DATA DRIVER AND DISPLAY DEVICE INCLUDING DATA DRIVER

    公开(公告)号:US20230078957A1

    公开(公告)日:2023-03-16

    申请号:US17891882

    申请日:2022-08-19

    Abstract: A data driver is disclosed that includes a first digital-to-analog converter, a second digital-to-analog converter, a third digital-to-analog converter, a first pseudo amplifier, a second pseudo amplifier, and a main amplifier. The first digital-to-analog converter includes a first resistor string including first resistors and a first decoder. The second digital-to-analog converter includes a second resistor string including second resistors and a second decoder, and is connected to the first digital-to-analog converter. The third digital-to-analog converter is connected to the second digital-to-analog converter. The first pseudo amplifier includes first and second driving transistors. The second pseudo amplifier includes third and fourth driving transistors. The main amplifier is connected to the first and second pseudo amplifiers, and is configured to generate a reference current. The second resistor string is connected between first and second nodes, and a first output node disposed between the first and second driving transistors is connected to the first node. A second output node disposed between the third and fourth driving transistors is connected to the second node.

    Light-emitting device and electronic apparatus including same

    公开(公告)号:US12295253B2

    公开(公告)日:2025-05-06

    申请号:US17351073

    申请日:2021-06-17

    Abstract: A light-emitting device includes: a first electrode; a second electrode; m emission units between the first electrode and the second electrode; and m−1 charge generation layer(s), each located between two adjacent emission units, and including m−1 n-type charge generation layer(s) and m−1 p-type charge generation layer(s). The m emission units each include a hole transport region, an emission layer, and an electron transport region. A first hole transport region in a first emission unit closest to the first electrode may include a hole transfer layer and a hole injection layer and/or a hole transport layer. The hole transfer layer may be a single layer consisting of an electron-transporting compound including a phosphine oxide group (P═O), a phosphine sulfide group (P═S), a π electron-deficient nitrogen-containing C1-C60 cyclic group, or any combination thereof. A highest occupied molecular orbital (HOMO) energy level of the hole transfer layer may be about −6.0 eV to about −5.3 eV.

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