-
公开(公告)号：US20160111595A1
公开(公告)日：2016-04-21
申请号：US14731391
申请日：2015-06-04
发明人： Jong Hyun LEE , Min Hwan KIM , Eun Deok SIM , Ji Heon OH , Heon Ho LEE , Ho Chul LEE , Jae Sung HYUN
摘要： A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.
摘要翻译： 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。
-
公开(公告)号：US20210106701A1
公开(公告)日：2021-04-15
申请号：US16981432
申请日：2019-03-29
发明人： Dae Yoon CHI , Byoung Se LEE , So Young CHU , Hyeon Jin JEONG , Min Hwan KIM , Kyo Chul Lee , Yong Jin Lee
摘要： The present invention relates to a pharmaceutical composition for diagnosing and treating prostate cancer, capable of targeting PSMA, and a compound provided by one aspect of the present invention has a glutamine-urea-lysine compound to which a radioactive metal-coupled chelator is structurally coupled and to which an aryl group that can additionally bind to PSMA protein is coupled. Coupling between the glutamine-urea-lysine compound and the chelator includes a polar spacer so as to serve the role of reducing in vivo nonspecific coupling and exhibit an effect of being rapidly removed from vital organs, but not from prostate cancer. These characteristics lower the radiation exposure, which is caused by a therapeutic radioisotope-coupled compound, to normal tissue and organs, and thus reduce side effects. In addition, a compound that contains a phenyl group having a coupling force with albumin has an increased residence time in the blood, thereby becoming more accumulated in prostate cancer.
-
公开(公告)号：US20150017748A1
公开(公告)日：2015-01-15
申请号：US14502463
申请日：2014-09-30
发明人： Won Soo JI , Choo Ho KIM , Sung Hoon OH , Min Hwan KIM , Beom Seok SHIN
CPC分类号： H01L22/14 , G01R31/2601 , G01R31/2635 , H01L33/48 , H01L2933/0033 , H01L2933/005 , Y10T29/51
摘要： An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state of each of the LED packages in the LED package array by applying a voltage or a current to the LED package array heated by the heating unit; and a cutting unit cutting only an LED package determined to be a functional product or an LED package determined to be a defective product from the lead frame to remove the same according to the testing results of the testing unit.
摘要翻译： 一种用于制造发光二极管（LED）封装的装置，包括：加热单元，其将引线框架状态中的LED封装阵列加热，其中安装多个LED封装件以阵列设置在引线框架上; 测试单元，通过向由加热单元加热的LED封装阵列施加电压或电流来测试LED封装阵列中的每个LED封装的工作状态; 以及切割单元，根据测试单元的测试结果，仅将被确定为功能产品的LED封装或从引线框确定为缺陷产品的LED封装以将其去除。
-
公开(公告)号：US20180198019A1
公开(公告)日：2018-07-12
申请号：US15678462
申请日：2017-08-16
发明人： Jai Won JEAN , Min Ho KIM , Min Hwan KIM , Jang Mi KIM , Chul Min KIM , Jeong Wook LEE , Jae Deok JEONG , Yong Seok CHOI
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/12 , H01L33/325
摘要： A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.
-
5.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME, AND LIGHTING DEVICE COMPRISING THE SAME 有权半导体发光器件，包含该发光器件的发光器件封装以及包含该器件的照明器件公开(公告)号：US20160043279A1
公开(公告)日：2016-02-11
申请号：US14661950
申请日：2015-03-18
发明人： Jai Won JEAN , Min Hwan KIM , Eun Deok SIM , Jong Hyun LEE , Heon Ho LEE , Ho Chul LEE , Jae Sung HYUN
IPC分类号： H01L33/32 , H01L33/02 , H01L33/46 , H01L33/14 , H01L33/50 , H01L33/24 , H01L33/00 , H01L33/06
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/0025 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/24 , H01L33/46 , H01L33/502 , Y10S977/95
摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.
摘要翻译： 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。
-
-
-
-
搜索结果
5 条记录 (耗时 0.015 秒)
