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Patent Agency Ranking
公开(公告)号：US09391147B2
公开(公告)日：2016-07-12
申请号：US14673201
申请日：2015-03-30
Applicant: NXP B.V.
Inventor： Robert James Pascoe Lander
IPC: H01L29/267 , H01L21/02 , H01L29/20 , H01L21/762
CPC classification number: H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02488 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/02658 , H01L21/7624 , H01L21/76251 , H01L29/2003
Abstract: A substrate arrangement comprising a substrate having a surface configured to receive, by epitaxy, an epitaxial layer of semiconducting material, the substrate comprising a laminate having a handle layer and a seed layer, the seed layer having a crystal orientation arranged to receive the epitaxial layer and the handle layer having a crystal orientation different to the seed layer.
Abstract translation: 一种衬底布置，其包括具有被配置为通过外延接收半导体材料的外延层的表面的衬底，所述衬底包括具有手柄层和籽晶层的层压体，所述籽晶层具有布置成接收外延层的晶体取向 并且手柄层具有与种子层不同的晶体取向。
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2.发明申请公开(公告)号：US20140042563A1
公开(公告)日：2014-02-13
申请号：US13960647
申请日：2013-08-06
Applicant: NXP B.V.
Inventor： Robert James Pascoe Lander
CPC classification number: B81B3/0018 , B81C1/00134 , B81C1/00928 , B81C2201/0133 , B81C2203/0136 , B81C2203/0145
Abstract: An integrated circuit comprising a MEMS (microelectromechanical system) element in a plane of the integrated circuit, the MEMS element being suspended in a cavity over a substrate, said cavity including a first cavity region in said plane spatially separating an edge of the MEMS element from a wall section, said edge being arranged to be displaced relative to the wall section; and a second cavity region in said plane forming part of a fluid path further including the first cavity region, said fluid path defining a first volume; and a third cavity region in said plane defining a second volume in fluid connection with the second cavity region, wherein the maximum width of the second cavity region is larger than the maximum width of the third cavity region, the second and third cavity regions having maximum widths that are larger than the maximum width of the first cavity region.
Abstract translation: 一种集成电路，包括在所述集成电路的平面中的MEMS（微机电系统）元件，所述MEMS元件悬挂在衬底上的空腔中，所述空腔包括在所述平面中的空间上的第一空腔区域，以将所述MEMS元件的边缘与 壁部分，所述边缘被布置成相对于壁部分移位; 以及在所述平面中形成另外包括第一腔区域的流体路径的一部分的第二腔区，所述流体路径限定第一体积; 以及所述平面中的第三空腔区域，其限定与第二腔区域流体连接的第二容积，其中第二腔区域的最大宽度大于第三空腔区域的最大宽度，第二和第三空腔区域具有最大值 宽度大于第一空腔区域的最大宽度。
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3.发明授权公开(公告)号：US08841736B2
公开(公告)日：2014-09-23
申请号：US13960647
申请日：2013-08-06
Applicant: NXP B.V.
Inventor： Robert James Pascoe Lander
CPC classification number: B81B3/0018 , B81C1/00134 , B81C1/00928 , B81C2201/0133 , B81C2203/0136 , B81C2203/0145
Abstract: An integrated circuit comprising a MEMS (microelectromechanical system) element in a plane of the integrated circuit, the MEMS element being suspended in a cavity over a substrate, said cavity including a first cavity region in said plane spatially separating an edge of the MEMS element from a wall section, said edge being arranged to be displaced relative to the wall section; and a second cavity region in said plane forming part of a fluid path further including the first cavity region, said fluid path defining a first volume; and a third cavity region in said plane defining a second volume in fluid connection with the second cavity region, wherein the maximum width of the second cavity region is larger than the maximum width of the third cavity region, the second and third cavity regions having maximum widths that are larger than the maximum width of the first cavity region.
Abstract translation: 一种集成电路，包括在所述集成电路的平面中的MEMS（微机电系统）元件，所述MEMS元件悬挂在衬底上的空腔中，所述空腔包括在所述平面中的空间上的第一空腔区域，以将所述MEMS元件的边缘与 壁部分，所述边缘被布置成相对于壁部分移位; 以及在所述平面中形成另外包括第一腔区域的流体路径的一部分的第二腔区，所述流体路径限定第一体积; 以及所述平面中的第三空腔区域，其限定与第二腔区域流体连接的第二容积，其中第二腔区域的最大宽度大于第三空腔区域的最大宽度，第二和第三空腔区域具有最大值 宽度大于第一空腔区域的最大宽度。
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公开(公告)号：US20140176246A1
公开(公告)日：2014-06-26
申请号：US14034398
申请日：2013-09-23
Applicant: NXP B.V.
IPC: H03B1/00
CPC classification number: H03B1/00 , H03B5/30 , H03B2202/00 , H03H9/00 , H03H9/02338 , H03H9/02433 , H03H9/2452 , H03H2009/02307 , H03H2009/02456 , H03H2009/02496
Abstract: A resonator has a main resonator body and a secondary resonator structure. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended body.
Abstract translation: 谐振器具有主谐振器体和次谐振器结构。 谐振器本体具有谐振器单独的期望的振动模式和寄生振动模式，其中寄生模式包括作为复合体的谐振器体和辅助谐振器结构的振动。 以这种方式，不需要的振动模式被第二悬挂体淬火。
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公开(公告)号：US09318997B2
公开(公告)日：2016-04-19
申请号：US14034398
申请日：2013-09-23
Applicant: NXP B.V.
CPC classification number: H03B1/00 , H03B5/30 , H03B2202/00 , H03H9/00 , H03H9/02338 , H03H9/02433 , H03H9/2452 , H03H2009/02307 , H03H2009/02456 , H03H2009/02496
Abstract: A resonator has a main resonator body and a secondary resonator structure. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended body.
Abstract translation: 谐振器具有主谐振器体和次谐振器结构。 谐振器本体具有谐振器单独的期望的振动模式和寄生振动模式，其中寄生模式包括作为复合体的谐振器体和辅助谐振器结构的振动。 以这种方式，不需要的振动模式被第二悬挂体淬火。
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