公开(公告)号：US20220005974A1

公开(公告)日：2022-01-06

申请号：US17480920

申请日：2021-09-21

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

公开(公告)号：US20230231080A1

公开(公告)日：2023-07-20

申请号：US18186037

申请日：2023-03-17

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/42

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

公开(公告)号：US11631783B2

公开(公告)日：2023-04-18

申请号：US17480920

申请日：2021-09-21

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/40 ,  H01L33/20 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/08

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

公开(公告)号：US12080827B2

公开(公告)日：2024-09-03

申请号：US18186037

申请日：2023-03-17

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38 ,  H01L33/42

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

公开(公告)号：US11164994B2

公开(公告)日：2021-11-02

申请号：US16310787

申请日：2017-06-26

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L33/08

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.