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公开(公告)号：US11117112B2
公开(公告)日：2021-09-14
申请号：US16833446
申请日：2020-03-27
Applicant: REC Silicon Inc
Inventor： Kahl Brown , Matthew J. Miller , Benjamin Center , Gerald A. Zeininger , Stein Julsrud
Abstract: A method of controlling particle additions to a fluidized bed reactor includes measuring pressure fluctuations inside the fluidized bed reactor over a selected time period, determining a pressure parameter indicative of amplitudes of the pressure fluctuations, comparing the pressure parameter to a specified threshold, and controlling particle additions to the fluidized bed reactor when the pressure parameter deviates from the specified threshold.
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2.发明申请公开(公告)号：US20180208472A1
公开(公告)日：2018-07-26
申请号：US15416310
申请日：2017-01-26
Applicant: REC Silicon Inc
Inventor： Robert J. Geertsen , Matthew J. Miller , Justin Johnston , Sefa Yilmaz , Stein Julsrud
IPC: C01B33/037
CPC classification number: C01B33/037 , C01P2006/80
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
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公开(公告)号：US20140314655A1
公开(公告)日：2014-10-23
申请号：US14243822
申请日：2014-04-02
Applicant: REC Silicon Inc
Inventor： Stein Julsrud , Anja Olafsen Sjastad
IPC: C01B33/107
CPC classification number: C01B33/1071 , Y02E60/324
Abstract: Methods for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient hydrogen is added to a silicon tetrachloride process stream to inhibit iron (II) chloride formation and reduce iron suicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof. Trichlorosilane also may be added to the silicon tetrachloride process stream.
Abstract translation: 公开了在氢氯硅烷生产设备中还原铁硅化物和/或磷化铁结垢和/或腐蚀的方法。 将足够的氢气加入到四氯化硅工艺流中以抑制氯化铁（II）的形成并减少铁硅化物和/或磷化铁结垢，过热器腐蚀或其组合。 也可以在四氯化硅工艺流中加入三氯硅烷。
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公开(公告)号：US20130101489A1
公开(公告)日：2013-04-25
申请号：US13656591
申请日：2012-10-19
Applicant: REC SILICON INC
Inventor： Stein Julsrud , Anja Olafsen Sjastad
IPC: C01B33/107
CPC classification number: C01B33/1071 , C01B33/10731 , C01B33/10778
Abstract: Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.
Abstract translation: 公开了一种在氢氯硅烷生产设备中还原铁硅化物和/或磷化铁结垢和/或腐蚀的方法的实施方案。 足够的三氯硅烷被包括在四氯化硅工艺流中以最小化氯化氢形成，从而抑制氯化铁（II）的形成和还原铁硅化物和/或磷化铁结垢，过热器腐蚀或其组合。
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公开(公告)号：US20180213603A1
公开(公告)日：2018-07-26
申请号：US15416321
申请日：2017-01-26
Applicant: REC Silicon Inc
Inventor： Matthew J. Miller , Robert J. Geertsen , Stein Julsrud , Sefa Yilmaz , Raymond Desbordes
CPC classification number: C01B33/037 , F16L9/22 , F27D3/0033 , F27D3/10 , F27D3/16 , F27D2003/166 , F27D2019/0068 , H05B3/148
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
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Patent Agency Ranking
公开(公告)号：US20180208470A1
公开(公告)日：2018-07-26
申请号：US15416274
申请日：2017-01-26
Applicant: REC Silicon Inc
Inventor： Matthew J. Miller , Robert J. Geertsen , Justin Johnston , Stein Julsrud , Sefa Yilmaz
IPC: C01B33/037
CPC classification number: C01B33/037 , C01P2006/80
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
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7.发明授权Method and apparatus for consolidation of granular silicon and measuring non-metals content 有权用于固结颗粒状硅并测量非金属含量的方法和装置公开(公告)号：US09580327B2
公开(公告)日：2017-02-28
申请号：US14178103
申请日：2014-02-11
Applicant: REC Silicon Inc
Inventor： Sefa Yilmaz , Theodore F. Ciszek , Matthew J. Miller , Stein Julsrud
IPC: C01B33/021 , G01N21/3563 , C01B33/037 , C01B33/02 , C01B33/035 , C01B31/14 , G01N21/35
CPC classification number: C01B33/021 , C01B32/384 , C01B33/02 , C01B33/035 , C01B33/037 , G01N21/3563 , G01N2021/3595
Abstract: Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.
