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公开(公告)号：US20160119562A1
公开(公告)日：2016-04-28
申请号：US14876500
申请日：2015-10-06
Inventor： MASAYUKI TAKASE , TAKAYOSHI YAMADA , TOKUHIKO TAMAKI
IPC: H04N5/372 , H04N5/378 , H01L27/146 , H04N5/351
CPC classification number: H01L27/14603 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14667 , H01L27/307 , H04N5/353 , H04N5/378
Abstract: An imaging device, comprising: at least one unit pixel cell; and a voltage application circuit that generates at least two different voltages, each of the at least one unit pixel cell comprising: a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface, a pixel electrode located on the first surface, an auxiliary electrode located on the first surface, the auxiliary electrode being separated from the pixel electrode and electrically connected to the voltage application circuit, an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the auxiliary electrode, a charge storage node electrically connected to the pixel electrode, and a charge detection circuit electrically connected to the charge storage node.
Abstract translation: 一种成像装置，包括：至少一个单位像素单元; 以及电压施加电路，其生成至少两个不同的电压，所述至少一个单位像素单元中的每一个包括：光电转换层，具有第一表面和与所述第一表面相对的一侧的第二表面，位于 位于第一表面上的辅助电极，辅助电极与像素电极分离并电连接到电压施加电路，位于第二表面上的上电极，与像素电极相对的上电极和 辅助电极，电连接到像素电极的电荷存储节点，以及电连接到电荷存储节点的电荷检测电路。
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公开(公告)号：US20170264840A1
公开(公告)日：2017-09-14
申请号：US15446545
申请日：2017-03-01
Inventor： JUNJI HIRASE , YOSHIHIRO SATO , YOSHINORI TAKAMI , MASAYUKI TAKASE , MASASHI MURAKAMI
IPC: H04N5/361 , H04N5/369 , H04N5/3745 , H01L27/146
CPC classification number: H04N5/361 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/359 , H04N5/363 , H04N5/3698 , H04N5/3745
Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.
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公开(公告)号：US20160119563A1
公开(公告)日：2016-04-28
申请号：US14878180
申请日：2015-10-08
Inventor： TAKAYOSHI YAMADA , MASAYUKI TAKASE , TOKUHIKO TAMAKI , MASASHI MURAKAMI
IPC: H04N5/372 , H04N5/359 , H01L27/146 , H04N5/378
CPC classification number: H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. The charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage.
Abstract translation: 成像装置包括至少一个单位像素单元。 它们各自包括：具有第一和第二表面的光电转换层; 位于第一表面上并分离的像素电极和屏蔽电极，屏蔽电压施加到屏蔽电极; 位于所述第二表面上并与所述像素电极和所述屏蔽电极相对的上电极，对电压施加到所述上电极; 电连接到像素电极的电荷累积节点; 以及与电荷累积结点电连接的电荷检测电路。 电荷检测电路包括将像素电极设置在预定定时的初始化电压的复位晶体管。 屏蔽电压和对置电压之间的差的绝对值大于初始化电压和反电压之差的绝对值。
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公开(公告)号：US20150195466A1
公开(公告)日：2015-07-09
申请号：US14666200
申请日：2015-03-23
Inventor： MASAYUKI TAKASE , YOSHIHIRO SATO , JUNJI HIRASE , TOKUHIKO TAMAKI
CPC classification number: H04N5/369 , G02B13/0015 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14665 , H04N5/23212 , H04N5/3696
Abstract: A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions.
Abstract translation: 固态成像装置具有多个成像目的像素和多个焦点检测目的像素。 每个成像目的像素设置有形成在第一下电极上的第一下电极，光电转换膜和形成在光电转换膜上的上电极。 每个焦点检测目的像素设置有第二下部电极，形成在第二下部电极上的光电转换膜和形成在光电转换膜上的上部电极。 第二下部电极的面积小于第一下部电极的面积。 第二下电极设置在偏离对应的焦点检测像素的像素中心的位置，并且与多个焦点检测目的像素中包括的两个焦点检测目的像素相对应的两个第二下部电极被布置在相互相反的方向上。
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Patent Agency Ranking
公开(公告)号：US20210013253A1
公开(公告)日：2021-01-14
申请号：US17028627
申请日：2020-09-22
Inventor： MASAYUKI TAKASE , SHUNSUKE ISONO , YUUKO TOMEKAWA
IPC: H01L27/146
Abstract: An electronic device includes: a capacitor; an insulating layer; at feast one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.
