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公开(公告)号：US20220246876A1
公开(公告)日：2022-08-04
申请号：US17727940
申请日：2022-04-25
发明人： Jihyun MIN , Eun Joo JANG , Edward H. SARGENT , Hyo Sook JANG , Makhsud I. SAIDAMINOV , Sjoerd HOOGLAND , Ankit JAIN , Andrew JOHNSTON , Oleksandr VOZNYY
摘要： A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ). Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1
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公开(公告)号：US20190225883A1
公开(公告)日：2019-07-25
申请号：US16254676
申请日：2019-01-23
发明人： Jihyun MIN , Eun Joo JANG , Hyo Sook JANG , Ankit JAIN , Edward SARGENT , Oleksandr VOZNYY , Larissa LEVINA , Sjoerd HOOGLAND , Petar Todorovic , Makhsud SAIDAMINOV
摘要： A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3 Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.
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公开(公告)号：US20210040386A1
公开(公告)日：2021-02-11
申请号：US16986384
申请日：2020-08-06
发明人： Jihyun MIN , Eun Joo JANG , Edward H. SARGENT , Hyo Sook JANG , Makhsud I. SAIDAMINOV , Sjoerd HOOGLAND , Ankit JAIN , Andrew JOHNSTON , Oleksandr VOZNYY
摘要： A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ). Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1
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公开(公告)号：US20230257607A1
公开(公告)日：2023-08-17
申请号：US18169753
申请日：2023-02-15
发明人： Keigo FURUTA , Hiroko ENDO , Takao MOTOYAMA , Yukika YAMADA , Tomoyuki KIKUCHI , Eun Joo JANG , Hyo Sook JANG , Jun-Mo YOO , Tae Ho KIM , Yuho WON
IPC分类号： C09D11/36 , C09D11/38 , H10K50/115
CPC分类号： C09D11/36 , C09D11/38 , H10K50/115
摘要： A quantum dot ink composition including a plurality of quantum dots, and a mixed solvent including a Solvent a and a Solvent b, the ink composition having a surface tension of about 30 mN/m to about 40 mN/m, where Solvent a is a cycloalkane compound with at least one ring carbon having a linear C4 to C16 alkyl group, and Solvent b is an aromatic hydrocarbon compound having a linear C2 to C12 alkyl group. A quantum dot electroluminescent device including a light emitting layer formed from the quantum dot composition.
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公开(公告)号：US20230096181A1
公开(公告)日：2023-03-30
申请号：US17953533
申请日：2022-09-27
发明人： Yuho WON , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG , Seonmyeong CHOI
摘要： An electroluminescent device includes a first electrode and a second electrode spaced apart from each other, and a light emitting layer including semiconductor nanoparticles. The semiconductor nanoparticles do not contain cadmium, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, the semiconductor nanoparticles have a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, the first semiconductor nanocrystals include a first zinc chalcogenide containing sulfur, in the semiconductor nanoparticles, a mole ratio of sulfur to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 110:1, and the semiconductor nanoparticles are configured to emit light having a maximum emission peak wavelength of greater than or equal to about 440 nanometers (nm) and less than or equal to about 580 nm, and the semiconductor nanoparticles have a quantum yield of greater than or equal to about 40%.
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公开(公告)号：US20220325178A1
公开(公告)日：2022-10-13
申请号：US17705617
申请日：2022-03-28
发明人： Heejae LEE , Soonmin CHA , Tae Hyung KIM , Dae-Hee LEE , Eun Joo JANG , Hyo Sook JANG , Dae Young CHUNG , Moon Gyu HAN
摘要： A quantum dot device and an electronic device. The quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the second electrode and the light emitting layer and enhancing transport of first charge carriers from the second electrode to the light emitting layer, and a buffer layer disposed between the light emitting layer and the first charge auxiliary layer and enhancing extraction of second charge carriers from the light emitting layer.
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公开(公告)号：US20220288930A1
公开(公告)日：2022-09-15
申请号：US17394698
申请日：2021-08-05
发明人： Tae Ho KIM , Eun Joo JANG , Tae Hyung KIM , Hyo Sook JANG , You Jung CHUNG
摘要： An inkjet printhead includes a head body in which a first fine channel that is connected to an ink inlet and thus guides an inflow of ink, a second fine channel that is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle that is opened downward from the second fine channel are defined, and a micro heater that is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet.
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公开(公告)号：US20220209152A1
公开(公告)日：2022-06-30
申请号：US17563143
申请日：2021-12-28
发明人： Yong Seok HAN , Eun Joo JANG , Hyo Sook JANG , Oul CHO , Jihyun MIN , Yuho WON
摘要： A light-emitting device including a first electrically conducting layer, a second electrically conducting layer, and a light-emitting layer disposed between the first electrically conducting layer and the second electrically conducting layer, the light emitting layer including light emitting nanostructures, wherein the light emitting layer is configured to emit green light, the light-emitting layer do not include cadmium, lead, or a combination thereof, the light emitting nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, the zinc chalcogenide includes zinc, selenium, and sulfur, the light emitting nanostructures exhibit a zinc blende structure, and in a two dimensional image of the light emitting nanostructures obtained by an electron microscopy analysis, an average value of squareness of the light emitting nanostructures is greater than or equal to about 0.8.
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公开(公告)号：US20220056338A1
公开(公告)日：2022-02-24
申请号：US17407260
申请日：2021-08-20
发明人： Yong Wook KIM , Yong ju KWON , Sungjee KIM , Jihyun MIN , Yuho WON , Eun Joo JANG , Hyo Sook JANG , Eunjae LEE , Kyuhyun BANG , Anastasia AGNES , Jeongmin KIM
摘要： The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
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公开(公告)号：US20210296608A1
公开(公告)日：2021-09-23
申请号：US17199977
申请日：2021-03-12
发明人： Heejae LEE , Moon Gyu HAN , Won Sik YOON , Eun Joo JANG , Dae Young CHUNG , Tae Hyung KIM , Hyo Sook JANG
IPC分类号： H01L51/50
摘要： A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.
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