IMAGING DEVICE
    4.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号:US20230371289A1

    公开(公告)日:2023-11-16

    申请号:US18357110

    申请日:2023-07-22

    CPC classification number: H10K30/353 H10K85/211 H10K85/311 H10K30/86

    Abstract: An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.


    NCH2XCH2N  (1)

    IMAGING APPARATUS
    7.
    发明申请

    公开(公告)号:US20210335889A1

    公开(公告)日:2021-10-28

    申请号:US17231614

    申请日:2021-04-15

    Abstract: An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING APPARATUS

    公开(公告)号:US20230045956A1

    公开(公告)日:2023-02-16

    申请号:US17935607

    申请日:2022-09-27

    Abstract: A photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode and including a donor semiconductor material and an acceptor semiconductor material, and a first charge blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge blocking layer includes a first material and a second material having an energy band gap narrower than that of the first material. The electron affinity of the first material is lower than that of the second material, and the ionization potential of the first material is higher than that of the second material.

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