Advanced Array Local Clock Buffer Base Block Circuit
    1.
    发明申请
    Advanced Array Local Clock Buffer Base Block Circuit 审中-公开
    高级阵列本地时钟缓冲器基本块电路

    公开(公告)号:US20130091375A1

    公开(公告)日:2013-04-11

    申请号:US13269654

    申请日:2011-10-10

    IPC分类号: G06F1/04 G06F17/50

    摘要: A clock stretcher mechanism is provided for shifting a rising edge of a negative active global clock signal beyond a rising edge of a feedback path signal. A negative active global clock signal and a clock chopper signal are received in a base block. First base block circuitry modifies the clock chopper signal in order to form the feedback path signal. Second base block circuitry shifts the rising edge of the negative active global clock signal beyond the rising edge of the feedback path signal using a delay negative active global clock signal.

    摘要翻译: 提供时钟延伸器机构用于将负有效全局时钟信号的上升沿移动超过反馈路径信号的上升沿。 负的有源全局时钟信号和时钟斩波信号被接收在基本块中。 第一基块电路修改时钟斩波信号以形成反馈路径信号。 第二基块电路使用延迟负有源全局时钟信号将负有源全局时钟信号的上升沿移动到反馈路径信号的上升沿。

    Boost circuit for generating an adjustable boost voltage
    2.
    发明授权
    Boost circuit for generating an adjustable boost voltage 失效
    用于产生可调节升压电压的升压电路

    公开(公告)号:US08493812B2

    公开(公告)日:2013-07-23

    申请号:US12913929

    申请日:2010-10-28

    IPC分类号: G11C8/08

    CPC分类号: G11C5/145

    摘要: A technique for generating an adjustable boost voltage for a device includes charging, using first and second switches, a capacitor to a first voltage during a charging phase. The technique also includes stacking, using a third switch, a second voltage onto the first voltage across the capacitor in a boost phase to generate a boost voltage. In this case, the boost voltage is applied to a driver circuit of the device only during the boost phase and at least one of the first and second voltages is adjustable, thereby making the boost voltage adjustable.

    摘要翻译: 用于产生用于装置的可调升压电压的技术包括在充电阶段期间使用第一和第二开关将电容器充电到第一电压。 该技术还包括使用第三开关将第二电压堆叠在升压阶段的电容器两端的第一电压上以产生升压电压。 在这种情况下,升压电压仅在升压阶段被施加到器件的驱动电路,并且第一和第二电压中的至少一个是可调节的,从而使升压电压可调。

    Power saving by disabling cyclic bitline precharge
    3.
    发明授权
    Power saving by disabling cyclic bitline precharge 有权
    通过禁用循环位线预充电节电

    公开(公告)号:US07295481B2

    公开(公告)日:2007-11-13

    申请号:US10711982

    申请日:2004-10-18

    IPC分类号: G11C7/00

    摘要: A method and system of accessing memory cells within a dynamic hardware memory block operated with a bitline precharge circuit, in which differential read/write access operations are performed by activating complementary bitlines. A reduction in power dissipation is realized by determining whether a next access operation following a current access operation is a read or write access, and performing a precharge of the bitlines of the array only when a read operation follows the current access operation. A conventional precharge control signal is combined with an external control signal indicating if the next cycle is a read cycle. The combination of the two signals can be used, for example, as input to a simple AND gate to generate an effective precharge signal. The effective precharge signal permits precharging of bitlines only when those bitlines are used for read access in a respective next cycle.

    摘要翻译: 一种访问由位线预充电电路操作的动态硬件存储器块内的存储器单元的方法和系统,其中通过激活补充位线执行差分读/写访问操作。 通过确定当前访问操作之后的下一个访问操作是读取还是写入访问,并且仅当读取操作遵循当前访问操作时才执行阵列的位线的预充电来实现功耗的降低。 常规的预充电控制信号与指示下一个周期是否为读周期的外部控制信号组合。 两个信号的组合可以用作例如简单与门的输入以产生有效的预充电信号。 只有当这些位线用于在相应的下一周期中的读取访问时,有效的预充电信号才允许位线预充电。

    Progamable control clock circuit for arrays
    4.
    发明授权
    Progamable control clock circuit for arrays 有权
    阵列控制时钟电路

    公开(公告)号:US07936198B2

    公开(公告)日:2011-05-03

    申请号:US12345758

    申请日:2008-12-30

    IPC分类号: H03K3/00

    CPC分类号: G06F1/04

    摘要: A programmable clock control circuit includes a base block, a chop block, and a pulse width variation block coupled between the chop block and the base block that receives the chop block output and provides a pulse width variation output to the base block. The pulse width variation block is programmable to vary the chop block output to provide at least three different output pulse widths. The circuit also includes a clock delay block coupled an output of the base block to delay the output pulse and having a clock signal output.

    摘要翻译: 可编程时钟控制电路包括:接收斩波块输出的斩波块与基地块之间的基本块,斩波块和脉冲宽度变化块,并向基地块提供脉冲宽度变化输出。 脉冲宽度变化块可编程以改变斩波块输出以提供至少三个不同的输出脉冲宽度。 该电路还包括一个与基本块的输出相连的时钟延迟块,以延迟输出脉冲并具有时钟信号输出。

    PROGAMABLE CONTROL CLOCK CIRCUIT FOR ARRAYS
    5.
    发明申请
    PROGAMABLE CONTROL CLOCK CIRCUIT FOR ARRAYS 有权
    可编程控制时钟电路

    公开(公告)号:US20100164586A1

    公开(公告)日:2010-07-01

    申请号:US12345758

    申请日:2008-12-30

    IPC分类号: H03H11/26

    CPC分类号: G06F1/04

    摘要: A programmable clock control circuit includes a base block, a chop block, and a pulse width variation block coupled between the chop block and the base block that receives the chop block output and provides a pulse width variation output to the base block. The pulse width variation block is programmable to vary the chop block output to provide at least three different output pulse widths. The circuit also includes a clock delay block coupled an output of the base block to delay the output pulse and having a clock signal output.

