公开(公告)号：US20230086157A1

公开(公告)日：2023-03-23

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Youngdeok SEO ,  Hyuna KIM ,  Hyunkyo OH ,  Donghoo LIM

IPC: G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

公开(公告)号：US20250061937A1

公开(公告)日：2025-02-20

申请号：US18934502

申请日：2024-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Chang JEON ,  Woohyun KANG ,  Seungkyung RO ,  Sangkwon MOON ,  Heewon LEE

IPC: G11C11/408 ,  G06F3/06

Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

公开(公告)号：US20250068559A1

公开(公告)日：2025-02-27

申请号：US18590574

申请日：2024-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Jinyoung LEE ,  Jisoo KIM ,  Sangkwon MOON ,  Hyunkyo OH ,  Donghoo LIM ,  Jin gu JEONG

IPC: G06F12/02

Abstract: A storage device includes a non-volatile memory device configured to store fast cell information obtained from a threshold voltage distribution formed through a one-shot program for memory cells; and a storage controller configured to read the fast cell information from the non-volatile memory device during booting or initialization to perform mapping a fast cell area based on a fast cell management policy, wherein the fast cell information is acquired through the one-shot program performed in a test stage or a mass production evaluation stage, and is stored in the non-volatile memory device before a firmware of the storage controller is executed.

公开(公告)号：US20250060885A1

公开(公告)日：2025-02-20

申请号：US18421352

申请日：2024-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Garam KIM ,  Jisoo KIM ,  Sangkwon MOON ,  Hyunkyo HO ,  Jin Gu JEONG ,  Youngjun HWANG

IPC: G06F3/06

Abstract: A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.

公开(公告)号：US20230187002A1

公开(公告)日：2023-06-15

申请号：US17893476

申请日：2022-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuna KIM ,  Woohyun KANG ,  Youngdeok SEO ,  Hyunkyo OH ,  Donghoo LIM

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C16/3495 ,  G11C16/3404 ,  G11C16/26

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

公开(公告)号：US20220326884A1

公开(公告)日：2022-10-13

申请号：US17518770

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Hyuna KIM ,  Minkyu KIM ,  Donghoo LIM ,  Sanghyun CHOI

IPC: G06F3/06 ,  G06F13/28 ,  G11C16/04 ,  G11C16/26 ,  G11C16/14 ,  G06F11/10

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

公开(公告)号：US20220310168A1

公开(公告)日：2022-09-29

申请号：US17511738

申请日：2021-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Hyuna KIM ,  Minkyu KIM ,  Donghyub KANG

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/30 ,  G11C16/32 ,  G11C29/42 ,  G06N20/00

Abstract: A method of operating a storage controller that communicates with a non-volatile memory device includes performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on a first read voltage; updating a page count value of a DMA register, based on the first DMA read operation; determining whether data read by the first DMA read operation include an uncorrectable error; when it is determined that the data read by the first DMA read operation include the uncorrectable error, determining a second read voltage different from the first read voltage, based on the updated page count value of the DMA register, without an additional read operation on the data stored in the non-volatile memory device; and performing a second DMA read operation on the data stored in the non-volatile memory device, based on the second read voltage.