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    Micro piezoresistive pressure sensor and manufacturing method thereof
    1.
    发明授权
    Micro piezoresistive pressure sensor and manufacturing method thereof 有权
    微压阻式压力传感器及其制造方法

    公开(公告)号：US08261617B2

    公开(公告)日：2012-09-11

    申请号：US12745745

    申请日：2008-04-21

    申请人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    发明人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    IPC分类号： G01L9/06 ,  B23P17/04

    CPC分类号： G01L9/0042 ,  Y10T29/42 ,  Y10T29/49

    摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

    摘要翻译： 提供一种微型半导体型压力传感器及其制造方法。 微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜 在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔 在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

    BIDIRECTIONAL READOUT CIRCUIT FOR DETECTING DIRECTION AND AMPLITUDE OF CAPACITIVE MEMS ACCELEROMETERS
    2.
    发明申请
    BIDIRECTIONAL READOUT CIRCUIT FOR DETECTING DIRECTION AND AMPLITUDE OF CAPACITIVE MEMS ACCELEROMETERS 有权
    用于检测电容式MEMS加速度计的方向和幅度的双向读出电路

    公开(公告)号：US20090056448A1

    公开(公告)日：2009-03-05

    申请号：US12168025

    申请日：2008-07-03

    申请人： Sung Sik LEE ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik LEE ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P13/04

    摘要： There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.

    摘要翻译： 提供了一种用于检测在电容式微机电系统（MEMS）加速度计处感测的振荡的方向和振幅的双向读出电路，双向读出电路通过使用高分辨率电容 - 电容将电容式MEMS加速度计的电容变化转换为时变量 时间转换技术，并且通过使用时间 - 数字转换（TDC）技术输出时间变化量作为振荡的方向和振幅，从而不仅检测振荡的振幅，而且检测其方向，这是能够 被应用于各种MEMS传感器。

    Bidirectional readout circuit for detecting direction and amplitude of capacitive MEMS accelerometers
    3.
    发明授权
    Bidirectional readout circuit for detecting direction and amplitude of capacitive MEMS accelerometers 有权
    用于检测电容MEMS加速度计的方向和振幅的双向读出电路

    公开(公告)号：US07997137B2

    公开(公告)日：2011-08-16

    申请号：US12168025

    申请日：2008-07-03

    申请人： Sung Sik Lee ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik Lee ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01P15/08

    CPC分类号： G01P15/125 ,  G01P13/04

    摘要： There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.

    摘要翻译： 提供了一种用于检测在电容式微机电系统（MEMS）加速度计处感测的振荡的方向和振幅的双向读出电路，双向读出电路通过使用高分辨率电容 - 电容将电容式MEMS加速度计的电容变化转换为时变量 时间转换技术，并且通过使用时间 - 数字转换（TDC）技术输出时间变化量作为振荡的方向和振幅，从而不仅检测振荡的振幅，而且检测其方向，这是能够 被应用于各种MEMS传感器。

    MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    微型PIEZORESISTIVE压力传感器及其制造方法

    公开(公告)号：US20100251826A1

    公开(公告)日：2010-10-07

    申请号：US12745745

    申请日：2008-04-21

    申请人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    发明人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    IPC分类号： G01L9/06 ,  H01L41/22

    CPC分类号： G01L9/0042 ,  Y10T29/42 ,  Y10T29/49

    摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

    摘要翻译： 提供一种微型半导体型压力传感器及其制造方法。 微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜 在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔 在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

    CIRCUIT FOR CALCULATING A THREE-DIMENSIONAL INCLINATION ANGLE
    8.
    发明申请
    CIRCUIT FOR CALCULATING A THREE-DIMENSIONAL INCLINATION ANGLE 有权
    用于计算三维内插角的电路

    公开(公告)号：US20110192040A1

    公开(公告)日：2011-08-11

    申请号：US12672997

    申请日：2008-04-15

    申请人： Sung Sik Lee ,  Myung Lae Lee ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik Lee ,  Myung Lae Lee ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01C9/06

    CPC分类号： G01C9/00 ,  G01C9/06

    摘要： A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.

    摘要翻译： 提供三维倾斜角计算电路。 三维倾斜角计算电路包括：根据测量平面的三维位置改变X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴振动传感器 分别相对于参考平面; 获取对应于X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴位置值的X轴，Y轴和Z轴位置值获取单元， 分别; 以及倾斜角计算单元，其基于X轴，Y轴和Z轴位置值计算测量平面相对于参考平面的倾斜角度。 因此，通过使用现有的振动传感器，可以非常容易地计算出被测量装置的三维位置的倾斜角度。

    Circuit for calculating a three-dimensional inclination angle
    9.
    发明授权
    Circuit for calculating a three-dimensional inclination angle 有权
    用于计算三维倾斜角的电路

    公开(公告)号：US08359758B2

    公开(公告)日：2013-01-29

    申请号：US12672997

    申请日：2008-04-15

    申请人： Sung Sik Lee ,  Myung Lae Lee ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik Lee ,  Myung Lae Lee ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01C9/00

    CPC分类号： G01C9/00 ,  G01C9/06

    摘要： A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.

    摘要翻译： 提供三维倾斜角计算电路。 三维倾斜角计算电路包括：根据测量平面的三维位置改变X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴振动传感器 分别相对于参考平面; 获取对应于X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴位置值的X轴，Y轴和Z轴位置值获取单元， 分别; 以及倾斜角计算单元，其基于X轴，Y轴和Z轴位置值计算测量平面相对于参考平面的倾斜角度。 因此，通过使用现有的振动传感器，可以非常容易地计算出被测量装置的三维位置的倾斜角度。

    METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE
    10.
    发明申请
    METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE 失效
    微观结构的制作方法

    公开(公告)号：US20100009514A1

    公开(公告)日：2010-01-14

    申请号：US12417114

    申请日：2009-04-02

    申请人： Myung Lae LEE ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

    发明人： Myung Lae LEE ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

    IPC分类号： H01L21/306

    CPC分类号： B81C1/00619 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133

    摘要： A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

    摘要翻译： 提供一种制造微垂直结构的方法。 该方法包括通过插入绝缘层图案和空腔将第二晶体硅（Si）衬底接合到第一晶体Si衬底上，使用沿[111]晶体的深反应离子蚀刻（DRIE）工艺蚀刻第二晶体Si衬底 垂直于第二晶体Si衬底，并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面，以改善蚀刻垂直表面的表面粗糙度和平坦度。 结果，蚀刻的垂直表面上没有形成形态缺陷。 此外，由于绝缘层图案，在蚀刻终点处不发生基脚。 此外，微垂直结构不会浮在空气中，而是固定在第一晶体Si衬底上，从而有助于后续工艺。