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1.发明申请公开(公告)号：US20140131726A1
公开(公告)日：2014-05-15
申请号：US13974751
申请日：2013-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Don LEE , Jong Uk SEO , Sang Heon HAN
CPC classification number: H01L33/32 , H01L33/007 , H01L33/02
Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device includes a base layer configured of a group III nitride semiconductor, a polarity modifying layer formed on a group III element polar surface of the base layer, and a light emitting laminate having a multilayer structure of the group III nitride semiconductor formed on the polarity modifying layer, an upper surface of at least one layer in the multilayer structure being formed of an N polar surface.
Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括由III族氮化物半导体构成的基极层，形成在基极层的III族元素极性表面上的极性调整层，以及形成有III族氮化物半导体的多层结构的发光层叠体 在极性改性层上，多层结构中的至少一层的上表面由N极性表面形成。
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公开(公告)号：US20160111596A1
公开(公告)日：2016-04-21
申请号：US14979869
申请日：2015-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Min KIM , Tan SAKONG , Suk Ho YOON , Keon Hun LEE , Do Young RHEE , Sang Don LEE
CPC classification number: H01L33/145 , H01L25/167 , H01L33/06 , H01L33/32 , H01L2224/32225 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H05B33/0872 , H01L2924/00012 , H01L2924/00
Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.
Abstract translation: 照明系统包括：照明单元，包括至少一个照明装置，被配置为测量大气温度和湿度中的至少一个的感测单元;被配置为比较由传感器单元测量的温度和湿度中的至少一个的控制单元 具有设定值，并且作为比较的结果确定照明单元的色温，以及被配置为驱动到照明单元以具有确定的色温的驱动单元。
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Patent Agency Ranking
3.发明申请METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR THIN FILM AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR DEVICE USING THE SAME 有权用于制备氮化物半导体薄膜的方法和使用其制造氮化物半导体器件的方法公开(公告)号：US20140370634A1
公开(公告)日：2014-12-18
申请号：US14250070
申请日：2014-04-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keon Hun LEE , Min Ho KIM , Jong Uk SEO , Suk Ho YOON , Kee Won LEE , Sang Don LEE , Ho Chul LEE
CPC classification number: H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02576 , H01L21/02658 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/22
Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.
Abstract translation: 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。
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公开(公告)号：US20210111187A1
公开(公告)日：2021-04-15
申请号：US16890115
申请日：2020-06-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Ho AHN , Sung-Min HWANG , Joon-Sung LIM , Bum Kyu KANG , Sang Don LEE
IPC: H01L27/11582 , H01L27/11524 , H01L27/11556 , H01L27/11519 , H01L27/1157 , H01L27/11565
Abstract: A nonvolatile memory device including a mold structure including a plurality of gate electrodes on a substrate, the plurality of gate electrodes including first, second, and third string selection lines sequentially stacked on the substrate; a channel structure that penetrates the mold structure and intersects each of the gate electrodes; a first cutting region that cuts each of the gate electrodes; a second cutting region that is spaced apart from the first cutting region in a first direction and cuts each of the gate electrodes; a first cutting line that cuts the first string selection line between the first cutting region and the second cutting region; a second cutting line that cuts the second string selection line between the first cutting region and the second cutting region; and a third cutting line that cuts the third string selection line between the first cutting region and the second cutting region.
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公开(公告)号：US20220246643A1
公开(公告)日：2022-08-04
申请号：US17726899
申请日：2022-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Ho AHN , Sung-Min HWANG , Joon-Sung LIM , Bum Kyu KANG , Sang Don LEE
IPC: H01L27/11582 , H01L27/11524 , H01L27/11565 , H01L27/11519 , H01L27/1157 , H01L27/11556
Abstract: A nonvolatile memory device including a mold structure including a plurality of gate electrodes on a substrate, the plurality of gate electrodes including first, second, and third string selection lines sequentially stacked on the substrate; a channel structure that penetrates the mold structure and intersects each of the gate electrodes; a first cutting region that cuts each of the gate electrodes; a second cutting region that is spaced apart from the first cutting region in a first direction and cuts each of the gate electrodes; a first cutting line that cuts the first string selection line between the first cutting region and the second cutting region; a second cutting line that cuts the second string selection line between the first cutting region and the second cutting region; and a third cutting line that cuts the third string selection line between the first cutting region and the second cutting region.
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6.发明申请公开(公告)号：US20140231863A1
公开(公告)日：2014-08-21
申请号：US14184171
申请日：2014-02-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kee Won LEE , Jong Uk SEO , Suk Ho YOON , Keon Hun LEE , Sang Don LEE
CPC classification number: H01L33/007 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32
Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.
Abstract translation: 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。
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公开(公告)号：US20130313518A1
公开(公告)日：2013-11-28
申请号：US13902610
申请日：2013-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Uk SEO , Eun Deok SIM , Sang Don LEE , Hyun Kwon HONG
IPC: H01L33/24
Abstract: A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of AlxGayIn1-x-yP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlzGa1-zAs (0≦z≦1) and an active layer interposed between the first and second conductivity-type semiconductor layers, wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlvGa1-v)0.5In0.5P (0.7≦v≦1) or AlwIn1-wP (0≦w≦1) and having depressions and protrusions.
Abstract translation: 半导体发光器件包括由Al x Ga y In 1-x-y P（0≤x≤1,0≤y≤1,0@ x + y @ 1）或Al z Ga 1-zAs（0 @ z）形成的第一和第二导电型半导体层 其中介于第一和第二导电类型半导体层之间的有源层，其中第一和第二导电类型半导体层中的至少一个包括由（AlvGa1-v）0.5In0形成的低折射率表面层。 5P（0.7 @ v @ 1）或AlwIn1-wP（0 @ w @ 1）并具有凹陷和突起。
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