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    TEST HANDLER AND SEMICONDUCTOR DEVICE EQUIPMENT INCLUDING SAME
    1.
    发明申请
    TEST HANDLER AND SEMICONDUCTOR DEVICE EQUIPMENT INCLUDING SAME 有权

    公开(公告)号：US20220026485A1

    公开(公告)日：2022-01-27

    申请号：US17211385

    申请日：2021-03-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yeong Seok KIM ,  Suk Byung CHAE ,  Dong Soo LEE ,  Sang Ho JANG

    IPC: G01R31/28

    Abstract: A test handler includes a pusher which includes a pusher end which comes into contact with a DUT (Device Under Test) to transfer heat, and a pusher body which conducts heat to the pusher end, the pusher end separating a test tray for fixing the DUT and the pusher body from each other; a porous match plate including a pusher arrangement region in which the pusher body is placed, and a plurality of holes placed adjacent to the pusher arrangement region; a heater placed on an upper surface of the porous match plate to control temperature of the pusher; and an airflow input port placed on the heater to provide the airflow to the plurality of holes, in which the airflow passes through the plurality of holes and passes through a separated space between the test tray and the pusher body.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190097048A1

    公开(公告)日：2019-03-28

    申请号：US15974775

    申请日：2018-05-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Yeol SONG ,  Su Young BAE ,  Dong Soo LEE ,  Hyung Suk JUNG ,  Sang Jin HYUN

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/423

    Abstract: A semiconductor device including a substrate; a first and second active region on the substrate; a first recess intersecting with the first active region; a second recess intersecting with the second active region; a gate spacer extending along sidewalls of the first and second recess; a first lower high-k dielectric film in the first recess and including a first high-k dielectric material in a first concentration and a second high-k dielectric material; a second lower high-k dielectric film in the second recess and including the first high-k dielectric material in a second concentration that is greater than the first concentration, and the second high-k dielectric material; a first metal-containing film on the first lower high-k dielectric film and including silicon in a third concentration; and a second metal-containing film on the second lower high-k dielectric film and including silicon in a fourth concentration that is smaller than the third concentration.

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