Semiconductor-based image sensor
    1.
    发明申请
    Semiconductor-based image sensor 审中-公开
    基于半导体的图像传感器

    公开(公告)号:US20070176108A1

    公开(公告)日:2007-08-02

    申请号:US10597017

    申请日:2005-01-07

    IPC分类号: G01T1/24 H01L27/146

    CPC分类号: H04N5/32 H04N5/37455

    摘要: A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator (20 to 29) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter (20 to 30), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.

    摘要翻译: 描述了具有多个检测器元件或图像像素的检测器装置和/或基于半导体的图像传感器,每个检测器装置具有集成的SD-(Sigma Delta)调制器(20-29)或集成SD-A / (Sigma Delta Analog / Digital)转换器(20至30),以及特别是基于CMOS半导体的这种检测器装置和/或这种图像传感器。 特别是基于SD调制器和SD-A / D转换器的差分版本和/或多相结构,具有特别高的噪声鲁棒性,高动态范围和 可以产生较小的噪音,因此特别适用于计算机断层扫描(CT)装置。

    Pixel Implemented Current to Frequency Converter
    2.
    发明申请
    Pixel Implemented Current to Frequency Converter 审中-公开
    像素实现电流到频率转换器

    公开(公告)号:US20080217546A1

    公开(公告)日:2008-09-11

    申请号:US11813215

    申请日:2005-12-19

    IPC分类号: G01T1/24

    CPC分类号: G01T1/2928 G01T1/247

    摘要: The present invention provides a radiation sensor (104) that has a plurality of sensor elements, wherein each sensor element has a photoelectric detection portion and an integrated current to frequency converter for a built-in analog digital conversion of an acquired analog signal being indicative of an intensity of electromagnetic radiation impinging on the photoelectric detection part. Typically, the detector element corresponds to a pixel of a light detector, such as a photodiode. Preferably, the current to frequency converter as well as the photoelectric conversion portion are arranged besides one another on a common substrate and are implemented on the basis of CMOS technology allowing for a costs efficient mass production of the radiation sensor.

    摘要翻译: 本发明提供一种辐射传感器(104),其具有多个传感器元件,其中每个传感器元件具有光电检测部分和集成电流 - 频率转换器,用于对所获取的模拟信号进行内置模拟数字转换, 电磁辐射强度照射在光电检测部分上。 通常,检测器元件对应于诸如光电二极管的光检测器的像素。 优选地,电流到频率转换器以及光电转换部分在公共衬底上彼此相互排列,并且基于允许辐射传感器的成本有效的批量生产的CMOS技术来实现。

    Pixel Implemented Current Amplifier
    3.
    发明申请
    Pixel Implemented Current Amplifier 审中-公开
    像素实现电流放大器

    公开(公告)号:US20110168892A1

    公开(公告)日:2011-07-14

    申请号:US11813220

    申请日:2005-12-19

    IPC分类号: G01J1/42

    摘要: The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.

    摘要翻译: 本发明提供了一种辐射传感器,其特征在于多个单独的传感器元件,例如 像素,每个具有适于响应于电磁辐射的冲击而产生电流的辐射检测部分和用于放大由辐射检测部分产生的光电流的电流放大器。 因此,电流放大在辐射传感器本身的每个像素内本地进行。 这种局部电流放大有助于增加辐射传感器的灵敏度和响应,因此可以在CMOS技术的基础上实现辐射传感器。 通过电流放大,辐射传感器可以通过读出装置和具有不同输入规格的信号处理模块进行读出。此外,像素实现的电流放大器所需的偏置电流在每个像素内被再现, 耦合到连续或相邻布置的传感器元件或像素,从而提供级联的偏置电流再生和偏置电流分配方案。

    ELECTRICALLY SHIELDED THROUGH-WAFER INTERCONNECT
    4.
    发明申请
    ELECTRICALLY SHIELDED THROUGH-WAFER INTERCONNECT 有权
    电气屏蔽通过波形互连

    公开(公告)号:US20100171196A1

    公开(公告)日:2010-07-08

    申请号:US12063774

    申请日:2006-08-15

    IPC分类号: H01L23/538

    摘要: Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.

