公开(公告)号：US20060126694A1

公开(公告)日：2006-06-15

申请号：US11179954

申请日：2005-07-12

申请人： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Jong Hee Kim ,  Hyun Woo Song

发明人： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Jong Hee Kim ,  Hyun Woo Song

IPC分类号： H01S5/00

CPC分类号： H01S5/18316 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377

摘要： Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.

摘要翻译： 提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。 垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层 腔表面发射激光。 在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器 和良好的特点。

公开(公告)号：US06989312B2

公开(公告)日：2006-01-24

申请号：US10800680

申请日：2004-03-16

申请人： Hyun Woo Song ,  Won Seok Han ,  Jong Hee Kim ,  Young Gu Ju ,  O Kyun Kwon ,  Sang Hee Park

发明人： Hyun Woo Song ,  Won Seok Han ,  Jong Hee Kim ,  Young Gu Ju ,  O Kyun Kwon ,  Sang Hee Park

IPC分类号： H01L21/20

CPC分类号： H01S5/18341 ,  H01S5/02461 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18363

摘要： Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.

摘要翻译： 提供一种制造半导体光学器件的方法，该半导体光学器件可以用作反射半导体镜或光学滤波器，其中具有不同蚀刻速率的两种或更多种类型的半导体层被交替堆叠，至少一种类型的半导体层是选择性的 蚀刻以形成气隙结构，并且沉积具有良好传热特性的氧化物或氮化物，从而使气隙被埋入，由此可以有效地实现具有高反射率的半导体反射器或滤光器 这是由于在空气间隙和半导体层中埋入的氧化物或氮化物之间的大的折射率造成的对比度小的周期。

公开(公告)号：US07394104B2

公开(公告)日：2008-07-01

申请号：US11698418

申请日：2007-01-25

申请人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

发明人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18347 ,  H01S5/3095 ,  H01S2301/176

摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

摘要翻译： 提供了具有限流结构的半导体光学器件。 该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层， 第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。 第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。 构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者 他们。 具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。

公开(公告)号：US07230276B2

公开(公告)日：2007-06-12

申请号：US10699127

申请日：2003-10-30

申请人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

发明人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18347 ,  H01S5/3095 ,  H01S2301/176

摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

公开(公告)号：US07244923B2

公开(公告)日：2007-07-17

申请号：US11232661

申请日：2005-09-21

申请人： Hyun Woo Song ,  Jong Hee Kim ,  Yong Sung Eom

发明人： Hyun Woo Song ,  Jong Hee Kim ,  Yong Sung Eom

IPC分类号： H01L31/00

CPC分类号： H01S5/18341 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/18305 ,  H01S5/18369 ,  H01S5/423

摘要： Provided are a surface emitting laser device having an optical sensor, and an optical waveguide device employing the same. The surface emitting laser device having an optical sensor includes a surface emitting laser formed on a substrate and generating a laser beam to output it to outside, and an optical sensor formed adjacent to the surface emitting laser on the substrate and receiving external light. In the surface emitting laser device having the optical sensor, and the optical waveguide device employing the same, the surface emitting laser and the optical sensor are simultaneously integrated, however, the performance of the surface emitting laser is unaffected by the optical sensor and the optical sensor operates separately, exhibits high performance, and can respond within a wide wavelength band.

摘要翻译： 提供一种具有光学传感器的表面发射激光器件和使用该传感器的光波导器件。 具有光学传感器的表面发射激光器件包括形成在衬底上的表面发射激光器，并产生激光束以将其输出到外部;以及光学传感器，其形成在衬底上与表面发射激光相邻并接收外部光。 在具有光学传感器的表面发射激光器件和采用该光学传感器的光波导器件中，表面发射激光器和光学传感器被同时集成，然而，表面发射激光器的性能不受光学传感器和光学器件的影响 传感器分开操作，表现出高性能，并可在宽波段范围内作出响应。

公开(公告)号：US08101536B2

公开(公告)日：2012-01-24

申请号：US12516295

申请日：2007-11-22

申请人： Hyo Tae Kim ,  Jong Hee Kim ,  Myung Hwa Nam

发明人： Hyo Tae Kim ,  Jong Hee Kim ,  Myung Hwa Nam

IPC分类号： C04B35/453 ,  C04B35/457 ,  C04B35/465 ,  C04B35/486

CPC分类号： C04B35/01 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/656 ,  C04B2235/767 ,  C04B2235/80 ,  H05K1/0306

