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1.发明申请PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING INSULATING LAYERS HAVING DIFFERENT STRAINS 有权形成电子装置的方法，包括具有不同应变的绝缘层公开(公告)号：US20110003444A1
公开(公告)日：2011-01-06
申请号：US12883096
申请日：2010-09-15
IPC分类号： H01L21/8238
CPC分类号： H01L27/1203 , H01L21/0214 , H01L21/0217 , H01L21/02266 , H01L21/0228 , H01L21/31105 , H01L21/3143 , H01L21/3185 , H01L21/76264 , H01L21/84 , H01L29/78 , H01L29/7843
摘要： An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.
摘要翻译： 电子设备可以包括场隔离区域和具有第一应变的第一绝缘层，并且具有从顶视图完全位于场隔离区域内的部分。 电子器件还可以包括具有不同于第一应变的第二应变并且包括开口的第二绝缘层。 从顶视图，第一绝缘层的部分可以位于第二绝缘层的开口内。 在一个实施例中，场隔离区域可以包括虚拟结构，并且第一绝缘层的部分可以覆盖虚拟结构。 形成电子器件的过程可以包括形成绝缘层的岛部，其中从顶视图看，岛部完全位于场隔离区内。
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公开(公告)号：US07843011B2
公开(公告)日：2010-11-30
申请号：US11669794
申请日：2007-01-31
IPC分类号： H01L27/092
CPC分类号： H01L27/1203 , H01L21/0214 , H01L21/0217 , H01L21/02266 , H01L21/0228 , H01L21/31105 , H01L21/3143 , H01L21/3185 , H01L21/76264 , H01L21/84 , H01L29/78 , H01L29/7843
摘要： An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.
摘要翻译： 电子设备可以包括场隔离区域和具有第一应变的第一绝缘层，并且具有从顶视图完全位于场隔离区域内的部分。 电子器件还可以包括具有不同于第一应变的第二应变并且包括开口的第二绝缘层。 从顶视图，第一绝缘层的部分可以位于第二绝缘层的开口内。 在一个实施例中，场隔离区域可以包括虚拟结构，并且第一绝缘层的部分可以覆盖虚拟结构。 形成电子器件的过程可以包括形成绝缘层的岛部，其中从顶视图看，岛部完全位于场隔离区内。
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3.发明授权Process of forming an electronic device including insulating layers having different strains 有权形成具有不同应变的绝缘层的电子器件的工艺公开(公告)号：US08021957B2
公开(公告)日：2011-09-20
申请号：US12883096
申请日：2010-09-15
IPC分类号： H01L21/76
CPC分类号： H01L27/1203 , H01L21/0214 , H01L21/0217 , H01L21/02266 , H01L21/0228 , H01L21/31105 , H01L21/3143 , H01L21/3185 , H01L21/76264 , H01L21/84 , H01L29/78 , H01L29/7843
摘要： An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.
摘要翻译： 电子设备可以包括场隔离区域和具有第一应变的第一绝缘层，并且具有从顶视图完全位于场隔离区域内的部分。 电子器件还可以包括具有不同于第一应变的第二应变并且包括开口的第二绝缘层。 从顶视图，第一绝缘层的部分可以位于第二绝缘层的开口内。 在一个实施例中，场隔离区域可以包括虚拟结构，并且第一绝缘层的部分可以覆盖虚拟结构。 形成电子器件的过程可以包括形成绝缘层的岛部，其中从顶视图看，岛部完全位于场隔离区内。
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4.发明申请ELECTRONIC DEVICE INCLUDING INSULATING LAYERS HAVING DIFFERENT STRAINS AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE 有权包括具有不同应变的绝缘层的电子器件和用于形成电子器件的工艺公开(公告)号：US20080179679A1
公开(公告)日：2008-07-31
申请号：US11669794
申请日：2007-01-31
CPC分类号： H01L27/1203 , H01L21/0214 , H01L21/0217 , H01L21/02266 , H01L21/0228 , H01L21/31105 , H01L21/3143 , H01L21/3185 , H01L21/76264 , H01L21/84 , H01L29/78 , H01L29/7843
摘要： An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.
