公开(公告)号：US20130320551A1

公开(公告)日：2013-12-05

申请号：US13890055

申请日：2013-05-08

Applicant: NXP B.V.

Inventor： Tim BOETTCHER ,  Sven WALCZYK ,  Roelf Anco Jacob GROENHUIS ,  Rolf BRENNER ,  Emiel DE BRUIN

IPC: H01L23/00

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05016 ,  H01L2224/05088 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/32105 ,  H01L2224/32113 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/05552

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.

公开(公告)号：US20130320400A1

公开(公告)日：2013-12-05

申请号：US13895228

申请日：2013-05-15

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria HURKX ,  Jeroen Antoon CROON ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John SQUE ,  Andreas Bernardus Maria JANSMAN ,  Markus MUELLER ,  Stephan HEIL ,  Tim BOETTCHER

IPC: H01L29/47 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。

公开(公告)号：US20150140739A1

公开(公告)日：2015-05-21

申请号：US14607587

申请日：2015-01-28

Applicant: NXP B.V.

Inventor： Tim BOETTCHER ,  Sven WALCZYK ,  Roelf Anco Jacob GROENHUIS ,  Rolf BRENNER ,  Emiel DE BRUIN

IPC: H01L21/78 ,  H01L21/56

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05016 ,  H01L2224/05088 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/32105 ,  H01L2224/32113 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/05552

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.

Abstract translation: 公开了一种分立半导体器件封装（100），包括半导体管芯（110），其具有第一表面和与所述第一表面相对的第二表面，所述第二表面承载触点（112）; 所述接触件上的导电体（120）; 横向封装所述导电体的封装材料（130） 以及与焊料帽导电接触的诸如焊料帽，另外的半导体管芯或其组合的封盖构件（140,610），所述焊帽覆盖在封装材料上。 可以在第一表面上设置另外的焊锡帽（150）。 还公开了制造这种分立半导体器件封装的方法。