公开(公告)号：US10232471B2

公开(公告)日：2019-03-19

申请号：US15845883

申请日：2017-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf

IPC: H01L23/544 ,  B23K26/53 ,  B23K26/38 ,  B23K26/40 ,  H01L21/268 ,  H01L21/683 ,  H01L21/78 ,  H01L33/00 ,  B23K101/40 ,  B23K103/00

Abstract: The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.

公开(公告)号：US10276748B2

公开(公告)日：2019-04-30

申请号：US15514814

申请日：2015-10-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf ,  Simon Jerebic ,  Ingo Neudecker ,  Guenter Spath ,  Michael Huber ,  Korbinian Perzlmaier

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/20

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

公开(公告)号：US10115869B2

公开(公告)日：2018-10-30

申请号：US15030359

申请日：2014-10-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf ,  Simon Jerebic ,  Ingo Neudecker ,  Guenter Spath ,  Michael Huber

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/20 ,  H01L23/00 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

公开(公告)号：US10090198B2

公开(公告)日：2018-10-02

申请号：US14913681

申请日：2014-08-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf

IPC: H01L21/00 ,  H01L23/544 ,  H01L21/78 ,  B23K26/354 ,  B23K26/53 ,  B23K26/00 ,  H01L21/225 ,  H01L21/24 ,  H01L21/268 ,  H01L23/367 ,  H01L23/373 ,  H01L33/00 ,  H01L31/00 ,  B23K103/00

Abstract: Disclosed is a method for separating a substrate (1) along a separation pattern (4), in which method a substrate (1) is provided and an auxiliary layer (3) is applied to the substrate, said layer covering the substrate at least along the separation pattern. The substrate comprising the auxiliary layer is irradiated, such that the material of the auxiliary layer penetrates the substrate along the separation pattern in the form of an impurity. The substrate is broken along the separation pattern. A semiconductor chip (15) is also disclosed.

公开(公告)号：US09873166B2

公开(公告)日：2018-01-23

申请号：US14911024

申请日：2014-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf

IPC: H01L23/544 ,  B23K26/00 ,  B23K26/38 ,  B23K26/40 ,  H01L21/268 ,  H01L21/683 ,  H01L21/78 ,  H01L33/00 ,  B23K103/00 ,  B23K101/40

CPC classification number: B23K26/53 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327

Abstract: The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.

公开(公告)号：US09728459B2

公开(公告)日：2017-08-08

申请号：US14647071

申请日：2013-11-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf

IPC: H01L21/00 ,  H01L21/78 ,  H01L33/00

CPC classification number: H01L21/78 ,  H01L33/0095 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method for singulating an assemblage (1) into a plurality of semiconductor chips (10) is specified, wherein an assemblage comprising a carrier (4), a semiconductor layer sequence (2) and a metallic layer (3) is provided. Separating trenches (45) are formed in the carrier. The assemblage is subjected to mechanical loading, with the result that the metallic layer breaks along the separating trenches and the assemblage is singulated into semiconductor chips, wherein the singulated semiconductor chips each have part of the semiconductor layer sequence, of the carrier and of the metallic layer. A semiconductor chip (10) is furthermore specified.