摘要： A glass-free microwave dielectric ceramic that can be sintered at low temperature is provided. The glass-free microwave dielectric ceramic composition includes (M1-x2+M′x2+)N4+B2O6 (wherein M and M′ are different each other, each being one among Ba, Ca and Sr; N is one among Sn, Zr and Ti; and 0

摘要翻译： 提供可在低温下烧结的无玻璃微波介电陶瓷。 无玻璃微波介电陶瓷组合物包括（M1-x2 + M'x2 +）N4 + B2O6（其中M和M'彼此不同，各自为Ba，Ca和Sr中的一种; N为Sn，Zr和 Ti和0

公开(公告)号：US06790801B2

公开(公告)日：2004-09-14

申请号：US10326971

申请日：2002-12-24

申请人： Young Min Kim ,  Jong Hee Kim ,  Dong Sook Shin ,  Young Tae Moon

发明人： Young Min Kim ,  Jong Hee Kim ,  Dong Sook Shin ,  Young Tae Moon

IPC分类号： C04B3549

CPC分类号： C04B35/49 ,  B32B18/00 ,  B32B2311/22 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3267 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/652 ,  C04B2235/6584 ,  C04B2235/786 ,  C04B2237/405 ,  C04B2237/704 ,  H01G4/1245

摘要： Disclosed is a nonreducible dielectric composition. Provided is a highly reliable TC based dielectric composition prepared by adding a sintering additive having excellent qualities to a conventional (Ca1-xSrx)m(Zr1-yTiy)O3 based dielectric composition, so that it can be sintered under a reducing atmosphere to be used in formation of a nickel electrode, can be sintered at a low temperature of less than 1,250° C., and has a small dielectric loss and a high resistivity. The composition of the present invention includes a nonreducible dielectric composition comprising a main component expressed by the general formula, (Ca1-xSrx)m(Zr1-yTiy)O3, which has the ranges of 0≦x≦1, 0.09≦y≦0.35, and 0.7≦m≦1.05; and 0.5-10 wt % of a minor component expressed by the general formula, aMnO-bSiO2-dR1O-eR2O2 (a+b+d+e=100, R1 is at least one element selected from the group consisting of Mg, Ca, Sr and Ba, and R2 is at least one element of Zr and Ti), which has the ranges of 20≦a≦60, 10≦b≦65, and 0≦(d+e)≦65.

摘要翻译： 公开了不可还原的电介质组合物。 提供了通过向常规（Ca1-xSrx）m（Zr1-yTiy）O3系电介质组合物添加具有优良品质的烧结添加剂而制备的高度可靠的TC基介电组合物，使得其可以在还原气氛下烧结以使用 在镍电极的形成中，可以在小于1250℃的低温下烧结，并且具有小的介电损耗和高电阻率。 本发明的组合物包括不可还原电介质组合物，其包含由通式表示的主要组分（Ca1-xSrx）m（Zr1-yTiO）O3，其范围为0≤x≤1,0.09< y <= 0.35，0.7 <= m <= 1.05; 和由通式aMnO-bSiO2-dR1O-eR2O2（a + b + d + e = 100表示​​）的次要组分的0.5-10重量％，R1是选自Mg，Ca， Sr和Ba，R2是至少一种Zr和Ti的元素），其范围为20 <= a <= 60，10 <= b <= 65，0 <=（d + e）= 65 。

公开(公告)号：US06387835B2

公开(公告)日：2002-05-14

申请号：US09821770

申请日：2001-03-30

申请人： Jong Hee Kim ,  Shigehiro Fujino ,  Nobutake Hirai

发明人： Jong Hee Kim ,  Shigehiro Fujino ,  Nobutake Hirai

IPC分类号： C04B3548

CPC分类号： C04B35/49 ,  B32B18/00 ,  C04B2235/6562 ,  C04B2237/066 ,  C04B2237/068 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/345 ,  C04B2237/346 ,  C04B2237/348 ,  C04B2237/565 ,  C04B2237/68

摘要： The dielectric ceramic composition according to present invention, is characterized in comprising a component of formula SrxCa1−x(ZryTi1−y)03 (where 0.7≦x≦1; 0.9≦y≦1) to which MnO2 of 0.05-20 wt %, at least one of 0.001-5 wt % selected from tie group consisting of Bi2O3, PbO and Sb2O3 and a glass component of 0.5-10 wt % are added based on the weight of the main component.

