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12 条记录 (耗时 0.031 秒)

    BIDIRECTIONAL READOUT CIRCUIT FOR DETECTING DIRECTION AND AMPLITUDE OF CAPACITIVE MEMS ACCELEROMETERS
    1.
    发明申请
    BIDIRECTIONAL READOUT CIRCUIT FOR DETECTING DIRECTION AND AMPLITUDE OF CAPACITIVE MEMS ACCELEROMETERS 有权
    用于检测电容式MEMS加速度计的方向和幅度的双向读出电路

    公开(公告)号：US20090056448A1

    公开(公告)日：2009-03-05

    申请号：US12168025

    申请日：2008-07-03

    申请人： Sung Sik LEE ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik LEE ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P13/04

    摘要： There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.

    摘要翻译： 提供了一种用于检测在电容式微机电系统（MEMS）加速度计处感测的振荡的方向和振幅的双向读出电路，双向读出电路通过使用高分辨率电容 - 电容将电容式MEMS加速度计的电容变化转换为时变量 时间转换技术，并且通过使用时间 - 数字转换（TDC）技术输出时间变化量作为振荡的方向和振幅，从而不仅检测振荡的振幅，而且检测其方向，这是能够 被应用于各种MEMS传感器。

    Bidirectional readout circuit for detecting direction and amplitude of capacitive MEMS accelerometers
    2.
    发明授权
    Bidirectional readout circuit for detecting direction and amplitude of capacitive MEMS accelerometers 有权
    用于检测电容MEMS加速度计的方向和振幅的双向读出电路

    公开(公告)号：US07997137B2

    公开(公告)日：2011-08-16

    申请号：US12168025

    申请日：2008-07-03

    申请人： Sung Sik Lee ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik Lee ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01P15/08

    CPC分类号： G01P15/125 ,  G01P13/04

    摘要： There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.

    摘要翻译： 提供了一种用于检测在电容式微机电系统（MEMS）加速度计处感测的振荡的方向和振幅的双向读出电路，双向读出电路通过使用高分辨率电容 - 电容将电容式MEMS加速度计的电容变化转换为时变量 时间转换技术，并且通过使用时间 - 数字转换（TDC）技术输出时间变化量作为振荡的方向和振幅，从而不仅检测振荡的振幅，而且检测其方向，这是能够 被应用于各种MEMS传感器。

    Micro piezoresistive pressure sensor and manufacturing method thereof
    3.
    发明授权
    Micro piezoresistive pressure sensor and manufacturing method thereof 有权
    微压阻式压力传感器及其制造方法

    公开(公告)号：US08261617B2

    公开(公告)日：2012-09-11

    申请号：US12745745

    申请日：2008-04-21

    申请人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    发明人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    IPC分类号： G01L9/06 ,  B23P17/04

    CPC分类号： G01L9/0042 ,  Y10T29/42 ,  Y10T29/49

    摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

    摘要翻译： 提供一种微型半导体型压力传感器及其制造方法。 微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜 在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔 在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

    MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    微型PIEZORESISTIVE压力传感器及其制造方法

    公开(公告)号：US20100251826A1

    公开(公告)日：2010-10-07

    申请号：US12745745

    申请日：2008-04-21

    申请人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    发明人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    IPC分类号： G01L9/06 ,  H01L41/22

    CPC分类号： G01L9/0042 ,  Y10T29/42 ,  Y10T29/49

    摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

    摘要翻译： 提供一种微型半导体型压力传感器及其制造方法。 微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜 在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔 在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

    Piezolectric micro electro-mechanical system switch, array of the switches, and method of fabricating the same
    9.
    发明授权
    Piezolectric micro electro-mechanical system switch, array of the switches, and method of fabricating the same 失效
    压电微电子机械系统开关，开关阵列及其制造方法

    公开(公告)号：US07679186B2

    公开(公告)日：2010-03-16

    申请号：US11634627

    申请日：2006-12-06

    申请人： Sung Hae Jung ,  Myung Lae Lee ,  Sung Weon Kang

    发明人： Sung Hae Jung ,  Myung Lae Lee ,  Sung Weon Kang

    IPC分类号： H01L23/48

    CPC分类号： H01H57/00 ,  H01H2057/006 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A piezoelectric micro electro-mechanical system switch (MEMS), an array of piezoelectric MEMS switches, and a method of fabricating the switch, which are capable of improving low voltage and switching characteristics while securing high signal isolation, are provided. The piezoelectric MEMS switch includes a semiconductor substrate including a groove, a support formed over the semiconductor substrate and the groove. An actuator including a piezoelectric layer is formed on the support. A switching member is formed on the support on one side of the actuator, wherein upward movement of the switching member changes by a deformation of the piezoelectric layer of the actuator. Radio frequency (RF) transfer lines are arranged at a predetermined distance on the switching member and are separated by a predetermined interval from each other. The actuator is formed to have at least two cantilevers each having one end such that the ends are connected to each other.

    摘要翻译： 提供压电微机电系统开关（MEMS），压电MEMS开关阵列，以及制造开关的方法，其能够在确保高信号隔离的同时提高低电压和开关特性。 压电MEMS开关包括半导体衬底，其包括凹槽，形成在半导体衬底上的支撑件和凹槽。 包括压电层的致动器形成在支撑件上。 切换构件形成在致动器的一侧上的支撑件上，其中切换构件的向上运动通过致动器的压电层的变形而改变。 射频（RF）传输线被布置在切换部件上的预定距离处并以彼此间隔预定间隔分开。 致动器形成为具有至少两个悬臂，每个悬臂具有一端，使得端部彼此连接。