公开(公告)号：US20170174939A1

公开(公告)日：2017-06-22

申请号：US15129835

申请日：2015-03-20

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

公开(公告)号：US20170178888A1

公开(公告)日：2017-06-22

申请号：US15129842

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: H01L21/02

CPC classification number: H01L21/02008 ,  H01L21/02024

Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

公开(公告)号：US20170174940A1

公开(公告)日：2017-06-22

申请号：US15129836

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi TERAMOTO ,  Tatsuya NAKAUCHI ,  Noriaki SUGITA ,  Shinichi HABA ,  Akiko MIYAMOTO

IPC: C09G1/02 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.