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公开(公告)号：US20240096792A1
公开(公告)日：2024-03-21
申请号：US18522110
申请日：2023-11-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Masao KONDO , Shigeki KOYA , Takayuki TSUTSUI
IPC: H01L23/528 , H01L23/00 , H01L23/64 , H01L25/065
CPC classification number: H01L23/528 , H01L23/64 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L24/16 , H01L2224/16225 , H01L2224/32227 , H01L2224/32238 , H01L2224/48229 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06541 , H01L2924/19011
Abstract: A semiconductor module comprises a first member including a semiconductor substrate made of a compound semiconductor and a first electronic circuit on the semiconductor substrate is mounted on a mounting surface of a module substrate, and a second member including a semiconductor layer formed of a single semiconductor thinner than the semiconductor substrate of the first member and a second electronic circuit on the semiconductor layer is bonded to an upper surface of the first member. First and second pads are respectively connected to the first electronic circuit on the first member and the second electronic circuit on the second member. A first wire connects the first pad and a substrate side pad. A second wire connects the second pad and a substrate side pad. An inter-member connection wire made of a conductor film on the first and second members connects the first and second electronic circuits.
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公开(公告)号：US20220123698A1
公开(公告)日：2022-04-21
申请号：US17503919
申请日：2021-10-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Yuri HONDA , Yoshiki KOGUSHI
Abstract: A power amplifier circuit includes a differential amplifier circuit configured to amplify a radio-frequency signal, a transformer disposed on an output side with respect to the differential amplifier circuit and including a primary winding and a secondary winding, and a dispersion circuit coupled to a midpoint of the primary winding of the transformer and configured to operate as an adjustment circuit. The dispersion circuit is configured to adjust, based on a supply voltage controlled in accordance with the envelope of the radio-frequency signal, a bias (bias current or bias voltage) to be supplied to the differential amplifier circuit.
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公开(公告)号：US20210288683A1
公开(公告)日：2021-09-16
申请号：US17195684
申请日：2021-03-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuhito NAKAI , Satoshi GOTO , Hidetaka TAKAHASHI , Daerok OH
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying element; a second amplifying element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying element, another end of the primary coil is connected to an output terminal of the second amplifying element, an end of the secondary coil is connected to an output terminal of the power amplifier, the first amplifying element and the second amplifying element are disposed on the first principal surface, and the first circuit component is disposed on the second principal surface.
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公开(公告)号：US20210273611A1
公开(公告)日：2021-09-02
申请号：US17323505
申请日：2021-05-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi TANAKA , Satoshi ARAYASHIKI , Satoshi GOTO , Yusuke TANAKA
Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.
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公开(公告)号：US20210111743A1
公开(公告)日：2021-04-15
申请号：US17066492
申请日：2020-10-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shigeru TSUCHIDA , Daerok OH , Takahiro KATAMATA , Satoshi GOTO , Mitsunori SAMATA , Yoshiki YASUTOMO
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.
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Patent Agency Ranking
公开(公告)号：US20200169232A1
公开(公告)日：2020-05-28
申请号：US16694025
申请日：2019-11-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Hideyuki SATOU , Satoshi TANAKA
Abstract: A power amplifying circuit includes an amplifier that amplifies a radio-frequency signal and a bypass capacitor section connected to a power supply terminal for supplying a power supply voltage to the amplifier. The bypass capacitor section includes a first capacitor, a second capacitor, and a first switch circuit. The first capacitor includes a first end connected to a power supply path, and a second end. The second capacitor includes a first end connected to the second end of the first capacitor and a second end connected to ground. The first switch circuit includes a first terminal connected to the second end of the first capacitor and the first end of the second capacitor, and a second terminal connected to the ground. The first switch circuit switches between connection and non-connection between the second end of the first capacitor and the ground.
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公开(公告)号：US20200021255A1
公开(公告)日：2020-01-16
申请号：US16440719
申请日：2019-06-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO
IPC: H03F3/213 , H01L27/06 , H03F3/21 , H01L27/02 , H01L23/00 , H01L29/737 , H01L29/417
Abstract: A semiconductor device includes a semiconductor substrate including a principal surface parallel to a plane defined by a first direction and a second direction substantially orthogonal to the first direction, and the principal surface having a first side parallel to the first direction; first unit transistors, each amplifying a first signal in a first frequency band to output a second signal; and second unit transistors, each amplifying the second signal to output a third signal and aligned in the second direction between the first side and a substrate center line in the first direction in plan view of the principal surface. A first center line in the first direction of a region in which the first unit transistors are aligned is farther from the first side than a second center line in the first direction of a region in which the second unit transistors are aligned.
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公开(公告)号：US20250105798A1
公开(公告)日：2025-03-27
申请号：US18975469
申请日：2024-12-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Masao KONDO , Kenji SASAKI , Shinnosuke TAKAHASHI
Abstract: A clamping circuit is connected between a ground potential and a node through which a radio frequency signal passes. The clamping circuit includes multiple clamping elements that are cascaded. Each of the multiple clamping elements becomes conductive when a voltage greater than or equal to a forward voltage is applied thereto. At least one of the multiple clamping elements is implemented by a resistor-connected transistor that includes a bipolar transistor and a base-collector resistance element connected between the base and the collector of the bipolar transistor.
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公开(公告)号：US20240313724A1
公开(公告)日：2024-09-19
申请号：US18671143
申请日：2024-05-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masao KONDO , Takayuki TSUTSUI , Satoshi GOTO
CPC classification number: H03F3/45475 , H01P5/12 , H03F2200/06
Abstract: A first differential amplifier circuit is in or on a substrate and includes a pair of differential input nodes to which differential signals are input and a pair of differential output nodes from which differential signals are output. Ends of a secondary coil of a first transformer are connected to the pair of differential input nodes of the first differential amplifier circuit, and an intermediate point of the secondary coil is AC grounded. Ends of a primary coil of a second transformer are connected to the pair of differential output nodes of the first differential amplifier circuit, and an intermediate point of the primary coil of the second transformer is AC grounded. A differential wire pair connects the ends of the secondary coil of the first transformer to the pair of differential input nodes of the first differential amplifier circuit.
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公开(公告)号：US20230282620A1
公开(公告)日：2023-09-07
申请号：US18315855
申请日：2023-05-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Yutaka SASAKI , Masayuki AOIKE
IPC: H01L25/065
CPC classification number: H01L25/0657 , H01L2225/06589 , H01L2225/06517
Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.
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