公开(公告)号：US20130320400A1

公开(公告)日：2013-12-05

申请号：US13895228

申请日：2013-05-15

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria HURKX ,  Jeroen Antoon CROON ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John SQUE ,  Andreas Bernardus Maria JANSMAN ,  Markus MUELLER ,  Stephan HEIL ,  Tim BOETTCHER

IPC: H01L29/47 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。

公开(公告)号：US20150357456A1

公开(公告)日：2015-12-10

申请号：US14723247

申请日：2015-05-27

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria HURKX ,  Jeroen Antoon CROON ,  Johannes Josephus Theodorus Marinus DONKERS ,  Stephan Bastiaan Simon HEIL ,  Jan SONSKY

IPC: H01L29/778 ,  H01L29/36 ,  H01L29/872 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L29/0649 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41766 ,  H01L29/66143 ,  H01L29/7786 ,  H01L29/872

Abstract: In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them.

Abstract translation: 在示例性实施例中，异质结装置包括衬底，设置在衬底上的多层结构。 所述多层结构具有设置在所述基板顶部的具有第一半导体的第一层; 第二层具有第二半导体设置在第一层的顶部，限定它们之间的界面。 第二半导体与第一半导体不同，使得2D电子气体与界面相邻形成。 第一端子耦合到第一和第二层之间的界面的第一区域，并且第二端子耦合到第一层和第二层之间的界面的第二区域; 导电通道包括具有比第一层的另一区域更高的缺陷密度的第一层的金属或区域。 通道连接第二端子和第一层的区域，使得电荷在它们之间流动。