公开(公告)号：US11705370B2

公开(公告)日：2023-07-18

申请号：US17255435

申请日：2019-06-27

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis ,  Markus Broell ,  Robert Walter ,  Franz Eberhard ,  Michael Huber ,  Wolfgang Schmid

IPC: H01L21/78 ,  H01L33/00 ,  H01L23/50 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L21/78 ,  H01L23/50 ,  H01L24/94 ,  H01L31/02002 ,  H01L31/0216 ,  H01L31/186 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/62 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32225 ,  H01L2224/83192 ,  H01L2224/83801

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

公开(公告)号：US20210126163A1

公开(公告)日：2021-04-29

申请号：US16644962

申请日：2018-09-03

Applicant: OSRAM OLED GmbH

Inventor： Michael Huber ,  Jana Sommerfeld ,  Martin Herz ,  Sebastian Hoibl ,  Christian Rumbolz ,  Albrecht Kieslich ,  Bernd Boehm ,  Georg Rossbach ,  Markus Broell

IPC: H01L33/24 ,  H01L33/00

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.

公开(公告)号：US11476389B2

公开(公告)日：2022-10-18

申请号：US16644962

申请日：2018-09-03

Applicant: OSRAM OLED GmbH

Inventor： Michael Huber ,  Jana Sommerfeld ,  Martin Herz ,  Sebastian Hoibl ,  Christian Rumbolz ,  Albrecht Kieslich ,  Bernd Boehm ,  Georg Rossbach ,  Markus Broell

IPC: H01L33/24 ,  H01L33/00

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.

公开(公告)号：US20210265213A1

公开(公告)日：2021-08-26

申请号：US17255435

申请日：2019-06-27

Applicant: OSRAM OLED GmbH

Inventor： Benjamin Michaelis ,  Markus Broell ,  Robert Walter ,  Franz Eberhard ,  Michael Huber ,  Wolfgang Schmid

IPC: H01L21/78 ,  H01L33/44 ,  H01L31/0216 ,  H01L23/50 ,  H01L33/62 ,  H01L31/02 ,  H01L23/00 ,  H01L33/00 ,  H01L31/18

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.