公开(公告)号：US5164278A

公开(公告)日：1992-11-17

申请号：US487348

申请日：1990-03-01

申请人： William R. Brunsvold ,  Christopher J. Knors ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Kevin M. Welsh

发明人： William R. Brunsvold ,  Christopher J. Knors ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Kevin M. Welsh

IPC分类号： G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/039 ,  Y10S430/115 ,  Y10S430/119

摘要： Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.

公开(公告)号：US5362599A

公开(公告)日：1994-11-08

申请号：US792115

申请日：1991-11-14

申请人： Christopher J. Knors ,  Steve S. Miura ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Randolph J. Smith

发明人： Christopher J. Knors ,  Steve S. Miura ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Randolph J. Smith

IPC分类号： G03F7/022 ,  H01L21/027 ,  G03F7/023 ,  G03F7/30

CPC分类号： G03F7/022

摘要： Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.

摘要翻译： 公开了正性光致抗蚀剂组合物和使用光致抗蚀剂组合物在制造半导体器件中制造亚微米图案的方法。 光致抗蚀剂含有混合萘醌二叠氮化物双和三（一，二和三羟基苯基）烷烃的4-和5-磺酸酯的敏化剂。

公开(公告)号：US5272042A

公开(公告)日：1993-12-21

申请号：US761183

申请日：1991-09-17

申请人： Robert D. Allen ,  William R. Brunsvold ,  Burton J. Carpenter ,  William D. Hinsberg ,  Joseph LaTorre ,  Michael G. McMaster ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Logan L. Simpson ,  Robert J. Tweig ,  Gregory M. Wallraff

发明人： Robert D. Allen ,  William R. Brunsvold ,  Burton J. Carpenter ,  William D. Hinsberg ,  Joseph LaTorre ,  Michael G. McMaster ,  Melvin W. Montgomery ,  Wayne M. Moreau ,  Logan L. Simpson ,  Robert J. Tweig ,  Gregory M. Wallraff

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30 ,  G03C1/73

CPC分类号： G03F7/039 ,  Y10S430/111 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/127

摘要： Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.

摘要翻译： 公开了一种正性光致抗蚀剂。 光致抗蚀剂具有基本上水和碱不溶性的光不稳定聚合物作为其聚合物组分。 光致抗蚀剂还包括能够形成强酸的光酸产生剂。 该光酸产生剂可以是衍生自N-羟基酰胺或N-羟基酰亚胺的磺酸酯。 最后，光致抗蚀剂组合物包括适当的光敏剂。

公开(公告)号：US5023164A

公开(公告)日：1991-06-11

申请号：US425531

申请日：1989-10-23

申请人： William R. Brunsvold ,  Philip Chiu ,  Willard E. Conley, Jr. ,  Dale M. Crockatt ,  Melvin W. Montgomery ,  Wayne M. Moreau

发明人： William R. Brunsvold ,  Philip Chiu ,  Willard E. Conley, Jr. ,  Dale M. Crockatt ,  Melvin W. Montgomery ,  Wayne M. Moreau

IPC分类号： C08G8/00 ,  C08G8/10 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/039

摘要： Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.

公开(公告)号：US5744537A

公开(公告)日：1998-04-28

申请号：US863678

申请日：1997-05-27

申请人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

发明人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

IPC分类号： G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/091 ,  G03F7/092 ,  Y10T428/3154

摘要： Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

摘要翻译： 水性可显影光致抗蚀剂组合物的图案转印的增强的保真度是通过含氟的顶部抗有效涂层实现的，其折射率近似等于下面光致抗蚀剂的平方根，并且可在光致抗蚀剂的显影剂中除去。

公开(公告)号：US6057080A

公开(公告)日：2000-05-02

申请号：US987073

申请日：1997-12-09

申请人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

发明人： William R. Brunsvold ,  George J. Hefferon ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Robert L. Wood

IPC分类号： G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/091 ,  G03F7/092

摘要： Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

摘要翻译： 水性可显影光致抗蚀剂组合物的图案转印的增强的保真度是通过含氟的顶部抗反射涂层实现的，其折射率近似等于下面的光致抗蚀剂的平方根，并且可在光致抗蚀剂的显影剂中除去。

公开(公告)号：US5607824A

公开(公告)日：1997-03-04

申请号：US281398

申请日：1994-07-27

申请人： James T. Fahey ,  Brian W. Herbst ,  Leo L. Linehan ,  Wayne M. Moreau ,  Gary T. Spinillo ,  Kevin M. Welsh ,  Robert L. Wood

发明人： James T. Fahey ,  Brian W. Herbst ,  Leo L. Linehan ,  Wayne M. Moreau ,  Gary T. Spinillo ,  Kevin M. Welsh ,  Robert L. Wood

IPC分类号： G03F7/004 ,  C08G65/40 ,  C08G67/00 ,  C09D171/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03C1/825

CPC分类号： C08G65/4012 ,  C09D171/00 ,  G03F7/091 ,  C08G2650/64

摘要： A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

摘要翻译： 已经显示二苯甲酮和双酚A的共聚物具有DUV吸收性质。 因此，共聚物在微光刻应用中作为抗反射涂层具有特殊的用途。 将蒽掺入共聚物主链增强了在248nm的吸收。 用于共聚物的端塞可以根据用户的需要而广泛变化，并且可以选择以促进不同波长的粘附，稳定性和吸收。

公开(公告)号：US5554485A

公开(公告)日：1996-09-10

申请号：US315271

申请日：1994-09-29

申请人： Robert R. Dichiara ,  James T. Fahey ,  Pamela E. Jones ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Ratnam Sooriyakumaran ,  Gary T. Spinillo ,  Kevin M. Welsh ,  Robert L. Wood

发明人： Robert R. Dichiara ,  James T. Fahey ,  Pamela E. Jones ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Ratnam Sooriyakumaran ,  Gary T. Spinillo ,  Kevin M. Welsh ,  Robert L. Wood

IPC分类号： G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F7/091 ,  Y10S522/904

摘要： An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

公开(公告)号：US5401614A

公开(公告)日：1995-03-28

申请号：US17938

申请日：1993-02-16

申请人： Robert R. Dichiara ,  James T. Fahey ,  Pamela E. Jones ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Ratnam Sooriyakumaran ,  Gary T. Spinillo ,  Kevin M. Welsh ,  Robert L. Wood

发明人： Robert R. Dichiara ,  James T. Fahey ,  Pamela E. Jones ,  Christopher F. Lyons ,  Wayne M. Moreau ,  Ratnam Sooriyakumaran ,  Gary T. Spinillo ,  Kevin M. Welsh ,  Robert L. Wood

IPC分类号： G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F7/091 ,  Y10S522/904

摘要： An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

摘要翻译： 一种用于化学放大光致抗蚀剂组合物的抗反射涂料组合物，其包含对中和深紫外线辐射具有高度吸收性的聚合物组合物，其对于与化学放大的光致抗蚀剂组合物的接触反应基本上是惰性的，并且其不溶于用于化学 放大的光致抗蚀剂组合物。

公开(公告)号：US20080227030A1

公开(公告)日：2008-09-18

申请号：US10597904

申请日：2004-02-11

申请人： Wayne M. Moreau ,  Marie Angelopoulos ,  Wu-Song Huang ,  David R. Medeiros ,  Karen E. Petrillo

发明人： Wayne M. Moreau ,  Marie Angelopoulos ,  Wu-Song Huang ,  David R. Medeiros ,  Karen E. Petrillo

IPC分类号： G03F7/004 ,  G03F7/34

CPC分类号： G03F7/0045 ,  G03F1/78 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/143

摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

摘要翻译： 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。