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公开(公告)号：US20180312725A1
公开(公告)日：2018-11-01
申请号：US15769934
申请日：2016-10-21
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/00 , B24B37/044 , H01L21/02024 , H01L21/304 , H01L21/30625
摘要： A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.
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公开(公告)号：US20180305580A1
公开(公告)日：2018-10-25
申请号：US15769889
申请日：2016-10-20
摘要： A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.
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公开(公告)号：US20170174939A1
公开(公告)日：2017-06-22
申请号：US15129835
申请日：2015-03-20
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/02024
摘要： Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.
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公开(公告)号：US20170178888A1
公开(公告)日：2017-06-22
申请号：US15129842
申请日：2015-03-30
IPC分类号： H01L21/02
CPC分类号： H01L21/02008 , H01L21/02024
摘要： Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.
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公开(公告)号：US20170174940A1
公开(公告)日：2017-06-22
申请号：US15129836
申请日：2015-03-30
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/02024
摘要： Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.
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