摘要翻译： 电子设备可以包括场隔离区域和具有第一应变的第一绝缘层，并且具有从顶视图完全位于场隔离区域内的部分。 电子器件还可以包括具有不同于第一应变的第二应变并且包括开口的第二绝缘层。 从顶视图，第一绝缘层的部分可以位于第二绝缘层的开口内。 在一个实施例中，场隔离区域可以包括虚拟结构，并且第一绝缘层的部分可以覆盖虚拟结构。 形成电子器件的过程可以包括形成绝缘层的岛部，其中从顶视图看，岛部完全位于场隔离区内。
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5.发明授权Method of forming a semiconductor device with multiple tensile stressor layers 有权用多个拉伸应力层形成半导体器件的方法公开(公告)号：US07678698B2
公开(公告)日：2010-03-16
申请号：US11744581
申请日：2007-05-04
IPC分类号： H01L21/44
CPC分类号： H01L29/7843 , H01L21/268 , H01L21/3105 , H01L21/3185 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.
摘要翻译： 半导体器件具有至少两个用UV辐射固化的拉伸应力层。 在第一应力层之后形成第二拉伸应力层。 在一些实例中，拉伸应力层包括氮化硅和氢。 在一些实例中，第二拉伸应力层由于固化而比第一拉伸应力层具有更大的收缩率。 在一种形式中，固化后的第二张应力层比第一拉伸应力层具有更大的拉伸应力。 拉伸应力层用于改善N沟道晶体管中的载流子迁移率，从而提高晶体管性能。 在一种形式中，提供单组上覆的拉伸应力层，每层越来越厚，并且在固化之前具有越来越多的氢。 在其它实施方案中，形成多个重叠的基团，每个基团具有相似的重复深度和氢分布。
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6.发明授权Process for forming an electronic device including transistor structures with sidewall spacers 失效用于形成包括具有侧壁间隔物的晶体管结构的电子器件的工艺公开(公告)号：US07504289B2
公开(公告)日：2009-03-17
申请号：US11258781
申请日：2005-10-26
IPC分类号： H01L21/8238
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823864 , H01L21/823878 , H01L21/84 , H01L29/7843
摘要： An electronic device can include a first transistor structure including a first gate electrode surrounded by a first sidewall spacer having a first stress and a second transistor structure including a second gate electrode surrounding a second sidewall spacer having second stress. The first sidewall spacer is an only sidewall spacer surrounding the first gate electrode or a closer sidewall spacer as compared to any other sidewall spacer that surrounds the first gate electrode and the second sidewall spacer is an only sidewall spacer surrounding the second gate electrode or a closer sidewall spacer as compared to any other sidewall spacer that surrounds the second gate electrode, wherein the first stress has a lower value as compared to the second stress. More than one process can be used to form the electronic device.
摘要翻译： 电子器件可以包括第一晶体管结构，其包括由具有第一应力的第一侧壁间隔物围绕的第一栅电极和包括围绕具有第二应力的第二侧壁间隔物的第二栅电极的第二晶体管结构。 与围绕第一栅电极的任何其它侧壁间隔物相比，第一侧壁间隔物是围绕第一栅电极或更靠近的侧壁间隔物的唯一侧壁间隔物，并且第二侧壁间隔物是仅围绕第二栅电极的侧壁间隔物 与围绕第二栅电极的任何其它侧壁间隔物相比，其中第一应力具有与第二应力相比较低的值。 可以使用多个过程来形成电子设备。
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7.发明授权Electronic device including a transistor structure having an active region adjacent to a stressor layer 有权电子器件包括具有与应力层相邻的有源区的晶体管结构公开(公告)号：US07714318B2
公开(公告)日：2010-05-11
申请号：US12180818
申请日：2008-07-28
IPC分类号： H01L29/06
CPC分类号： H01L21/84 , H01L21/823412 , H01L21/823481 , H01L21/823807 , H01L21/823878 , H01L27/1203 , H01L29/045 , H01L29/495 , H01L29/4966 , H01L29/517 , H01L29/7843
摘要： An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and the first stress type may be tensile, or the transistor structure may be an n-channel transistor structure and the first stress type may be compressive. The transistor structure can include a channel region that lies within an active region. An edge of the active region includes the interface between the channel region and the field isolation region. From a top view, the layer can include an edge the lies near the edge of the active region. The positional relationship between the edges can affect carrier mobility within the channel region of the transistor structure.
