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    STRUCTURE, LAMINATED BODY THEREOF, AND MANUFACTURING METHOD AND MANUFACTURING DEVICE THEREOF
    3.
    发明申请
    STRUCTURE, LAMINATED BODY THEREOF, AND MANUFACTURING METHOD AND MANUFACTURING DEVICE THEREOF 审中-公开

    公开(公告)号：US20200157690A1

    公开(公告)日：2020-05-21

    申请号：US16751941

    申请日：2020-01-24

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Kentaro Shinoda ,  Takanori Saeki ,  Masakazu Mori ,  Jun Akedo

    IPC: C23C24/04 ,  C23C4/134 ,  C23C4/01

    Abstract: A problem to be solved by the present invention is that there is no method for forming a dense structure on a porous structure at low cost. In addition, another object is to provide a high quality and inexpensive structure of a brittle material and a laminate thereof as an intermediate layer for facilitating formation of a dense structure on a porous structure. A structure is provided having a brittle particle assembly having a plurality of brittle particles, wherein the brittle particle assemblies are arranged adjacently to each other, and the brittle particles having a brittle material region in the periphery are crosslinked (connected) by the brittle material region to bond the brittle particles to each other, and thereby form a brittle material crosslinked structure region preventing the mobility of the brittle particles.

    Vanadium oxide film and process for producing same
    4.
    发明授权
    Vanadium oxide film and process for producing same 有权

    公开(公告)号：US10745289B2

    公开(公告)日：2020-08-18

    申请号：US15520339

    申请日：2015-10-26

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Tetsuo Tsuchiya ,  Haruo Ishizaki ,  Tomohiko Nakajima ,  Kentaro Shinoda

    IPC: C01G31/02 ,  C01G31/00 ,  C01G53/00 ,  C01G49/00 ,  H01L21/02 ,  G01J5/00

    Abstract: Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.

    INORGANIC MATERIAL PASTE FOR ELECTRONIC COMPONENTS SUCH AS RESISTORS AND DIELECTRICS, AND METHOD OF PRODUCING SAME
    5.
    发明申请
    INORGANIC MATERIAL PASTE FOR ELECTRONIC COMPONENTS SUCH AS RESISTORS AND DIELECTRICS, AND METHOD OF PRODUCING SAME 审中-公开
    用于电子元件的无机材料如电阻和电介质及其制造方法

    公开(公告)号：US20150371725A1

    公开(公告)日：2015-12-24

    申请号：US14765015

    申请日：2014-01-29

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Tetsuo Tsuchiya ,  Kentaro Shinoda ,  Tomohiko Nakajima

    IPC: H01B1/02

    CPC classification number: H01B1/02 ,  H01B1/08 ,  H01B3/002 ,  H01C7/003 ,  H01C7/006 ,  H01C17/00 ,  H01C17/30 ,  H01G4/06 ,  H01M2/00 ,  H01M2/0277 ,  H01M2/1646

    Abstract: An inorganic material paste obtained by mixing an organometallic compound, inorganic material particles, and a solvent. Additionally provided is an inorganic material paste obtained by mixing inorganic material particles, which are obtained by subjecting an organometallic compound to calcination or light irradiation, and a solvent. The foregoing inorganic material paste can reduce the amount of glass material, reduce the film thickness because the volume density of the functional material is high, yield favorable production efficiency, and achieve cost reduction since it is suitable for mass production. For instance, upon producing a thin film resistor, the resistor obtained by using the paste of the present invention is characterized in having superior stability even in the form of a thin film, and having minimal change in the resistance value caused by self-heating even under a high current. Consequently, this paste is useful in producing thick films of various oxide materials such as fluorescent substances, dielectrics and battery materials, without limitation to resistors.

    Abstract translation: 通过混合有机金属化合物，无机材料颗粒和溶剂获得的无机材料糊料。 另外提供了将通过使有机金属化合物进行煅烧或光照射获得的无机材料颗粒和溶剂混合而获得的无机材料糊料。 上述无机材料糊料可以减少玻璃材料的量，由于功能材料的体积密度高而降低膜厚度，产生有利的生产效率，并且由于适合于批量生产而实现成本降低。 例如，在制造薄膜电阻器时，通过使用本发明的糊料获得的电阻器的特征在于即使以薄膜的形式也具有优异的稳定性，并且由于自加热引起的电阻值的变化甚小 在高电流下。 因此，该糊状物可用于制造各种氧化物材料如荧光物质，电介质和电池材料的厚膜，而不限于电阻器。

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