    摘要翻译: 通过晶片互连允许为检测器芯片使用经济高效的基板。 根据本发明的示例性实施例,可以提供用于检查装置中的检测元件,其包括具有敏感区域的晶片和同轴贯通晶片互连结构。 这可以通过提供有效的屏蔽来降低互连的敏感性。

    Modular Device For the Detection and/or Transmission of Radiation
    5.
    发明申请
    Modular Device For the Detection and/or Transmission of Radiation 有权
    用于辐射检测和/或传输的模块化设备

    公开(公告)号:US20080230706A1

    公开(公告)日:2008-09-25

    申请号:US10599422

    申请日:2005-03-22

    IPC分类号: G01T1/166 G01T1/24 A61B6/00

    摘要: The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.

    摘要翻译: 本发明涉及一种用于检测和/或传输辐射的装置,特别是一种X射线检测器1,其由载体10组成,其上布置有检测器模块阵列20。 载体10包括孔11,通过该孔11可以插入检测器模块20的后侧的球,以便固定模块,使得它们仍然可以一定程度地旋转。 由于这种自由度,传感器模块20可以在组装期间自己对准。

    Modular device for the detection and/or transmission of radiation with self-aligning modules
    6.
    发明授权
    Modular device for the detection and/or transmission of radiation with self-aligning modules 有权
    用于利用自对准模块检测和/或传输辐射的模块化设备

    公开(公告)号:US07525097B2

    公开(公告)日:2009-04-28

    申请号:US10599422

    申请日:2005-03-22

    IPC分类号: H01L27/146

    摘要: The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.

    摘要翻译: 本发明涉及一种用于检测和/或传输辐射的装置,特别是一种X射线检测器1,其由载体10组成,其上布置有检测器模块阵列20。 载体10包括孔11,通过该孔11可以插入检测器模块20的后侧的球,以便固定模块,使得它们仍然可以一定程度地旋转。 由于这种自由度,传感器模块20可以在组装期间自己对准。

    Shielding for an x-ray detector
    7.
    发明申请
    Shielding for an x-ray detector 有权
    屏蔽X射线探测器

    公开(公告)号:US20070057192A1

    公开(公告)日:2007-03-15

    申请号:US10596152

    申请日:2004-12-02

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: The invention relates to an X-ray detector with detector elements (1) arranged in a layer. The detector elements (1) contain a scintillator element (2) for the conversion of X-rays (X) into photons (v), a photodiode (5) for detection of the photons (v), and a processing circuit (4) for the processing of electric signals generated by the photodiode (5). In order to protect the electronics (4) from X-rays a shielding (3) of variable effective thickness (d1, d2) is disposed in front of the electronics (4). This shielding (3) can in particular be L-shaped. By reduction of the effective thickness of the shielding (3) to a necessary minimum the volume of the scintillator unit (2) can be maximized.

    摘要翻译: 本发明涉及一种具有布置在一层中的检测器元件(1)的X射线检测器。 检测器元件(1)包括用于将X射线(X)转换成光子(v)的闪烁体元件(2),用于检测光子(v)的光电二极管(5)和处理电路(4) 用于处理由光电二极管(5)产生的电信号。 为了保护电子器件(4)免受X射线影响,可变有效厚度(d 1,d 2)的屏蔽层(3)设置在电子器件(4)的前面。 这种屏蔽(3)可以特别是L形。 通过将屏蔽(3)的有效厚度减小到所需的最小值,可以使闪烁体单元(2)的体积最大化。

    Semiconductor substrate and methods for the production thereof
    8.
    发明授权
    Semiconductor substrate and methods for the production thereof 有权
    半导体衬底及其制造方法

    公开(公告)号:US08357944B2

    公开(公告)日:2013-01-22

    申请号:US12063382

    申请日:2006-08-10

    IPC分类号: H01L29/18

    摘要: The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.