    摘要翻译: 可编程时钟控制电路包括:接收斩波块输出的斩波块与基地块之间的基本块,斩波块和脉冲宽度变化块,并向基地块提供脉冲宽度变化输出。 脉冲宽度变化块可编程以改变斩波块输出以提供至少三个不同的输出脉冲宽度。 该电路还包括一个与基本块的输出相连的时钟延迟块,以延迟输出脉冲并具有时钟信号输出。

    Low Power Programmable Clock Delay Generator with Integrated Decode Function
    6.
    发明申请
    Low Power Programmable Clock Delay Generator with Integrated Decode Function 失效
    具有集成解码功能的低功耗可编程时钟延迟发生器

    公开(公告)号:US20090267667A1

    公开(公告)日:2009-10-29

    申请号:US12109728

    申请日:2008-04-25

    IPC分类号: H03L7/00

    摘要: A programmable Local Clock Buffer has a single inverter between the clock input and the delayed clock output. A transistor switch modulates the single inverter stage between a clock signal transmit state and a non-transmitting state. A combination of delay select bits control the timing of the beginning and ending of the transmit state of the inverter relative to the clock input via the transistor switch.

    摘要翻译: 可编程本地时钟缓冲器在时钟输入和延迟时钟输出之间具有单个反相器。 晶体管开关在时钟信号发送状态和非发送状态之间调制单个逆变器级。 延迟选择位的组合控制逆变器相对于经由晶体管开关的时钟输入的发送状态的开始和结束的定时。

    Multiple port memory apparatus
    7.
    发明授权
    Multiple port memory apparatus 失效
    多端口存储设备

    公开(公告)号:US06629215B2

    公开(公告)日:2003-09-30

    申请号:US09811916

    申请日:2001-03-19

    IPC分类号: G06F1200

    摘要: In order to provide an improved wiring management approach, a multiple port memory apparatus (200) is proposed, which comprises a first memory field of a first memory array (201) of at least three memory arrays (201, 202, 203) storing first data, wherein the first memory field is identified by a first address, a first memory field of a second memory array (202) of the at least three memory arrays (201, 202, 203) storing second data, wherein the first memory field of the second memory array (202) is also identified by the first address, and a first memory field of a third memory array (203) of the at least three memory arrays (201, 202, 203) storing select data indicating, whether the first data or the second data, each stored under the first address but in different memory arrays, have been lastly written.

    摘要翻译: 为了提供改进的布线管理方法,提出了一种多端口存储装置(200),其包括至少存储有第一存储器阵列(201,202,203)的第一存储器阵列(201)的第一存储器阵列(201,202,203) 数据,其中第一存储器字段由第一地址识别,存储第二数据的至少三个存储器阵列(201,202,203)的第二存储器阵列(202)的第一存储器字段,其中第一存储器字段 所述第二存储器阵列(202)也由所述第一地址标识,并且所述至少三个存储器阵列(201,202,203)中的第三存储器阵列(203)的第一存储器字段存储选择数据,所述选择数据指示所述第一存储器阵列 最后写入数据或第二数据,每个存储在第一地址但不同的存储器阵列中。

    Single-ended read and differential write scheme
    9.
    发明授权
    Single-ended read and differential write scheme 失效
    单端读和差分写入方案

    公开(公告)号:US07813163B2

    公开(公告)日:2010-10-12

    申请号:US12190680

    申请日:2008-08-13

    IPC分类号: G11C11/00

    CPC分类号: G11C11/413

    摘要: A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.

    摘要翻译: 提供了读取和写入至少一个静态存储单元的方法,所述单元包括交叉耦合的反相器对和两个通过器件,其中所述方法的特征在于,在只读选择两个通过器件中的一个的同时, 对于写入,选择了传递设备。 此外,描述了读取和写入至少一个静态存储器单元的电路,所述单元包括交叉耦合的反相器对和两个通过器件。 所述电路的特征在于,对于单元的每个通过器件,单个字线与特定通过器件的栅极连接,其中两个字线被选择用于写入,并且单个字线被选择用于读取。

    Single-ended read and differential write scheme
    10.
    发明申请
    Single-ended read and differential write scheme 失效
    单端读和差分写入方案

    公开(公告)号:US20090059688A1

    公开(公告)日:2009-03-05

    申请号:US12190680

    申请日:2008-08-13

    IPC分类号: G11C7/00 G11C8/08

    CPC分类号: G11C11/413

    摘要: A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.

    摘要翻译: 提供了读取和写入至少一个静态存储单元的方法,所述单元包括交叉耦合的反相器对和两个通过器件,其中所述方法的特征在于,在只读选择两个通过器件中的一个的同时, 对于写入,选择了传递设备。 此外,描述了读取和写入至少一个静态存储器单元的电路,所述单元包括交叉耦合的反相器对和两个通过器件。 所述电路的特征在于,对于单元的每个通过器件,单个字线与特定通过器件的栅极连接,其中两个字线被选择用于写入,并且单个字线被选择用于读取。