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1.
公开(公告)号:US5380621A
公开(公告)日:1995-01-10
申请号:US55400
申请日:1993-05-03
申请人: Robert R. Dichiara , Christopher F. Lyons , Ratnasabapathy Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
发明人: Robert R. Dichiara , Christopher F. Lyons , Ratnasabapathy Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
IPC分类号: G03F7/11 , G03F7/09 , H01L21/027 , H01L21/30 , G03C1/492
CPC分类号: G03F7/091 , Y10S522/904
摘要: An antireflective coating composition (ARC) for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.
摘要翻译: 一种用于化学放大光致抗蚀剂组合物的抗反射涂料组合物(ARC),其包含对中和深紫外线辐射具有高吸收性的聚合物组合物,其对于与化学放大的光致抗蚀剂组合物的接触反应基本上是惰性的,并且不溶于显影剂 用于化学放大光致抗蚀剂组合物。
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2.
公开(公告)号:US5482817A
公开(公告)日:1996-01-09
申请号:US315318
申请日:1994-09-29
申请人: Robert R. Dichiara , Christopher F. Lyons , Ratnasabapathy Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
发明人: Robert R. Dichiara , Christopher F. Lyons , Ratnasabapathy Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
IPC分类号: G03F7/11 , G03F7/09 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号: G03F7/091 , Y10S522/904
摘要: An antireflective coating composition (ARC) for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.
摘要翻译: 一种用于化学放大光致抗蚀剂组合物的抗反射涂料组合物(ARC),其包含对中和深紫外线辐射具有高吸收性的聚合物组合物,其对于与化学放大的光致抗蚀剂组合物的接触反应基本上是惰性的,并且不溶于显影剂 用于化学放大光致抗蚀剂组合物。
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公开(公告)号:US5554485A
公开(公告)日:1996-09-10
申请号:US315271
申请日:1994-09-29
申请人: Robert R. Dichiara , James T. Fahey , Pamela E. Jones , Christopher F. Lyons , Wayne M. Moreau , Ratnam Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
发明人: Robert R. Dichiara , James T. Fahey , Pamela E. Jones , Christopher F. Lyons , Wayne M. Moreau , Ratnam Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
IPC分类号: G03F7/11 , G03F7/09 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号: G03F7/091 , Y10S522/904
摘要: An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.
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4.
公开(公告)号:US5401614A
公开(公告)日:1995-03-28
申请号:US17938
申请日:1993-02-16
申请人: Robert R. Dichiara , James T. Fahey , Pamela E. Jones , Christopher F. Lyons , Wayne M. Moreau , Ratnam Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
发明人: Robert R. Dichiara , James T. Fahey , Pamela E. Jones , Christopher F. Lyons , Wayne M. Moreau , Ratnam Sooriyakumaran , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
IPC分类号: G03F7/11 , G03F7/09 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号: G03F7/091 , Y10S522/904
摘要: An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.
摘要翻译: 一种用于化学放大光致抗蚀剂组合物的抗反射涂料组合物,其包含对中和深紫外线辐射具有高度吸收性的聚合物组合物,其对于与化学放大的光致抗蚀剂组合物的接触反应基本上是惰性的,并且其不溶于用于化学 放大的光致抗蚀剂组合物。
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公开(公告)号:US5607824A
公开(公告)日:1997-03-04
申请号:US281398
申请日:1994-07-27
申请人: James T. Fahey , Brian W. Herbst , Leo L. Linehan , Wayne M. Moreau , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
发明人: James T. Fahey , Brian W. Herbst , Leo L. Linehan , Wayne M. Moreau , Gary T. Spinillo , Kevin M. Welsh , Robert L. Wood
IPC分类号: G03F7/004 , C08G65/40 , C08G67/00 , C09D171/00 , G03F7/09 , G03F7/11 , H01L21/027 , G03C1/825
CPC分类号: C08G65/4012 , C09D171/00 , G03F7/091 , C08G2650/64
摘要: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.
摘要翻译: 已经显示二苯甲酮和双酚A的共聚物具有DUV吸收性质。 因此,共聚物在微光刻应用中作为抗反射涂层具有特殊的用途。 将蒽掺入共聚物主链增强了在248nm的吸收。 用于共聚物的端塞可以根据用户的需要而广泛变化,并且可以选择以促进不同波长的粘附,稳定性和吸收。
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公开(公告)号:US5372912A
公开(公告)日:1994-12-13
申请号:US998984
申请日:1992-12-31
申请人: Robert D. Allen , Jr.; Willard E. Conley , William D. Hinsberg, III , Pamela E. Jones , Kevin M. Welsh
发明人: Robert D. Allen , Jr.; Willard E. Conley , William D. Hinsberg, III , Pamela E. Jones , Kevin M. Welsh
CPC分类号: G03F7/039 , Y10S430/111
摘要: The present invention relates to a radiation-sensitive resist composition and the process for its use in the manufacture of integrated circuits. The composition comprises a radiation-sensitive acid generator, a binder soluble in aqueous base and an acrylate copolymer having acid labile pendant groups.
摘要翻译: 本发明涉及一种辐射敏感抗蚀剂组合物及其用于制造集成电路的方法。 该组合物包含辐射敏感性酸产生剂,可溶于碱水溶液的粘合剂和具有酸不稳定侧基的丙烯酸酯共聚物。
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公开(公告)号:US5164278A
公开(公告)日:1992-11-17
申请号:US487348
申请日:1990-03-01
申请人: William R. Brunsvold , Christopher J. Knors , Melvin W. Montgomery , Wayne M. Moreau , Kevin M. Welsh
发明人: William R. Brunsvold , Christopher J. Knors , Melvin W. Montgomery , Wayne M. Moreau , Kevin M. Welsh
IPC分类号: G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
CPC分类号: G03F7/039 , Y10S430/115 , Y10S430/119
摘要: Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.
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