公开(公告)号：US20170174939A1

公开(公告)日：2017-06-22

申请号：US15129835

申请日：2015-03-20

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

公开(公告)号：US20150083962A1

公开(公告)日：2015-03-26

申请号：US14561188

申请日：2014-12-04

Applicant: NITTA HAAS INCORPORATED ,  SUMCO CORPORATION

Inventor： Masashi TERAMOTO ,  Shinichi OGATA ,  Ryuichi TANIMOTO

IPC: C09G1/04

CPC classification number: C09G1/04 ,  C09G1/02 ,  H01L21/02024 ,  H01L21/30604

Abstract: Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.

Abstract translation: 本发明提供一种抛光组合物，其不包含研磨剂，并且用于研磨硅晶片，所述抛光组合物包括pH缓冲剂，抛光促进剂，水溶性聚合物和嵌段型化合物。 通过使用研磨用组合物研磨硅晶片，可以得到大于0.1μm/分钟的研磨速度。

公开(公告)号：US20170178888A1

公开(公告)日：2017-06-22

申请号：US15129842

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: H01L21/02

CPC classification number: H01L21/02008 ,  H01L21/02024

Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

公开(公告)号：US20170174940A1

公开(公告)日：2017-06-22

申请号：US15129836

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: C09G1/02 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.