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Patent Agency Ranking
公开(公告)号：US20160003923A1
公开(公告)日：2016-01-07
申请号：US14741285
申请日：2015-06-16
Applicant: NXP B.V.
Inventor： Victor Zieren , Olaf Wunnicke , Klaus Reimann
CPC classification number: G01R33/066 , G01R33/0206 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104). On the surface (104) is arranged a central emitter structure (110, 210, 310) formed substantially mirror symmetrical with respect to a symmetry plane (106, 206, 306) that is substantially perpendicular to the surface (104, 204, 304), and a first and a second collector structure (116, 216, 316; 118, 218, 318), each of which is arranged spaced apart from the emitter structure (110, 210, 310) and which are arranged on opposite sides of the symmetry plane (106, 206, 306) so as to be substantially mirror images of each other. The first magnetic field sensor (100) is operated double-sided in that its first collector structure (116) and its emitter structure (110) are externally connected via a first read-out circuitry and its second collector structure (118) and its emitter structure (110) are externally connected via a second read-out circuitry. The second magnetic field sensor (200) is operated single-sided in that its first collector structure (216) and its emitter structure (210) are externally connected via a third read-out circuitry. The third magnetic field sensor (300) is operated single-sided in that its second collector structure (318) and its emitter structure (310) are externally connected via a fourth read-out circuitry.
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公开(公告)号：US08981442B2
公开(公告)日：2015-03-17
申请号：US14108106
申请日：2013-12-16
Applicant: NXP B.V.
Inventor： Victor Zieren , Anco Heringa , Olaf Wunnicke , Jan Slotboom , Robert Hendrikus Margaretha van Veldhoven , Jan Claes
IPC: H01L29/82 , H01L43/02 , G01R33/06 , H01L29/735 , H01L29/861
CPC classification number: H01L43/02 , G01R33/066 , H01L29/735 , H01L29/82 , H01L29/8611
Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.
Abstract translation: 公开了一种半导体磁场传感器，其包括在衬底层顶部的半导体阱。 半导体阱包括第一集电区域和第二集电区域以及放置在第一集电区域和第二集电区域之间的电流发射区域。 半导体阱还包括第一MOS结构，其具有位于第一集电区和电流发射区之间的第一栅极端子和第二MOS结构，具有位于电流发射区和第二电流之间的第二栅极端 收集区域。 在操作中，第一栅极端子和第二栅极端子被偏置以增加第一电流和第二电流的偏转长度。 偏转长度垂直于由半导体磁场传感器的表面限定并平行于磁场的平面。
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公开(公告)号：US20140175528A1
公开(公告)日：2014-06-26
申请号：US14108106
申请日：2013-12-16
Applicant: NXP B.V.
Inventor： Victor Zieren , Anco Heringa , Olaf Wunnicke , Jan Slotboom , Robert Hendrikus Margaretha van Veldhoven , Jan Claes
IPC: H01L43/02
CPC classification number: H01L43/02 , G01R33/066 , H01L29/735 , H01L29/82 , H01L29/8611
Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.
Abstract translation: 公开了一种半导体磁场传感器，其包括在衬底层顶部的半导体阱。 半导体阱包括第一集电区域和第二集电区域以及放置在第一集电区域和第二集电区域之间的电流发射区域。 半导体阱还包括第一MOS结构，其具有位于第一集电区和电流发射区之间的第一栅极端子和第二MOS结构，具有位于电流发射区和第二电流之间的第二栅极端 收集区域。 在操作中，第一栅极端子和第二栅极端子被偏置以增加第一电流和第二电流的偏转长度。 偏转长度垂直于由半导体磁场传感器的表面限定并平行于磁场的平面。
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公开(公告)号：US08680850B2
公开(公告)日：2014-03-25
申请号：US14044264
申请日：2013-10-02
Applicant: NXP B.V.
CPC classification number: G01B7/30 , G01D5/147 , G01R33/0029 , G01R33/0082
Abstract: A magnetoresistive angular sensing method is disclosed. In a first mode, a first dc external magnetic field in a predetermined direction is applied to an angular sensor arrangement in which the external magnetic field dominates over a magnetic field generated by an input device an angular position of which is to be sensed. In a second mode, a second external magnetic field is applied to the angular sensor. Outputs of the angular sensor arrangement in the two modes are processed to determine an angular orientation of the input device with offset voltage compensation.
Abstract translation: 公开了一种磁阻角度感测方法。 在第一模式中，将预定方向的第一直流外部磁场施加到角度传感器装置，其中外部磁场主导在由要被感测的角位置的输入装置产生的磁场上。 在第二模式中，第二外部磁场被施加到角度传感器。 处理两种模式的角度传感器装置的输出，以确定具有偏移电压补偿的输入装置的角度定向。
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公开(公告)号：US09696390B2
公开(公告)日：2017-07-04
申请号：US14741285
申请日：2015-06-16
Applicant: NXP B.V.
Inventor： Victor Zieren , Olaf Wunnicke , Klaus Reimann
CPC classification number: G01R33/066 , G01R33/0206 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104). On the surface (104) is arranged a central emitter structure (110, 210, 310) formed substantially mirror symmetrical with respect to a symmetry plane (106, 206, 306) that is substantially perpendicular to the surface (104, 204, 304), and a first and a second collector structure (116, 216, 316; 118, 218, 318), each of which is arranged spaced apart from the emitter structure (110, 210, 310) and which are arranged on opposite sides of the symmetry plane (106, 206, 306) so as to be substantially mirror images of each other. The first magnetic field sensor (100) is operated double-sided in that its first collector structure (116) and its emitter structure (110) are externally connected via a first read-out circuitry and its second collector structure (118) and its emitter structure (110) are externally connected via a second read-out circuitry. The second magnetic field sensor (200) is operated single-sided in that its first collector structure (216) and its emitter structure (210) are externally connected via a third read-out circuitry. The third magnetic field sensor (300) is operated single-sided in that its second collector structure (318) and its emitter structure (310) are externally connected via a fourth read-out circuitry.
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