降低温度。 描述其他实施例。

    VARIABLE RESISTANCE MEMORY PROGRAMMING
    7.
    发明申请
    VARIABLE RESISTANCE MEMORY PROGRAMMING 有权
    可变电阻记忆编程

    公开(公告)号：US20130258754A1

    公开(公告)日：2013-10-03

    申请号：US13897040

    申请日：2013-05-17

    Applicant: Micron Technology, Inc.

    Inventor： Xiaonan Chen

    IPC: G11C13/00

    CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0064 ,  G11C2013/0092

    Abstract: Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described.

    Abstract translation: 一些实施例包括具有存储元件的设备和将信息存储到存储器元件中的方法。 这样的方法可以包括在操作期间增加存储元件的一部分时间间隔的温度以改变存储元件的电阻状态。 在时间间隔之后，方法可以包括降低存储元件部分的温度。 可以使用具有第一负斜率和第二负斜率的信号来执行降低温度。 描述其他实施例。

    SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL
    9.
    发明申请
    SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL 有权
    系统和装置，以及编程电阻记忆体的方法

    公开(公告)号：US20160180932A1

    公开(公告)日：2016-06-23

    申请号：US15053562

    申请日：2016-02-25

    Applicant: Micron Technology, Inc.

    Inventor： Xiaonan Chen

    IPC: G11C13/00 ,  G11C11/56

    CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2013/0092

    Abstract: Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. The memory cell may have more than two possible programmed states, where each programmed state of the memory cell includes a different fraction of amorphous material. A memory element may be melted and then quenched. The fraction of amorphous material, and thus the programmed state, may be controlled by selecting one of multiple quenching periods for the programming pulse.

    Abstract translation: 本文公开的实施例可以涉及使用包括具有不同部分的淬火周期的编程脉冲对存储器单元进行编程。 存储单元可以具有多于两个可能的编程状态，其中存储单元的每个编程状态包括不同分数的无定形材料。 可以将记忆元件熔化然后骤冷。 可以通过选择编程脉冲的多个淬灭周期之一来控制无定形材料的分数，从而编程状态。

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