公开(公告)号：US20240154017A1

公开(公告)日：2024-05-09

申请号：US18378992

申请日：2023-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHWAN KIM ,  WANDON KIM ,  JUNKI PARK ,  HYUNBAE LEE ,  HYOSEOK CHOI

IPC: H01L29/45 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including a first region and a second region. a first gate structure on the first region of the substrate, a first source/drain layer on a portion of the substrate adjacent to the first gate structure. a second gate structure on the second region of the substrate. a second source/drain layer on a portion of the substrate adjacent to the second gate structure. and a first contact plug including a first metal silicide pattern on the first source/drain layer. The first metal silicide pattern includes a silicide of a first metal and a silicide of a second metal different from the first metal. The device further includes a first conductive pattern on the first metal silicide pattern, a second contact plug including a second metal silicide pattern on the second source/drain layer, and a second conductive pattern on the second metal silicide pattern. The second metal silicide pattern includes a silicide of the first and second metals. A first ratio of the first metal to the second metal included in the first metal silicide pattern is different from a second ratio of the first metal to the second metal included in the second metal silicide pattern.

公开(公告)号：US20230187185A1

公开(公告)日：2023-06-15

申请号：US17948943

申请日：2022-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUMIN PARK ,  SUNGHWAN KIM ,  HAKYOUNG KIM ,  DAEHYUN LEE ,  DONGYUN YEO ,  MINYOUNG HUR

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32082 ,  H01J2237/327

Abstract: A plasma battle includes a lower ring and an upper ring that extends upwardly from an edge of the lower ring. The lower ring includes a lower central hole on a center of the lower ring and vertically penetrating the lower ring and a lower slit outside the lower central hole and vertically penetrating the lower ring. The upper ring includes an upper central hole on a center of the upper ring and vertically penetrating the upper ring and an upper slit that penetrates the upper ring so as to connect an inner lateral surface of the upper ring to an outer lateral surface of the upper ring.