    摘要翻译: 本发明涉及半导体衬底及其制造方法。 在这方面,本发明的目的是提供可以更经济有效地制造并且可以实现高排列密度以及良好导电性和封闭表面的半导体衬底。 根据本发明,导电连接从其前侧通过基板被引导到后侧。 导电连接从外部完全包围。 绝缘体由填充有材料的开口形成。 内壁设置有电介质涂层和/或填充有电绝缘或导电材料。 导电连接形成有另外的开口,其填充有导电材料并且布置在绝缘体的内部。 开口形成有与前侧正交对准或者在后侧方向连续地逐渐变细的无梯度内壁。

    SEMICONDUCTOR SUBSTRATE AND METHODS FOR THE PRODUCTION THEREOF
    9.
    发明申请
    SEMICONDUCTOR SUBSTRATE AND METHODS FOR THE PRODUCTION THEREOF 有权
    半导体基板及其生产方法

    公开(公告)号:US20100295066A1

    公开(公告)日:2010-11-25

    申请号:US12063382

    申请日:2006-08-10

    摘要: The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.

    摘要翻译: 本发明涉及半导体衬底及其制造方法。 在这方面,本发明的目的是提供可以更经济有效地制造并且可以实现高排列密度以及良好导电性和封闭表面的半导体衬底。 根据本发明,导电连接从其前侧通过基板被引导到后侧。 导电连接从外部完全包围。 绝缘体由填充有材料的开口形成。 内壁设置有电介质涂层和/或填充有电绝缘或导电材料。 导电连接形成有另外的开口,其填充有导电材料并且布置在绝缘体的内部。 开口形成有与前侧正交对准或者在后侧方向连续地逐渐变细的无梯度内壁。

    GRID FOR SELECTIVE ABSORPTION OF ELECTROMAGNETIC RADIATION AND METHOD FOR ITS MANUFACTURE
    10.
    发明申请
    GRID FOR SELECTIVE ABSORPTION OF ELECTROMAGNETIC RADIATION AND METHOD FOR ITS MANUFACTURE 审中-公开
    用于选择性吸收电磁辐射的网格及其制造方法

    公开(公告)号:US20090323899A1

    公开(公告)日:2009-12-31

    申请号:US12067181

    申请日:2006-09-11

    IPC分类号: G21K1/02 A61B6/06

    摘要: A Grid (1) for selective absorption of electromagnetic radiation (2, 3), as used e.g. in CT or NM imaging, comprises a block of a rigid foam material (4), where the foam material is essentially transparent to the electromagnetic radiation (2, 3), a first set of radiation absorbing lamellae (5), and a second set of radiation absorbing lamellae (6), the first and the second set of lamellae are arranged in the block of foam material so that a radiation transmission direction (T) is defined, the first set of lamellae and the second set of lamellae being arranged on top of each other with respect to the transmission direction (T). Such a grid arrangement is rigid due to the use of a carrier material, can be manufactured precisely and, furthermore, two-dimensional grids can be manufactured without the need to physically intersect the lamellae.

    摘要翻译: 用于选择性吸收电磁辐射(2,3)的格栅(1) 在CT或NM成像中包括刚性泡沫材料块(4),其中泡沫材料对电磁辐射(2,3)基本上是透明的,第一组辐射吸收薄片(5)和第二组 的辐射吸收薄片(6),第一和第二组薄片布置在泡沫材料块中,从而定义辐射透射方向(T),第一组薄片和第二组薄片布置在 相对于传输方向(T)彼此相邻。 由于使用载体材料,这种格栅布置是刚性的,因此可以精确地制造,此外,可以制造二维格栅,而不需要物理地与薄片相交。