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6.发明申请公开(公告)号：US20190181178A1
公开(公告)日：2019-06-13
申请号：US16174156
申请日：2018-10-29
Inventor： MASAYUKI TAKASE , YUUKO TOMEKAWA , YOSHIHIRO SATO
IPC: H01L27/146 , H04N5/363 , H04N5/3745 , H01L49/02
Abstract: An image capture device includes pixels and a signal line that is arranged across two or more of the pixels. Each pixel includes: a semiconductor substrate, a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a first transistor including first and second impurity regions in the substrate; a wiring layer between the substrate and the second electrode; and a capacitor arranged between the wiring layer and the substrate in a normal direction of the substrate and including a third electrode, a fourth electrode between the third electrode and the substrate, and a dielectric layer. The first impurity region is electrically connected to the second electrode, the fourth electrode is electrically connected to one of the first and second impurity regions, and at least either the third or fourth electrodes covers the first impurity region when viewed along the normal direction.
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公开(公告)号：US20190006543A1
公开(公告)日：2019-01-03
申请号：US16000885
申请日：2018-06-06
Inventor： MASAYUKI TAKASE , SANSHIRO SHISHIDO
IPC: H01L31/0352 , H01L31/101 , H01L27/146
CPC classification number: H01L31/035281 , H01L27/14665 , H01L31/101
Abstract: A photodetection device includes: a photoelectric converter generating charge; a first transfer channel having first and second ends, the first end being connected to the photoelectric converter, charge from the photoelectric converter being transferred from the first end toward the second end; a second transfer channel diverging from the first transfer channel at a first position; a third transfer channel diverging from the first transfer channel at a second position, further than the first position from the first end; a first charge accumulator accumulating charge transferred through the second transfer channel; a second charge accumulator accumulating charge transferred through the third transfer channel; a first gate electrode switching between transfer/cutoff of charge in the first transfer channel; and at least one second gate electrode switching between transfer/cutoff of charge in the second and third transfer channels, the third transfer channel being wider than the second transfer channel.
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公开(公告)号：US20190006542A1
公开(公告)日：2019-01-03
申请号：US16000881
申请日：2018-06-05
Inventor： SANSHIRO SHISHIDO , MASAYUKI TAKASE
IPC: H01L31/0352 , H01L31/101 , H01L27/146
CPC classification number: H01L31/035281 , H01L27/14665 , H01L31/101
Abstract: A photodetection device includes: a photoelectric converter generating charge; a first channel having first and second ends, the first end being connected to the photoelectric converter, charge being transferred from the first end toward the second end; a second channel diverging from the first channel at a first position of the first channel; a third channel diverging from the first channel at a second position of the first channel; a first accumulator accumulating charge transferred from the first channel through the second channel; a second accumulator accumulating charge transferred from the first channel through the third channel; and at least one first gate electrode switching between transfer/cutoff of charge in the second channel, and switching between transfer/cutoff of charge in the third channel, a width of the first channel at the first end being greater than a width of the first channel at the second end in a plan view.
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公开(公告)号：US20150280155A1
公开(公告)日：2015-10-01
申请号：US14668606
申请日：2015-03-25
Inventor： TOKUHIKO TAMAKI , MASAYUKI TAKASE , YASUHIKO ADACHI
CPC classification number: H01L51/441 , H01L27/307 , H01L51/4273 , Y02E10/549
Abstract: A solid-state imaging device according to an aspect of the present disclosure includes pixel including: a first and second electrode located in a same layer, the second electrode being located between the first electrode and the other first electrodes included in adjacent pixels; an organic photoelectric conversion film including a first surface and a second surface, the first surface being in contact with the first electrode and the second electrode; and a counter electrode located on the second surface. The organic photoelectric conversion film extends over the pixels. The first electrode is an electrode through which electrons or holes generated in the organic photoelectric conversion film are extracted. An area ratio of the first electrode to the each pixel is 25% or less. And a total area ratio of a sum of the first electrode and the second electrode to the each pixel is 40% or greater.
Abstract translation: 根据本公开的一个方面的固态成像装置包括像素，包括：位于相同层中的第一和第二电极，第二电极位于第一电极和包括在相邻像素中的其它第一电极之间; 包括第一表面和第二表面的有机光电转换膜，所述第一表面与所述第一电极和所述第二电极接触; 和位于第二表面上的对电极。 有机光电转换膜在像素上延伸。 第一电极是提取在有机光电转换膜中产生的电子或空穴的电极。 第一电极与每个像素的面积比为25％以下。 并且，第一电极和第二电极的总和与各像素的总面积比为40％以上。
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