公开(公告)号：US20180198019A1

公开(公告)日：2018-07-12

申请号：US15678462

申请日：2017-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Ho KIM ,  Min Hwan KIM ,  Jang Mi KIM ,  Chul Min KIM ,  Jeong Wook LEE ,  Jae Deok JEONG ,  Yong Seok CHOI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/325

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

公开(公告)号：US20130316481A1

公开(公告)日：2013-11-28

申请号：US13846905

申请日：2013-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Ho PARK ,  Ki Sung KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Tae Hyun LEE

IPC: H01L33/00

CPC classification number: H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。

公开(公告)号：US20160111596A1

公开(公告)日：2016-04-21

申请号：US14979869

申请日：2015-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Min KIM ,  Tan SAKONG ,  Suk Ho YOON ,  Keon Hun LEE ,  Do Young RHEE ,  Sang Don LEE

IPC: H01L33/14 ,  H05B33/08 ,  H01L25/16 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0872 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Abstract translation: 照明系统包括：照明单元，包括至少一个照明装置，被配置为测量大气温度和湿度中的至少一个的感测单元;被配置为比较由传感器单元测量的温度和湿度中的至少一个的控制单元 具有设定值，并且作为比较的结果确定照明单元的色温，以及被配置为驱动到照明单元以具有确定的色温的驱动单元。