摘要翻译： 电子器件可以包括第一导电类型的晶体管结构，场隔离区域和覆盖场隔离区域的第一应力类型的层。 例如，晶体管结构可以是p沟道晶体管结构，并且第一应力类型可以是拉伸的，或者晶体管结构可以是n沟道晶体管结构，并且第一应力类型可以是压缩的。 晶体管结构可以包括位于有源区内的沟道区。 有源区域的边缘包括沟道区域和场隔离区域之间的界面。 从顶视图，该层可以包括位于活动区域边缘附近的边缘。 边缘之间的位置关系可以影响晶体管结构的沟道区内的载流子迁移率。
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公开(公告)号：US20080272411A1
公开(公告)日：2008-11-06
申请号：US11744581
申请日：2007-05-04
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L29/7843 , H01L21/268 , H01L21/3105 , H01L21/3185 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.
摘要翻译： 半导体器件具有至少两个用UV辐射固化的拉伸应力层。 在第一应力层之后形成第二拉伸应力层。 在一些实例中，拉伸应力层包括氮化硅和氢。 在一些实例中，第二拉伸应力层由于固化而比第一拉伸应力层具有更大的收缩率。 在一种形式中，固化后的第二拉伸应力层比第一拉伸应力层具有更大的拉伸应力。 拉伸应力层用于改善N沟道晶体管中的载流子迁移率，从而提高晶体管性能。 在一种形式中，提供单组上覆的拉伸应力层，每层越来越厚，并且在固化之前具有越来越多的氢。 在其它实施方案中，形成多个重叠的基团，每个基团具有相似的重复深度和氢分布。
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9.发明申请ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE HAVING AN ACTIVE REGION ADJACENT TO A STRESSOR LAYER 有权包括具有活动区域的晶体管结构的电子器件与压力层相邻公开(公告)号：US20080296633A1
公开(公告)日：2008-12-04
申请号：US12180818
申请日：2008-07-28
IPC分类号： H01L27/088
CPC分类号： H01L21/84 , H01L21/823412 , H01L21/823481 , H01L21/823807 , H01L21/823878 , H01L27/1203 , H01L29/045 , H01L29/495 , H01L29/4966 , H01L29/517 , H01L29/7843
摘要： An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and the first stress type may be tensile, or the transistor structure may be an n-channel transistor structure and the first stress type may be compressive. The transistor structure can include a channel region that lies within an active region. An edge of the active region includes the interface between the channel region and the field isolation region. From a top view, the layer can include an edge the lies near the edge of the active region. The positional relationship between the edges can affect carrier mobility within the channel region of the transistor structure.
摘要翻译： 电子器件可以包括第一导电类型的晶体管结构，场隔离区域和覆盖场隔离区域的第一应力类型的层。 例如，晶体管结构可以是p沟道晶体管结构，并且第一应力类型可以是拉伸的，或者晶体管结构可以是n沟道晶体管结构，并且第一应力类型可以是压缩的。 晶体管结构可以包括位于有源区内的沟道区。 有源区域的边缘包括沟道区域和场隔离区域之间的界面。 从顶视图，该层可以包括位于活动区域边缘附近的边缘。 边缘之间的位置关系可以影响晶体管结构的沟道区内的载流子迁移率。
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公开(公告)号：US20080026517A1
公开(公告)日：2008-01-31
申请号：US11460742
申请日：2006-07-28
IPC分类号： H01L21/8234
CPC分类号： H01L29/7843 , H01L21/823807 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： In one aspect, a method for forming a semiconductor device includes forming a stressor layer over a gate stack and a spacer adjacent the gate stack, implanting a species into at least a portion of the stressor layer, and curing the stressor layer. In another aspect, a method includes forming an etch stop layer over a semiconductor substrate, where the etch stop layer has a structure, modifying at least a portion of the structure of the etch stop layer, and curing the etch stop layer after modifying at least the portion of the structure of the etch stop layer.
摘要翻译： 在一个方面，一种用于形成半导体器件的方法包括在栅极叠层上形成应力层，邻近栅叠层形成间隔物，将物质注入至少一部分应力层中，并固化应力层。 在另一方面，一种方法包括在半导体衬底上形成蚀刻停止层，其中蚀刻停止层具有结构，修饰蚀刻停止层的结构的至少一部分，以及在至少修改蚀刻停止层之后固化蚀刻停止层 蚀刻停止层的结构部分。
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