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公开(公告)号：US20150009504A1
公开(公告)日：2015-01-08
申请号：US14494981
申请日：2014-09-24
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Moshe FINAROV , Boaz BRILL
Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure
Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统，其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层，结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量，每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明，检测从该结构返回的光的光谱特性，以及产生测量 数据代表。 分析通过第一测量获得的测量数据，从而确定结构的至少一个参数。 然后，利用该确定的参数，同时分析通过第二测量获得的测量数据，使得能够确定结构的轮廓
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2.发明申请公开(公告)号：US20140320837A1
公开(公告)日：2014-10-30
申请号：US14328199
申请日：2014-07-10
Applicant: Nova Measuring Instruments Ltd.
Inventor： Giora DISHON , Moshe FINAROV , Zvi NIREL , Yoel COHEN
IPC: G03F7/20
CPC classification number: G03F7/70058 , G01B11/14 , G01N21/88 , G01N21/9501 , G01N21/956 , G01N2021/8867 , G03F7/3028 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70675 , G03F7/7075 , G03F7/70991 , H01L21/67155
Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.
Abstract translation: 用于根据预定的光刻工艺处理衬底的设备包括其中装载衬底的装载站，其中衬底涂覆有光致抗蚀剂材料的涂覆站，其中光致抗蚀剂涂层通过掩模暴露于光的曝光站 具有预定图案以在光致抗蚀剂涂层上产生掩模的潜像，其中潜像显影的显影站，卸载基板的卸载站和用于相对于预定参数监测基板的监控站 的光刻工艺。
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公开(公告)号：US20160109225A1
公开(公告)日：2016-04-21
申请号：US14935806
申请日：2015-11-09
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Moshe FINAROV , Boaz BRILL
IPC: G01B11/24
Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure
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4.发明申请公开(公告)号：US20130293872A1
公开(公告)日：2013-11-07
申请号：US13936795
申请日：2013-07-08
Applicant: Nova Measuring Instruments Ltd.
Inventor： Giora DISHON , Moshe FINAROV , Zvi NIREL , Yoel COHEN
CPC classification number: G03F7/70058 , G01B11/14 , G01N21/88 , G01N21/9501 , G01N21/956 , G01N2021/8867 , G03F7/3028 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70675 , G03F7/7075 , G03F7/70991 , H01L21/67155
Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.
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Patent Agency Ranking
公开(公告)号：US20130128270A1
公开(公告)日：2013-05-23
申请号：US13747937
申请日：2013-01-23
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Boaz BRILL , Moshe FINAROV , David SCHIENER
IPC: G01B11/27
CPC classification number: G03F7/70633 , G01B11/14 , G01B11/27 , G01N21/4788 , G01N21/9501 , G01N21/956 , H01L22/12
Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
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公开(公告)号：US20180031983A1
公开(公告)日：2018-02-01
申请号：US15728744
申请日：2017-10-10
Applicant: Nova Measuring Instruments Ltd.
Inventor： Boaz BRILL , Moshe FINAROV , David SCHEINER
Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
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公开(公告)号：US20160327384A1
公开(公告)日：2016-11-10
申请号：US15093242
申请日：2016-04-07
Applicant: Nova Measuring Instruments Ltd.
Inventor： Boaz BRILL , Moshe FINAROV , David SCHIENER
IPC: G01B11/27 , G01N21/95 , G01N21/956 , G01N21/47
CPC classification number: G03F7/70633 , G01B11/14 , G01B11/27 , G01N21/4788 , G01N21/9501 , G01N21/956 , H01L22/12
Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
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公开(公告)号：US20150124255A1
公开(公告)日：2015-05-07
申请号：US14594627
申请日：2015-01-12
Applicant: Nova Measuring Instruments Ltd.
Inventor： Boaz BRILL , Moshe FINAROV , David SCHIENER
IPC: G01B11/27
CPC classification number: G03F7/70633 , G01B11/14 , G01B11/27 , G01N21/4788 , G01N21/9501 , G01N21/956 , H01L22/12
Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
Abstract translation: 通过对样品中的测量部位进行光学测量来控制多层样品的制造期间层的对准。 测量部位包括两个分别位于两个不同层之间的衍射结构。 光学测量包括具有不同入射光偏振态的至少两次测量，每个测量包括照亮测量位置，以便通过另一个照射衍射结构之一。 测量部位的衍射特性表示衍射结构之间的横向偏移。 对入射光的不同极化状态分析检测的衍射特性，以确定层之间现有的横向偏移。
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公开(公告)号：US20140009760A1
公开(公告)日：2014-01-09
申请号：US14021765
申请日：2013-09-09
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor： Moshe FINAROV , Boaz BRILL
IPC: G01N21/21
Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure
Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统，其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层，结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量，每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明，检测从该结构返回的光的光谱特性，以及产生测量 数据代表。 分析通过第一测量获得的测量数据，从而确定结构的至少一个参数。 然后，利用该确定的参数，同时分析通过第二测量获得的测量数据，使得能够确定结构的轮廓
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