Abstract translation: 公开了用于固结颗粒状硅并确定固结硅的微量元素含量的装置和方法。 将硅颗粒放置在容器中，并且将至少部分地嵌入颗粒中的已知纯度的硅团块。 将坯料预热到足以与感应加热器相连的温度。 当硅团熔化时，与熔融硅相邻的硅颗粒也会熔化。 容器通过感应线圈，以随着熔融硅离开感应线圈而使硅颗粒的前端到后端逐渐地感应加热和熔融，每个区域都固化，从而提供多晶硅锭。 将多晶硅锭切成晶片，通过低温傅里叶变换红外光谱法分析晶锭中微量元素的含量。
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公开(公告)号：US20180208471A1
公开(公告)日：2018-07-26
申请号：US15416291
申请日：2017-01-26
Applicant: REC Silicon Inc
Inventor： Robert J. Geertsen , Matthew J. Miller , Justin Johnston , Stein Julsrud , Sefa Yilmaz
IPC: C01B33/037 , F27D3/00 , F27D3/10
CPC classification number: C01B33/037 , F27D3/0033 , F27D3/10 , F27D2003/166
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
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公开(公告)号：US09463982B2
公开(公告)日：2016-10-11
申请号：US13656591
申请日：2012-10-19
Applicant: REC Silicon Inc
Inventor： Stein Julsrud , Anja Olafsen Sjastad
IPC: C01B33/107
CPC classification number: C01B33/1071 , C01B33/10731 , C01B33/10778
Abstract: Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.
Abstract translation: 公开了一种在氢氯硅烷生产设备中还原铁硅化物和/或磷化铁结垢和/或腐蚀的方法的实施方案。 足够的三氯硅烷被包括在四氯化硅工艺流中以最小化氯化氢形成，从而抑制氯化铁（II）的形成和还原铁硅化物和/或磷化铁结垢，过热器腐蚀或其组合。
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10.发明申请NON-CONTAMINATING BONDING MATERIAL FOR SEGMENTED SILICON CARBIDE LINER IN A FLUIDIZED BED REACTOR 有权流化床反应器中分离的碳化硅衬里的非接触粘结材料公开(公告)号：US20160045878A1
公开(公告)日：2016-02-18
申请号：US14461307
申请日：2014-08-15
Applicant: REC Silicon Inc
Inventor： Sefa Yilmaz , Matthew J. Miller , Michael V. Spangler , Barry Wemp , Stein Julsrud
CPC classification number: B01J19/02 , B01J2/006 , B01J2/16 , B01J8/1872 , B01J8/24 , B01J2208/00168 , B32B1/08 , C01B33/021 , C04B35/565 , C04B37/005 , C04B2235/6562 , C04B2235/72 , C04B2235/725 , C04B2235/727 , C04B2237/062 , C04B2237/083 , C04B2237/09 , C04B2237/365 , C04B2237/52 , C04B2237/78 , C23C16/24 , C23C16/4404 , C23C16/442 , F27B15/06 , F27D1/0006 , F27D1/045
Abstract: Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
Abstract translation: 公开了用于生产多晶硅涂覆颗粒材料的流化床反应器中的分段碳化硅衬垫，以及制造和使用分段碳化硅衬垫的方法。 还公开了用于接合碳化硅段的非污染接合材料。 一个或多个碳化硅段可由反应结合的碳化硅构成。
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