摘要翻译： 根据本发明的电介质陶瓷组合物的特征在于包含其中MnO 2为0.05〜3.0的式Sr x Ca 1-x（ZryTi 1-y）O 3（其中0.7 <= x <= 1; 0.9 <= y <= 1） 基于主成分的重量，添加选自Bi 2 O 3，PbO和Sb 2 O 3的组合中的0.001-5重量％和0.5〜10重量％的玻璃成分中的至少一种。

公开(公告)号：US20140092078A1

公开(公告)日：2014-04-03

申请号：US13924221

申请日：2013-06-21

申请人： Soo-Wan Yoon ,  Yeong-Keun Kwon ,  Ji-Sun Kim ,  Jong Hee Kim ,  Young Wan Seo ,  Jae Keun Lim

发明人： Soo-Wan Yoon ,  Yeong-Keun Kwon ,  Ji-Sun Kim ,  Jong Hee Kim ,  Young Wan Seo ,  Jae Keun Lim

IPC分类号： G09G5/00

CPC分类号： G09G3/3677 ,  G09G3/3266 ,  G09G3/3696 ,  G09G5/001 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2320/0214 ,  G11C19/28

摘要： A display device includes a display area including a gate line and a data line and a gate driver connected to an end of the gate line, the gate driver including at least one stages integrated on a substrate configured to output a gate voltage, in which the stage includes an inverter unit and an output unit, in which the output unit includes a first transistor and a first capacitor. The first transistor includes an input terminal applied with a clock signal, a control terminal connected to the node Q, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output. An inverter voltage output from the inverter is lower than the low voltage of the gate voltage output by the output unit.

摘要翻译： 显示装置包括包括栅极线和数据线的显示区域和连接到栅极线的端部的栅极驱动器，栅极驱动器包括集成在被配置为输出栅极电压的衬底上的至少一个级，其中， 该级包括逆变器单元和输出单元，其中输出单元包括第一晶体管和第一电容器。 第一晶体管包括施加有时钟信号的输入端子，连接到节点Q的控制端子以及连接到输出栅极电压的栅极电压输出端子的输出端子。 逆变器输出的逆变器电压低于输出单元输出的栅极电压的低电压。

公开(公告)号：US08632924B2

公开(公告)日：2014-01-21

申请号：US12923909

申请日：2010-10-13

申请人： Hyo Soon Shin ,  Dong-Hun Yeo ,  Youn-Woo Hong ,  Jong Hee Kim ,  Sang Ok Yoon

发明人： Hyo Soon Shin ,  Dong-Hun Yeo ,  Youn-Woo Hong ,  Jong Hee Kim ,  Sang Ok Yoon

IPC分类号： H01M8/10 ,  H01M8/00

CPC分类号： H01M8/2404 ,  H01M4/8626 ,  H01M4/881 ,  H01M4/8882 ,  H01M8/0247 ,  H01M8/0258 ,  H01M8/026 ,  H01M8/1213 ,  H01M8/124 ,  H01M8/2425 ,  H01M8/2435 ,  H01M2008/1293 ,  Y02P70/56

摘要： Provided are a solid oxide fuel cell and a method of manufacturing the same. The solid oxide fuel cell in which at least one or more unit modules are stacked and integrated with each other includes first and second solid electrolyte layers in which each of the unit modules includes a plurality of fuel electrodes spaced a predetermined distance from each other and each having a strip shape and first and second supports each including a plurality of slits each having the same strip shape as that of each of the fuel electrodes. The first and second solid electrolyte layers overlap with each other on lower and upper sides of the first support so that the fuel electrodes face each other within the slits of the first support, and the second support overlaps with a lower side of the first or second solid electrolyte layer overlapping with the lower side of the first support so that the slits of the second support are disposed perpendicular to the slits of the first support. The slits of the first and second supports define fuel paths and air paths, respectively.

摘要翻译： 提供一种固体氧化物燃料电池及其制造方法。 固体氧化物型燃料电池，其中，至少一个以上的单元组件彼此层叠并一体化，其中，第一固体电解质层和第二固体电解质层，其中，各单元模块具有彼此隔开规定距离的多个燃料电极， 具有带状，并且每个包括多个狭缝的第一和第二支撑，每个狭缝具有与每个燃料电极相同的带状。 第一和第二固体电解质层在第一支撑件的下侧和上侧彼此重叠，使得燃料电极在第一支撑件的狭缝内彼此面对，并且第二支撑件与第一或第二支撑件的下侧重叠 固体电解质层与第一支撑体的下侧重叠，使得第二支撑件的狭缝垂直于第一支撑件的狭缝设置。 第一和第二支撑件的狭缝分别限定燃料路径和空气路径。