公开(公告)号：US06661281B2

公开(公告)日：2003-12-09

申请号：US09995639

申请日：2001-11-29

申请人： Osamu Samuel Nakagawa ,  Norman Chang ,  Shen Lin ,  Weize Xie ,  Xuejue Huang

发明人： Osamu Samuel Nakagawa ,  Norman Chang ,  Shen Lin ,  Weize Xie ,  Xuejue Huang

IPC分类号： H03B100

CPC分类号： H02H9/001 ,  H03K17/16 ,  Y10T307/469

摘要： A method reduces noise resulting from a current surge in a circuit. A plurality of loading elements, parallel with the circuit being protected, are connected sequentially and disconnected. The connection of the loading elements results in a ramping up of current through the circuit without a sudden surge. In a preferred embodiment, an apparatus for slowing a current change in a circuit is described. The apparatus comprises a plurality of loading elements placed in parallel with the circuit, each of the elements providing a path for current flow, and a control circuit for selectively opening or closing at least one of said paths to prevent or enable current flow through the at least one of the paths.

公开(公告)号：US06413802B1

公开(公告)日：2002-07-02

申请号：US09695532

申请日：2000-10-23

申请人： Chenming Hu ,  Tsu-Jae King ,  Vivek Subramanian ,  Leland Chang ,  Xuejue Huang ,  Yang-Kyu Choi ,  Jakub Tadeusz Kedzierski ,  Nick Lindert ,  Jeffrey Bokor ,  Wen-Chin Lee

发明人： Chenming Hu ,  Tsu-Jae King ,  Vivek Subramanian ,  Leland Chang ,  Xuejue Huang ,  Yang-Kyu Choi ,  Jakub Tadeusz Kedzierski ,  Nick Lindert ,  Jeffrey Bokor ,  Wen-Chin Lee

IPC分类号： H01L2100

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/41791 ,  H01L29/66795 ,  H01L2029/7858

摘要： A FinFET device is fabricated using conventional planar MOSFET technology. The device is fabricated in a silicon layer overlying an insulating layer (e.g., SIMOX) with the device extending from the insulating layer as a fin. Double gates are provided over the sides of the channel to provide enhanced drive current and effectively suppress short channel effects. A plurality of channels can be provided between a source and a drain for increased current capacity. In one embodiment two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.

摘要翻译： FinFET器件采用传统的平面MOSFET技术制造。 器件制造在覆盖绝缘层（例如SIMOX）的硅层中，器件从绝缘层延伸为翅片。 在通道的两侧设置双门，以提供增强的驱动电流，并有效抑制短路效应。 可以在源极和漏极之间提供多个通道以增加电流容量。 在一个实施例中，两个晶体管可以堆叠在鳍中以提供具有共享栅极的CMOS晶体管对。